Page 1
SEMiX703GAR126HDs
Absolute Maximum Ratings
Symbol Conditions Values Unit
IGBT
V
CES
I
C
I
Cnom
I
CRM
V
GES
SEMiX® 3s
Trench IGBT Modules
SEMiX703GAR126HDs
Features
• Homogeneous Si
• Trench = Trenchgate technology
•V
• High short circuit capability
• UL recognised file no. E63532
Typical Applications*
•AC inverter drives
•UPS
• Electronic Welding
Remarks
• Case temperatur limited to TC=125°C
•Not for new design
with positive temperature
CE(sat)
coefficient
max.
t
psc
T
j
Inverse diode
I
F
I
Fnom
I
FRM
I
FSM
T
j
Freewheeling diode
I
F
I
Fnom
I
FRM
I
FSM
T
j
Module
I
t(RMS)
T
stg
V
isol
Tj=25°C
Tj= 150 °C
T
=25°C
c
T
=80°C
c
1200 V
642 A
449 A
450 A
I
CRM
= 2xI
Cnom
900 A
-20 ... 20 V
VCC= 600 V
V
GE
V
CES
≤ 20 V
≤ 1200 V
=125°C
T
j
10 µs
-40 ... 150 °C
Tj= 150 °C
=25°C
c
T
=80°C
c
561 A
384 A
T
450 A
I
= 2xI
FRM
Fnom
tp= 10 ms, sin 180°, Tj=25°C
900 A
2900 A
-40 ... 150 °C
Tj= 150 °C
=25°C
c
T
=80°C
c
533 A
367 A
T
450 A
I
= 2xI
FRM
Fnom
tp= 10 ms, sin 180°, Tj=25°C
900 A
2900 A
-40 ... 150 °C
T
terminal
=80°C
600 A
-40 ... 125 °C
AC sinus 50Hz, t = 1 min 4000 V
GAR
Characteristics
Symbol Conditions min. typ. max. Unit
IGBT
V
CE(sat)
V
CE0
r
CE
V
GE(th)
I
CES
C
ies
C
oes
C
res
Q
R
Gint
IC=450A
V
=15V
GE
chiplevel
chiplevel
VGE=15V
chiplevel
VGE=VCE, IC=18mA 5 5.8 6.5 V
VGE=0V
V
= 1200 V
CE
VCE=25V
V
=0V
GE
G
VGE= - 8 V...+ 15 V
Tj=25°C
T
=25°C
j
=125°C
T
j
T
=25°C
j
T
=125°C
j
T
=25°C
j
T
=125°C
j
T
=25°C
j
T
=125°C
j
f=1MHz
f=1MHz
f=1MHz
1.7 2.10 V
2.0 2.45 V
11.2V
0.9 1.1 V
1.6 2.0 m
2.4 3.0 m
5mA
mA
32.3 nF
1.69 nF
1.46 nF
3600 nC
1.67
© by SEMIKRON Rev. 2 – 03.07.2013 1
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SEMiX703GAR126HDs
Characteristics
Symbol Conditions min. typ. max. Unit
t
d(on)
t
r
E
on
t
d(off)
t
f
E
off
R
SEMiX® 3s
Trench IGBT Modules
SEMiX703GAR126HDs
Features
• Homogeneous Si
• Trench = Trenchgate technology
•V
• High short circuit capability
• UL recognised file no. E63532
Typical Applications*
•AC inverter drives
•UPS
• Electronic Welding
Remarks
• Case temperatur limited to TC=125°C
•Not for new design
with positive temperature
CE(sat)
coefficient
max.
th(j-c)
Inverse diode
V
= V
F
V
F0
r
F
I
RRM
Q
rr
E
rr
R
th(j-c)
Freewheeling diode
V
= V
F
V
F0
r
F
I
RRM
Q
rr
E
rr
R
th(j-c)
Module
L
CE
R
CC'+EE'
R
th(c-s)
M
s
M
t
w 300 g
Temperature Sensor
R
100
B
100/125
VCC= 600 V
I
=450A
C
V
=±15V
GE
R
=1.6
G on
R
=1.6
G off
=125°C
T
j
Tj=125°C
Tj=125°C
Tj=125°C
Tj=125°C
Tj=125°C
310 ns
60 ns
32 mJ
680 ns
135 ns
68 mJ
per IGBT 0.061 K/W
EC
IF= 450 A
V
=0V
GE
chiplevel
chiplevel
chiplevel
IF= 450 A
di/dt
=8500A/µs
off
V
=-15V
GE
V
= 600 V
CC
=25°C
T
j
=125°C
T
j
T
=25°C
j
T
=125°C
j
T
=25°C
j
T
=125°C
j
T
=125°C
j
Tj=125°C
Tj=125°C
1.6 1.80 V
1.6 1.8 V
0.9 1 1.1 V
0.7 0.8 0.9 V
1.1 1.3 1.6 m
1.6 1.8 2.0 m
580 A
130 µC
60 mJ
per diode 0.11 K/W
EC
IF= 450 A
V
=0V
GE
chiplevel
chiplevel
chiplevel
IF= 450 A
di/dt
=8500A/µs
off
V
=-15V
GE
V
= 600 V
CC
T
=25°C
j
=125°C
T
j
T
=25°C
j
T
=125°C
j
T
=25°C
j
T
=125°C
j
T
=125°C
j
Tj=125°C
Tj=125°C
1.7 1.91 V
1.7 1.9 V
0.9 1 1.1 V
0.7 0.8 0.9 V
1.3 1.5 1.8 m
1.8 2.1 2.3 m
580 A
130 µC
60 mJ
per diode 0.11 K/W
20 nH
res., terminal-chip
=25°C
C
T
=125°C
C
0.7 m
1m
T
per module 0.04 K/W
to heat sink (M5) 3 5 Nm
to terminals (M6)
2.5 5 Nm
Tc=100°C (R25=5 k) 493 ± 5%
R
(T)=R100
exp[B
100/125
(1/T-1/T
100
)]; T[K];
3550
±2%
Nm
K
GAR
2 Rev. 2 – 03.07.2013 © by SEMIKRON
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SEMiX703GAR126HDs
Fig. 1: Typ. output characteristic, inclusive R
Fig. 3: Typ. turn-on /-off energy = f (IC) Fig. 4: Typ. turn-on /-off energy = f (RG)
CC'+ EE'
Fig. 2: Rated current vs. temperature IC = f (TC)
Fig. 5: Typ. transfer characteristic Fig. 6: Typ. gate charge characteristic
© by SEMIKRON Rev. 2 – 03.07.2013 3
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SEMiX703GAR126HDs
Fig. 7: Typ. switching times vs. I
C
Fig. 8: Typ. switching times vs. gate resistor R
G
Fig. 9: Typ. transient thermal impedance Fig. 10: Typ. CAL diode forward charact., incl. R
CC'+ EE'
Fig. 11: Typ. CAL diode peak reverse recovery current Fig. 12: Typ. CAL diode recovery charge
4 Rev. 2 – 03.07.2013 © by SEMIKRON
Page 5
SEMiX703GAR126HDs
SEMiX 3s
spring configuration
This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX
* The specifications of our components may not be considered as an assurance of component characteristics. Components have to be tested
for the respective application. Adjustments may be necessary. The use of SEMIKRON products in life support appliances and systems is
subject to prior specification and written approval by SEMIKRON. We therefore strongly recommend prior consultation of our staff.
© by SEMIKRON Rev. 2 – 03.07.2013 5
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