Page 1
SEMiX353GD126HDc
SEMiX® 33c
Trench IGBT Modules
SEMiX353GD126HDc
Features
• Homogeneous Si
• Trench = Trenchgate technology
•V
• High short circuit capability
• UL recognised file no. E63532
Typical Applications*
• AC inverter drives
•UPS
• Electronic Welding
Remarks
• Case temperatur limited to TC=125°C
• Not for new design
with positive temperature
CE(sat)
coefficient
max.
Absolute Maximum Ratings
Symbol Conditions Values Unit
IGBT
V
I
C
I
Cnom
I
CRM
V
CES
GES
Tj= 150 °C
I
= 2xI
CRM
Cnom
T
=25°C
c
T
=80°C
c
1200 V
364 A
256 A
225 A
450 A
-20 ... 20 V
VCC= 600 V
V
t
psc
T
j
GE
V
CES
≤ 20 V
≤ 1200 V
= 125 °C
T
j
10 µs
-40 ... 150 °C
Inverse diode
T
I
F
I
Fnom
I
FRM
I
FSM
T
Tj= 150 °C
I
= 2xI
FRM
Fnom
tp= 10 ms, sin 180°, Tj=25°C
j
=25°C
c
T
=80°C
c
329 A
228 A
225 A
450 A
1700 A
-40 ... 150 °C
Module
I
t(RMS)
T
stg
V
isol
AC sinus 50Hz, t = 1 min 4000 V
600 A
-40 ... 125 °C
Characteristics
Symbol Conditions min. typ. max. Unit
IGBT
V
CE(sat)
V
CE0
r
CE
V
GE(th)
I
CES
C
ies
C
oes
C
res
Q
R
Gint
t
d(on)
t
r
E
on
t
d(off)
t
f
E
off
R
th(j-c)
IC=225A
V
=15V
GE
chiplevel
VGE=15V
VGE=VCE, IC=9mA 5 5.8 6.5 V
VGE=0V
V
= 1200 V
CE
VCE=25V
V
=0V
GE
G
VGE=- 8 V...+ 15 V
Tj=25°C
VCC= 600 V
I
=225A
C
=2Ω
R
G on
R
=2Ω
G off
per IGBT 0.1 K/W
T
=25°C
j
= 125 °C
T
j
Tj=25°C
T
= 125 °C
j
T
=25°C
j
T
= 125 °C
j
T
=25°C
j
T
= 125 °C
j
f=1MHz
f=1MHz
f=1MHz
T
= 125 °C
j
Tj= 125 °C
Tj= 125 °C
Tj= 125 °C
Tj= 125 °C
Tj= 125 °C
1.7 2.1 V
22.45V
11.2V
0.9 1.1 V
3.1 4.0 mΩ
4.9 6.0 mΩ
0.1 0.3 mA
mA
16.0 nF
0.84 nF
0.73 nF
1800 nC
3.33 Ω
265 ns
55 ns
26.5 mJ
585 ns
120 ns
32.5 mJ
GD
© by SEMIKRON Rev. 0 – 16.04.2010 1
Page 2
SEMiX353GD126HDc
SEMiX® 33c
Trench IGBT Modules
SEMiX353GD126HDc
Features
• Homogeneous Si
• Trench = Trenchgate technology
•V
• High short circuit capability
• UL recognised file no. E63532
Typical Applications*
• AC inverter drives
•UPS
• Electronic Welding
with positive temperature
CE(sat)
coefficient
Characteristics
Symbol Conditions min. typ. max. Unit
Inverse diode
V
V
r
F
I
RRM
Q
E
R
= V
F
F0
rr
rr
th(j-c)
IF=225A
EC
V
=0V
GE
chip
IF=225A
di/dt
= 5600 A/µs
off
V
=-15V
GE
V
= 600 V
CC
per diode 0.17 K/W
T
=25°C
j
= 125 °C
T
j
Tj=25°C
T
= 125 °C
j
Tj=25°C
T
= 125 °C
j
T
= 125 °C
j
Tj= 125 °C
Tj= 125 °C
1.6 1.80 V
1.6 1.8 V
0.9 1 1.1 V
0.7 0.8 0.9 V
2.2 2.7 3.1 mΩ
3.1 3.6 4.0 mΩ
330 A
69 µC
29 mJ
Module
L
CE
R
CC'+EE'
R
th(c-s)
M
s
M
t
=25°C
T
res., terminal-chip
C
T
= 125 °C
C
per module 0.014 K/W
to heat sink (M5) 3 5 Nm
to terminals (M6)
2.5 5 Nm
20 nH
0.7 mΩ
1mΩ
Nm
w 900 g
Temperatur Sensor
R
100
B
100/125
Tc=100°C (R25=5 kΩ) 493 ± 5% Ω
R
T[K];
(T)=R100
exp[B
100/125
(1/T-1/T
100
)];
3550
±2%
K
Remarks
• Case temperatur limited to TC=125°C
max.
• Not for new design
GD
2 Rev. 0 – 16.04.2010 © by SEMIKRON
Page 3
SEMiX353GD126HDc
Fig. 1: Typ. output characteristic, inclusive R
Fig. 3: Typ. turn-on /-off energy = f (IC) Fig. 4: Typ. turn-on /-off energy = f (RG)
CC'+ EE'
Fig. 2: Rated current vs. temperature IC = f (TC)
Fig. 5: Typ. transfer characteristic Fig. 6: Typ. gate charge characteristic
© by SEMIKRON Rev. 0 – 16.04.2010 3
Page 4
SEMiX353GD126HDc
Fig. 7: Typ. switching times vs. I
C
Fig. 8: Typ. switching times vs. gate resistor R
G
Fig. 9: Typ. transient thermal impedance Fig. 10: Typ. CAL diode forward charact., incl. R
CC'+EE'
Fig. 11: Typ. CAL diode peak reverse recovery current Fig. 12: Typ. CAL diode recovery charge
4 Rev. 0 – 16.04.2010 © by SEMIKRON
Page 5
SEMiX353GD126HDc
SEMiX 33c
pinout
This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX
* The specifications of our components may not be considered as an assurance of component characteristics. Components have to be tested
for the respective application. Adjustments may be necessary. The use of SEMIKRON products in life support appliances and systems is
subject to prior specification and written approval by SEMIKRON. We therefore strongly recommend prior consultation of our personal.
© by SEMIKRON Rev. 0 – 16.04.2010 5
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