Page 1
Advanced Power MOSFET
SFH154
FEATURES
■ Avalanche Rugged Technology
■ Rugged Gate Oxide Technology
■ Lower Input Capacitance
■ Improved Gate Charge
■ Extended Safe Operating Area
o
■ 150
C Operating Temperature
■ Lower Leakage Current : 10 µA(Max.) @ V
■ Lower R
: 0.064 Ω (Typ.)
DS(ON)
Absolute Maximum Ratings
Characteristic Value UnitsSymbol
Drain-to-Source Voltage
Continuous Drain Current (T
Continuous Drain Current (T
=25oC)
C
=100oC)
C
Drain Current-Pulsed ①
Gate-to-Source Voltage
Single Pulsed Avalanche Energy ②
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Total Power Dissipation (TC=25oC)
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8＂ from case for 5-seconds
T
V
DSS
I
I
DM
V
E
I
AR
E
dv/dt
P
, T
J
T
D
GS
AS
AR
D
STG
L
DS
= 150V
①
①
③
BV
DSS
R
DS(on)
ID= 34 A
TO-3P
1
2
3
1.Gate 2. Drain 3. Source
150
34
21.6
136
±30
867
34
20.4
5.0
204
1.63
- 55 to +150
300
= 150 V
= 0.075 Ω
V
A
A
V
mJ
A
mJ
V/ns
W
o
W/
o
C
C
Thermal Resistance
R
θJC
R
θCS
R
θJA
Characteristic Max. UnitsSymbol Typ.
Junction-to-Case
Case-to-Sink
Junction-to-Ambient
--
0.24
--
0.61
--
40
o
C/W
1
Page 2
SFH154
N-CHANNEL
POWER MOSFET
Electrical Characteristics
CharacteristicSymbol
BV
ΔBV/ΔT
V
GS(th)
I
GSS
I
DSS
R
DS(on)
g
C
C
C
t
d(on)
t
d(off)
Q
Q
Q
Drain-Source Breakdown Voltage
DSS
Breakdown Voltage Temp. Coeff.
J
Gate Threshold Voltage
Gate-Source Leakage , Forward
Gate-Source Leakage , Reverse
Drain-to-Source Leakage Current
Static Drain-Source
On-State Resistance
Forward Transconductance
fs
Input Capacitance
iss
Output Capacitance
oss
Reverse Transfer Capacitance
rss
Turn-On Delay Time
t
Rise Time
r
Turn-Off Delay Time
t
Fall Time
f
Total Gate Charge
g
Gate-Source Charge
gs
Gate-Drain(＂Miller＂) Charge
gd
(TC=25
℃ unless otherwise specified)
Max. UnitsTyp.Min. Test Condition
V
150
--
2.0
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
0.11
--
--
--
--
--
--
20
2590
380
135
20
25
70
30
90
20
35
--
--
4.0
100
-100
10
100
0.075
--
3370
450
200
50
60
145
70
110
--
--
V/
V
℃
V
nA
μA
Ω
pF
ns
nC
=0V,ID=250μA
GS
I
=250μA See Fig 7
D
=5V,ID=250μA
V
DS
V
=20V
GS
V
=-20V
GS
VDS=150V
V
=120V,TC=125
DS
=10V,ID=17A
V
GS
Ω
VDS=40V,ID=17A
VGS=0V,VDS=25V,f =1MHz
VDD=75V,ID=34A,
R
=6.2Ω
G
VDS=120V,VGS=10V,
I
=34A
D
See Fig 6 & Fig 12
℃
See Fig 5
See Fig 13
④
④
④⑤
④⑤
Source-Drain Diode Ratings and Characteristics
CharacteristicSymbol Max. UnitsTyp.Min. Test Condition
I
I
SM
V
t
Q
Notes ;
① Repetitive Rating : Pulse Wi dth Lim i ted by Maximum Junction Temperature
② L=1.0mH, I
③ I
④ Pulse Test : Pulse Width = 250μs, Duty Cycl e ≤ 2%
⑤ Essentially Independent of Operating Temperature
Continuous Source Current
S
Pulsed-Source Current
Diode Forward Voltage
SD
Reverse Recovery Time
rr
Reverse Recovery Charge
rr
=34A, VDD=50V, RG=27Ω, Starting TJ =25℃
≤34A, di/dt≤400A/μs, VDD≤BV
SD
AS
①
④
, Starting TJ =25℃
DSS
--
--
--
--
-203
--
1.52
--
136
1.5
--
--
ns
μ
A
V
C
34
--
Integral reverse pn-diode
in the MOSFET
T
=25℃,IS=34A,VGS=0V
J
T
=25℃,IF=34A
J
di
/dt=100A/μs
F
④
2
Page 3
N-CHANNEL
POWER MOSFET
Fig 1. Output Characteristics Fig 2. Transfer Characteristics
V
GS
To p : 15 V
1 0 V
2
10
8 .0 V
7 .0 V
6 .0 V
5 .5 V
5 .0 V
Bo ttom : 4 .5 V
1
10
, Drain Current [ A]
D
I
0
10
-1
10
VDS , Drain-Source Vol tage [V]
@ Notes :
1. 250 µs Pulse Test
2. TC = 25 oC
0
10
SFH154
2
10
1
10
150 oC
0
10
, Drain Current [A]
D
I
1
10
25 oC
-1
10
0246810
- 55 oC
VGS , Gate-Source Voltage [V]
@ Notes :
1. V
2. V
3. 250
= 0 V
GS
= 40 V
DS
s Pulse Test
µ
0.12
0.10
]
Ω
0.08
VGS = 10 V
, [
DS(on)
0.06
R
0.04
Drain-Source On-Res istance
0.02
0 30 60 90 120 150
VGS = 20 V
@ Note : TJ = 25 oC
ID , Drain Current [ A]
4000
C
iss
3000
2000
C
1000
oss
C
rss
0
0
10
Capacitance [pF]
C
= Cgs+ Cgd ( Cds= shorted )
iss
= Cds+ C
C
oss
gd
C
= C
rss
gd
@ Notes :
1. V
2. f = 1 MHz
1
10
VDS , Drain-Source Vol tage [V]
GS
= 0 V
Fig 4. Source-Drain Diode Forward VoltageFig 3. On-Resistance vs. Drain Current
2
10
1
10
0
10
150 oC
, Reverse D rain Current [A]
DR
I
-1
10
25 oC
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
@ Notes :
1. V
2. 250
= 0 V
GS
s Pulse Test
µ
VSD , Source-Drain Voltage [V]
Fig 6. Gate Charge vs. Gate-Source VoltageFig 5. Capacitance vs. Drain-Source Voltage
15
VDS = 30 V
10
VDS = 75 V
VDS = 120 V
5
, Gate-Sour ce Voltage [V]
GS
V
0
020406080100
@ Notes : ID = 34 A
QG , Total Gate Charge [nC]
3
Page 4
SFH154
Fig 7. Breakdown Voltage vs. Temperature Fig 8. On-Resistance vs. Temperature
1.2
2.0
POWER MOSFET
N-CHANNEL
1.1
1.0
, (Normalized)
DSS
BV
0.9
Drain-Source Breakdown Voltage
0.8
-75 -50 -25 0 25 50 75 100 125 150 175
@ Notes :
1. V
2. I
TJ , Junction Temperature [oC]
3
10
2
10
Operation in This Area
is Limited by R
DS(on)
0.1 ms
1 ms
1
10
10 ms
DC
@ Notes :
= 25 oC
1. T
, Drain Current [A ]
D
0
10
I
-1
10
0
10
C
2. T
= 150 oC
J
3. Single Pulse
1
10
10
VDS , Drain-Source Voltage [V]
GS
D
2
= 0 V
= 250 µA
1.6
1.2
, (Normalized)
DS(on)
R
0.8
Drain-Source On-Resistance
-75 -50 -25 0 25 50 75 100 125 150 175
@ Notes :
1. Vgs = 10V
2. Id = 17A
TJ , Junction Temperature [oC]
Fig 10. Max. Drain Current vs. Case TemperatureFig 9. Max. Safe Operating Area
40
30
20
, Drain Current [A]
D
10
I
0
25 50 75 100 125 150
Tc , Case Temperature [oC]
(t) , Thermal Response
Z
Fig 11. Thermal Response
0
10
D=0.5
0.2
-1
10
0.1
0.05
0.02
JC
0.01
-2
θ
10
-5
10
single pulse
-4
10
10
@ Notes :
1. Z
θ
2. Duty Factor, D = t1/t
3. TJM-TC = PDM*Z
-3
-2
10
(t) = 0.61 oC/W Max.
JC
(t)
JC
θ
P
DM
t
1
t
2
-1
10
2
0
10
1
10
t1 , Square Wave Pulse Duration [sec]
4
Page 5
N-CHANNEL
POWER MOSFET
SFH154
Fig 12. Gate Charge Test Circuit & Waveform
12V
10V
* Current Regulator
200nF
3mA
Current Sampling (IG)
V
V
in
R
G
50KΩ
V
out
”
Same Type
V
GS
as DUT
300nF
V
GS
10V
DS
DUT
R
1
Resistor
Fig 13. Resistive Switching Test Circuit & Waveforms
DUT
R
2
Current Sampling (ID)
Resistor
R
L
V
DD
( 0.5 rated V
V
out
90%
)
DS
10%
V
in
Q
gs
t
d(on)tr
Q
g
Q
gd
Charge
t
d(off)
t
t
on
f
t
off
Vary tpto obtain
required peak I
10V
Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms
BV
L
DUT
L
BV
I
D
C
V
DD
DSS
I
AS
V
DD
V
DS
D
R
G
t
p
E
=LL I
AS
1
---2
AS
ID (t)
t
2
p
DSS
-------------------BV
DSS
-- V
DD
Time
V
(t)
DS
5
Page 6
SFH154
N-CHANNEL
POWER MOSFET
Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms
V
GS
V
GS
( Driver )
DUT
+
V
DS
--
I
S
L
V
GS
Driver
R
G
D =
Same Type
as DUT
• dv/dt controlled by ＂R
controlled by Duty Factor ＂D＂
•I
S
Gate P ulse Wid th
-------------------------Gate Pulse Period
V
DD
＂
G
10V
I
S
( DUT )
V
DS
( DUT )
IFM, Body Diode Forward Current
I
RM
Body Diode Reverse Current
Body Diode Recovery dv/dt
V
f
Body Diode
Forward Voltage Drop
di/dt
V
DD
6
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