Datasheet SEMiX453GB17E4Ip DataSheet (Semikron)

SEMiX453GB17E4Ip

SEMiX® 3p shunt

SEMiX453GB17E4Ip

Features

• Homogeneous Si

• Trench = Trenchgate technology

•V

• High short circuit capability

• Press-fit pins as auxiliary contacts

• Current sensing shunt resistor

• UL recognized, file no. E63532

with positive temperature

CE(sat)

coefficient

Absolute Maximum Ratings

Symbol Conditions Values Unit

IGBT

V

I

C

I

Cnom

I

CRM

V

CES

GES

Tj=25°C

Tj= 175 °C

I

= 3xI

CRM

Cnom

T

=25°C

c

T

=80°C

c

1700 V

731 A

555 A

450 A

1350 A

-20 ... 20 V

VCC= 1000 V
V

t

psc

T

j

GE

V

CES

≤ 15 V

≤ 1700 V

=150°C

T

j

10 µs

-40 ... 175 °C

Inverse diode

V

I

F

I

Fnom

I

FRM

I

FSM

T

RRM

j

Tj=25°C

T

=25°C

Tj= 175 °C

I

= 2xI

FRM

Fnom

c

T

=80°C

c

tp= 10 ms, sin 180°, Tj=25°C

1700 V

557 A

412 A

450 A

900 A

2565 A

-40 ... 175 °C

Module

I

t(RMS)

T

stg

V

isol

AC sinus 50Hz, t = 1 min 4000 V

210 A

-40 ... 125 °C

Typical Applications*

•AC inverter drives

•UPS

• Renewable energy systems

Remarks

• Product reliability results are valid for
T

=150°C

j

•V

between temperature sensor and

isol

power section is only 2500V

GB + shunt

Characteristics

Symbol Conditions min. typ. max. Unit

IGBT

V

CE(sat)

V

CE0

r

CE

V

GE(th)

I

CES

C

ies

C

oes

C

res

Q

R

Gint

t

d(on)

t

r

E

on

t

d(off)

t

f

E

off

R

th(j-c)

R

th(c-s)

R

th(c-s)

IC=450A
V

=15V

GE

chiplevel

chiplevel

VGE=15V
chiplevel

VGE=VCE, IC= 18 mA 5.2 5.8 6.4 V

VGE=0V
V

= 1700 V

CE

VCE=25V
V

=0V

GE

G

VGE= - 8 V...+ 15 V

Tj=25°C
VCC= 900 V

I

=450A

C

V

= +15/-15 V

GE

R

=2.7Ω

G on

R

=2.7Ω

G off

di/dt

= 4300 A/µs

on

di/dt

=2200A/µs

off

du/dt = 3200 V/µs
L

=21nH

s

per IGBT 0.06 K/W

per IGBT (λ

grease

per IGBT, pre-applied phase change
material

T

=25°C

j

=150°C

T

j

T

=25°C

j

T

=150°C

j

T

=25°C

j

=150°C

T

j

T

=25°C

j

f=1MHz

f=1MHz

f=1MHz

=150°C

T

j

Tj=150°C

Tj=150°C

Tj=150°C

Tj=150°C

Tj=150°C

=0.81 W/(m*K))

1.90 2.20 V

2.26 2.45 V

1.1 1.2 V

11.1V

1.78 2.2 mΩ

2.8 3 mΩ

5mA

mA

36 nF

1.50 nF

1.14 nF

3600 nC

1.67 Ω

270 ns

90 ns

153 mJ

815 ns

200 ns

150 mJ

0.029 K/W

0.02 K/W

© by SEMIKRON Rev. 6.0 – 24.06.2015 1

SEMiX453GB17E4Ip

SEMiX® 3p shunt

SEMiX453GB17E4Ip

Features

• Homogeneous Si

• Trench = Trenchgate technology

•V

• High short circuit capability

• Press-fit pins as auxiliary contacts

• Current sensing shunt resistor

• UL recognized, file no. E63532

Typical Applications*

•AC inverter drives

•UPS

• Renewable energy systems

Remarks

• Product reliability results are valid for

•V

with positive temperature

CE(sat)

coefficient

T

=150°C

j

between temperature sensor and

isol

power section is only 2500V

Characteristics

Symbol Conditions min. typ. max. Unit

Inverse diode

V

V

r

F

I

RRM

Q

E

R

R

R

= V

F

F0

rr

rr

th(j-c)

th(c-s)

th(c-s)

IF= 450 A

EC

V

=0V

GE

chiplevel

chiplevel

chiplevel

IF= 450 A
di/dt

=4850A/µs

off

V

=-15V

GE

V

= 900 V

CC

per diode 0.1 K/W

per diode (λ

grease

per diode, pre-applied phase change
material

T

=25°C

j

=150°C

T

j

=25°C

T

j

T

=150°C

j

T

=25°C

j

T

=150°C

j

T

=150°C

j

Tj=150°C

Tj=150°C

=0.81 W/(m*K))

1.98 2.37 V

2.11 2.52 V

1.16 1.32 1.56 V

1.08 1.22 V

1.2 1.5 1.8 mΩ

2.3 2.9 mΩ

350 A

130 µC

73 mJ

0.048 K/W

0.038 K/W

Module

L

CE

R

CC'+EE'

Rth

(c-s)1

T

res. terminal-chip,
shunt excluded

=25°C

C

T

=150°C

C

calculated without thermal coupling 0.009 K/W

20 nH

0.85 mΩ

1.2 mΩ

including thermal coupling,

Rth

(c-s)2

Ts underneath module (λ

grease

=0.81 W/

0.014 K/W

(m*K))

including thermal coupling,

Rth

(c-s)2

Ts underneath module, pre-applied

0.011 K/W

phase change material

M

s

M

t

to heat sink (M5) 3 6 Nm

to terminals (M6)

36Nm

Nm

w 350 g

Temperature Sensor

R

100

B

100/125

Tc=100°C (R25=5 kΩ) 493 ± 5% Ω

R

(T)=R100

exp[B

100/125

(1/T-1/T

100

)]; T[K];

3550

±2%

K

Characteristics

Symbol Conditions min. typ. max. Unit

Shunt

I

Shunt

R

Shunt

Tc= 100 °C, T
R

=4K/W

th

Shunt,max

Tolerance = ±1 % 0.40 mΩ

=170°C,

210 A

α 50 ppm/K

GB + shunt

2 Rev. 6.0 – 24.06.2015 © by SEMIKRON

SEMiX453GB17E4Ip

Fig. 1: Typ. output characteristic, inclusive R

Fig. 3: Typ. turn-on /-off energy = f (IC) Fig. 4: Typ. turn-on /-off energy = f (RG)

CC'+ EE'

Fig. 2: Rated current vs. temperature IC = f (TC)

Fig. 5: Typ. transfer characteristic Fig. 6: Typ. gate charge characteristic

© by SEMIKRON Rev. 6.0 – 24.06.2015 3

SEMiX453GB17E4Ip

Fig. 7: Typ. switching times vs. I

C

Fig. 8: Typ. switching times vs. gate resistor R

G

Fig. 9: Typ. transient thermal impedance Fig. 10: Typ. CAL diode forward charact., incl. R

CC'+ EE'

Fig. 11: Typ. CAL diode peak reverse recovery current Fig. 12: Typ. CAL diode recovery charge

4 Rev. 6.0 – 24.06.2015 © by SEMIKRON

SEMiX453GB17E4Ip

SEMiX 3p shunt

pinout

This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX

* The specifications of our components may not be considered as an assurance of component characteristics. Components have to be tested
for the respective application. Adjustments may be necessary. The use of SEMIKRON products in life support appliances and systems is
subject to prior specification and written approval by SEMIKRON. We therefore strongly recommend prior consultation of our staff.

© by SEMIKRON Rev. 6.0 – 24.06.2015 5