Page 1
TOP VIEW
Elektronische Bauelemente
RoHS Compliant Product
A suffix of “-C” specifies halogen and lead-free
DESCRIPTION
These miniature surface mount MOSFETs utilize a
high cell Density trench process to provide low R
and to assures minimal power loss and heat dissipation.
FEATURES
Low R
provides higher efficiency and extends
DS(on)
battery life.
Low thermal impedance copper leadframe DFN2X2_6L
saves board space.
Fast switching speed.
High performance trench technology.
APPLICATION
DC-DC converters and power management
in portable and battery-powered products such
as computers, printers, PCMCIA cards, cellular
and cordless telephones.
DS(on)
SDN520C
N-Ch: 4.5 A, 20 V, R
P-Ch: -4.5 A, -20 V, R
N & P-Channel Enhancement Mode MOSFET
DFN2x2-6L
REF.
A 2.00 BSC.
B 2.00 BSC. H
C 0.675
D
E
F 0.65BSC P 0.60 0.65 0.70
Millimeter
Typ.
Min.
0.25
0.81 0.86 0.91 L 0.25
Max. Min.
0.75
0.80 J 0 - 0.05
0.30 0.35 K 0.15 0.20 0.25
DS(ON)
DS(ON)
REF.
G
58 mΩ
Ω
ΩΩ
112 mΩΩΩΩ
Millimeter
Typ.
0.23 0.30 0.38
0.65BSC
0.30
Max.
0.35
ABSOLUTE MAXIMUM RATINGS(
Parameter Symbol
TA = 25°C unless otherwise specified
)
Ratings
N-Channel P-Channel
Drain-Source Voltage VDS 20 -20 V
Gate-Source Voltage VGS ±8 ±8 V
Continuous Drain Current 1
TA=25℃℃℃℃
TA=70℃℃℃℃ 4.5 -4.5
ID
4.5 -4.5
Pulsed Drain Current 2 IDM 8 -8 A
Continuous Source Current (Diode Conduction) 1 IS 4.5 -4.5 A
Power Dissipation 1
TA=25℃℃℃℃
TA=70℃℃℃℃ 5
PD
6.5
Operating Junction and Storage Temperature Range TJ, Tstg -55 ~ +150 ℃
Thermal Resistance Rating
Parameter
Maximum Junction to Ambient 1
Notes:
1. Surface Mounted on 1” x 1” FR4 Board.
2. Pulse width limited by maximum junction temperature.
Steady State
t ≦ 5 sec
Symbol Typ Max Unit
R
θJA
52 65
12.5 16
Unit
A
W
℃℃℃
℃℃℃℃
/ W
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
4-Jul-2011 Rev. A Page 1 of 2
Page 2
SDN520C
N-Ch: 4.5 A, 20 V, R
Elektronische Bauelemente
P-Ch: -4.5 A, -20 V, R
N & P-Channel Enhancement Mode MOSFET
DS(ON)
DS(ON)
58 mΩ
Ω
ΩΩ
112 mΩΩΩΩ
ELECTRICAL CHARACTERISTICS
Parameter Symbol Min. Typ. Max. Unit
Gate-Threshold Voltage
Gate-Body Leakage Current
Zero Gate Voltage Drain Current
On-State Drain Current 1
Drain-Source On-Resistance 1
Forward Transconductance 1
N-Ch
P-Ch -1 - - VDS=VGS, ID= -250uA
N-Ch
P-Ch - - -100 VDS= 0 , VGS= -8 V
N-Ch
P-Ch - - -1 VDS=-16V, VGS=0
N-Ch - - 10
P-Ch - - -10
N-Ch
P-Ch -5 - - V
N-Ch
P-Ch - - 112 VGS=-4.5V, ID= 1A
N-Ch - - 82 VGS=2.5V, ID= A
P-Ch - - 172 VGS=-2.5V, ID= -1A
N-Ch
P-Ch - 5 - VDS= -5V, ID= 11A
(TA = 25°C unless otherwise specified)
V
I
I
I
R
DS(ON)
GS(th)
GSS
DSS
D(on)
g
fs
1 - -
- - 100
- - 1
5 - -
- - 58
- 10 -
uA
uA
mΩ
Test Conditions
VDS=VGS, ID=250uA
V
VDS= 0 , VGS= 8 V
VDS=16 V, VGS=0
VDS=16V, VGS=0 , TJ=55℃
VDS= -16V, VGS=0 , TJ=55℃
V
5V, VGS=4.5 V
DS =
A
S
= -5V, VGS= -4.5 V
DS
VGS=4.5V, ID= 1A
VDS= 5V, ID= 1A
Diode Forward Voltage 1
N-Ch
VSD
P-Ch - -0.83
Total Gate Charge
N-Ch
Qg
P-Ch - 3.8 -
Gate-Source Charge
N-Ch
Qgs
P-Ch - 0.6 -
Gate-Drain Charge
N-Ch
Qgd
P-Ch - 1.5 N-Ch
Turn-on Delay Time
T
d(on)
P-Ch - 5 -
Rise Time
N-Ch
Tr
P-Ch - 15 -
Turn-off Delay Time
N-Ch
T
d(off)
P-Ch - 20 N-Ch
Fall Time
Tf
P-Ch - 20 -
Notes:
1. Pulse test: PW <= 300us duty cycle <= 2%.
2. Guaranteed by design, not subject to production testing.
- 0.80 -
Dynamic 2
- 7.5 -
- 0.6 -
- 1.0 -
- 5 -
- 12 -
- 13 -
- 7 -
IS= 1.05A, VGS= 0
S
- IS= -1.05A, VGS= 0
N-Channel
VDS=15V, VGS= 4.5V,
ID= 2.7A
nC
P-Channel
VDS= -15V, VGS= -4.5V,
ID= -3.1A
N-Channel
VDD= 15V, R
GEN
= 15Ω,
VGS= 4.5V, ID= 1A
nS
P-Channel
VDD= -15V, R
GEN
= 15Ω
VGS= -4.5V, ID= -1A
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
4-Jul-2011 Rev. A Page 2 of 2
Loading...