Datasheet SDM9926 Datasheet (SamHop Microelectronics)

S DM9926

S amHop Microelec tronics C orp.

Augus t , 2002

Dual N-C hannel E nhancement Mode Field E ffect T ransis tor

PR ODUC T S UMMAR Y

VDS S

20V

ID

6A

R DS (O N) ( m

30 @ VGS = 4.5V

32 @ VGS = 4.0V
40 @ VGS = 2.7V

S O-8

1

W

) Max

ABS OLUT E MAX IMUM R ATINGS (TA=25 C unless otherwis e noted)

F E ATUR E S

S uper high dense cell design for low R

R ugged and reliable.

S urface Mount P ackage.

D1 D1 D2 D2

8 7 6 5

1 2 3 4

S 1 G 1 S 2 G 2

DS (O N

).

P arameter

Drain-S ource Voltage

G ate-S ource Voltage

Drain C urrent-C ontinuous @ TJ=125 C

-P uls ed

Drain-S ource Diode F orward C urrent

Maximum P ower Dis s ipation

a

b

(300us Puls e Width)

a

a

Opera ting J unction a nd S torage
Temperature R ange

THE R MAL C HAR AC T E R IS T IC S

Thermal R es is tance, J unction-to-Ambient

S ymbol

V

DS

V

G S

I

D

I

DM

I

S

P

D

TJ, T

S TG

a

R

J A

Limit Unit

20

12

6.0

35

1.7

2

-55 to 150

62.5

V

V

A

A

A

W

C

C

/W

1

S DM9926

E LE C T R IC AL C HAR AC TE R IS T IC S (T A 25 C unles s otherwis e noted)

P arameter

S ymbol

=

C ondition

Min

Typ

C

OF F C HAR AC TE R IS TICS

V

G S

Drain-S ource Breakdown Voltage

Zero G ate Voltage Drain C urrent

G ate-B ody Leakage

ON C HAR AC TE R IS TIC S

b

G ate Threshold Voltage

Drain-S ource On-S tate R es istance

On-S tate Drain C urrent

DYNAMIC C HAR AC TE R IS TIC S

0V, ID 250uA

B V

DS S

I

DS S

I

G S S

V

G S (th)

R

DS (ON)

I

D(ON)

g

F S

c

VDS 20V, V

V

G S

V

DS VG S

V

G S

V

G S

V

G S

V

DS

V

DS

=

=

= =

=

=

G S

8V,V

DS

=

, ID = 250uA

=

4.5V, I

D

=

4.0V, I

D

=

=

= 5V, V

= =

2.7V, I

10V, I

D

G S

D

=

0V

0V

=

6.0A

6.0A

5.2A

= 4.5V

6.0A

20

20

1.1
28

29
36

17

Max

1

100

30
32

40

Unit

V

uA

nA

V

m ohm

A

SF orward Trans conductance

Input C apacitance

Output C apacitance

R evers e Trans fer C apacitance

S WIT C HING C HAR AC T E R IS TICS

Turn-O n Delay Time

R ise Time

Turn-O ff Delay Time

F a ll Time

Total G ate C harge

G ate-S ource C harge

G ate-Drain C harge

C

IS S

V

DS

=8V, V

G S

= 0V

C

OS S

C

R S S

c

t

D(ON)

t

r

t

D(OFF)

t

f

Q

g

f =1.0MH

VDD = 10V,
ID = 1A,
V

G E N

= 4.5V,
RL = 10
R

GE N

ohm

= 6

Z

ohm

710

300

80

10

15 30

26

20 40

12

P

P

P

20 ns

ns

ns

50

ns

nC

15

F

F

F

VDS =10V, ID = 6A,

Q

Q

gs

gd

2

V

G S

=4.5V

4

2

nC

nC

S DM9926

E LE C T R IC AL C HAR AC TE R IS T IC S (TA=25 C unles s otherwis e noted)

P a rameter

S ymbol

C ondition

Min

Typ

C

Max

Unit

5

DR AIN-S OUR C E DIODE C HAR AC T E R IS TIC S

Diode F orwa rd Volta ge

V

S D

b

V

G S

= 0V, Is =1.7A

0.72

1.2

V

Notes

a.S urface Mounted on F R 4 B oard, t 10s ec.
b.Puls e Test:P uls e W idth 300us , Duty C ycle 2%.
c.G uaranteed by design, not subject to production tes ting.

25

VGS =4.5,3. 5,2.5V

20

15

10

5

ID, Drain Current(A)

0

0 1 2 3 4 5 6

VDS , Drain-to-S ource Voltage (V)

VGS =1.5V

F igure 1. Output C haracteris tics

25

20

15

10

T j=12 5 C

5

ID, Dra in C urrent ( A)

0

0. 0 0. 5 1 1.5 2 2.5 3

VGS , G ate-to-S ource Volta ge (V )

25 C

F igure 2. Trans fer C hara cteristics

-55 C

300 0

250 0

200 0

150 0

100 0

C , C apa cita nce (pF )

500

0

0 2 4 6 8 10 12

VDS , Drain-to S ource Voltage ( V)

F igure 3. Capa citance

C iss

C oss

C rss

0. 06
VGS =4.5V

0. 05

0. 04

0. 03

0. 02

On-R esistanc e(Ohms)

0. 01

R DS (O N),

0. 00

0 5 10 15 20

ID, Dra in C urrent(A)

T j=12 5 C

25 C

-55 C

F igure 4. On-R esistance Va riation with

Drain C urrent and Temperature

3

S DM9926

1.09

VDS=V

1.06

1.03

1.00

0.97

Vth, N ormalized

0.94

0.91

G ate-S ource T hreshold Voltage

-50 -25 0 25 50 75 1 00 125 150

Tj, Junction T emperature ( C )

G S

ID=250uA

F igure 5. Gate T hreshold V ariation

with Temperature

36

30

24

18

12

6

gFS , T ransconductance (S )

0

0 3 6 9 12 15

VDS=10V

1.15

1.10

1.05

1.00

0.95

0.90

B VDS S, Normalized

0.85

Dra in-S ource B rea kdown V oltage

ID=250uA

-50 -25 0 25 50 75 100 125 150

Tj, Junction T emperature ( C )

F igure 6. Brea kdown Voltage V ariation

with Temperature

20

10

1

Is , S ource-drain current ( A)

0

0.4 0.6 0.8 1.0 1.2 1.4

TJ=25 C

5

IDS , Drain-S ource C urrent (A)

F igure 7. Trans conductance V ariation

with Dra in Current

5

VDS=10V

4

ID=6A

3

2

1

VGS , G ate to S ource V oltage (V )

0

0 2 4 6 8 10 12 14

Qg, Total G ate C harge (nC)

16

F igure 9. Gate C harge

VS D, Body Diode F orward Voltage (V)

F igure 8. Body Diode F orward V oltage

Variation with S ource C urrent

50

10

(O N) L imit

DS

R

1

1

V

G S

0.1

ID, Dra in C urrent (A )

0.03

=4.5V

S ingle P ulse

Tc=25 C

0.1 1 10 20 50

VDS , Drain-S ource Voltage ( V)

10ms

100 ms

1s

DC

F igure 10. Ma ximum S afe
Operating Area

4

S DM9926

DD

V

on

t

d(off)

t

r

d(on)

R

5

V

G S

IN

V

G EN

R

G

L

D

OU T

V

S

t

OU T

V

IN

V

10%

t

90%

10% 10%

INVE R T E D

50% 50%

P ULS E W IDT H

90%

t

off

f

t

90%

F igure 11. S witching T est Circuit

2

1

Duty C yc le=0.5

0. 2

0. 1

0. 1

0. 05

0. 01

0. 02

S ingle P ulse

-4

10

-3

10

r(t), Norma lized E ffective

T rans ient Thermal Impedance

F igure 13. Normalized Therma l Trans ient Impedance C urve

F igure 12. S witching Waveforms

-2

10

S quare W ave P ulse Dura tion (s ec)

-1

10

DM

P

1

t

2

t

1. R thJA ( t) =r (t) * R JA

th

2. R J A=S ee Data shee t

3. TJ M-T A = PDM* R J A ( t)

4. Duty C ycle , D=t1/t2

1 10 100

th

th

5