Datasheet SDM9433 Datasheet (SamHop Microelectronics)

S DM9433

S amHop Microelectronics C orp.

P -C hannel E nhancement Mode MOS F E T

PR ODUC T S UMMAR Y

VDS S

-20V

ID

-5. 4A

R DS (O N) ( m

45 @ VG S = -4.5V

70 @ VG S = -2.7V

S O-8

1

W

) MAX

AB S OLUT E MAX IMUM R ATING S (TA=25 C unles s otherwise noted)

F E AT U R E S

S uper high dens e cell des ign for low R

R ugged and reliable.

S urface Mount P ackage.

D D D D

8 7 6 5

1 2 3 4

S S S G

March , 2003

DS (O N

).

P arameter

Drain-S ource Voltage

G ate-S ource Voltage

Drain C urrent-Continuous @ TJ=125 C

-P ulsed

Drain-S ource Diode F orward C urrent

Maximum P ower Dis sipation

a

b

a

a

Operating J unction and S torage
Tempera ture R ange

THE R MAL C HAR AC TE R IS TIC S

Thermal R esis tance, J unction-to-Ambient

S ymbol

V

DS

V

G S

I

D

I

DM

I

S

P

D

TJ, T

S TG

a

R

J A

Limit Unit

20

12

5.4

20

2.6

2.5

-55 to 150

50

V

V

A

A

A

W

C

C

/W

1

S DM9433

E LE C T R IC AL C HAR AC TE R IS T IC S (T A 25 C unles s otherwis e noted)

P arameter

5

OF F C HAR AC TE R IS TIC S

Drain-S ource B reakdown Voltage

Zero G ate Voltage Drain C urrent

G ate-B ody L eakage

ON C HAR AC T E R IS TIC S

G ate T hres hold Voltage

Drain-S ource On-S tate R es is tance

On-S tate Drain C urrent

b

S ymbol

c

B V

I

I

V

G S (th)

R

DS (ON)

I

D(ON)

g

DS S

DS S

G S S

F S

=

C ondition

V

G S

0V, ID -250uA

=

VDS -16V, V

= =

V

G S

12V, VDS 0V

=

V

DS VG S

=

=

V

G S

-4.5V, I

V

G S

-2.7V, I

=

V

DS

= -5V, V

= =

V

DS

-15V, I

=

G S

0V

=

, ID = -250uA

=

D

-5.1A

D

-2.0A

=

G S

= -4.5V

D

- 5.3A

Min

-20

-0.7

-20

Typ

13

C

Max

-1

100

45

70

Unit

V

uA

nA

V

m-ohm

m-ohm

A

SF orward Transconductance

DY NAMIC C HAR AC TE R IS TIC S

Input C apacitance

Output C apacitance

R everse Trans fer C apacitance

S WITC HING C HAR AC TE R IS TIC S

Turn-On Delay Time

R ise Time

Turn-Off Delay T ime

F all T ime

Total G ate C harge

G ate-S ource C harge

G ate-Drain C harge

c

C

IS S

C

OS S

C

R S S

t

D(ON)

t

r

t

D(OF F)

t

f

Q

Q

gs

Q

gd

P

1190

V

DS

=-10V, V

f =1.0MH

G S

= 0V

Z

710

260

40 ns

VD = -10V,
ID = -1A,
V

G E N

= -4.5V,

R

G E N

= 6 -ohm

20

18 70

50

120

29 140

g

20

25

F

P

F

P

F

ns

ns

ns

nC

VDS =-10V, ID = -1A,

nC

nC

2

V

G S

=-4.5V

4

4.3

S DM9433

E LE C T R IC AL C HAR AC TE R IS TIC S (TA=25 C unles s otherwis e noted)

P arameter

S ymbol

DR AIN-S O UR C E DIODE C HAR AC TE R IS T IC S

C ondition

b

Min

Typ

C

Max

Unit

5

Diode F orward Voltage

V

S D

Notes
a.S urface Mounted on F R 4 B oard, t <=10s ec.

b.P ulse Tes t:P ulse Width<=300us , Duty C ycle<= 2%.
c.G uaranteed by des ign, not s ubject to production tes ting.

25

20

15

10

5

-ID , Dra in C urrent (A)

0

0 0. 5 1. 0 1. 5 2.0 2. 5 3 .0

-V DS , D rain-to-S ource Voltage (V )

F igure 1. Output C haracteris tics

300 0

250 0

-VGS=10, 9,8, 7,6,5, 4,3 V

-VGS=

2V

V

G S

= 0V, Is =-5.3A

20

16

12

8

4

-ID , Dra in C urrent (A)

0

0 0 .5 1 1. 5 2 2. 5 3

F igure 2. Trans fer C ha ra cteris tics

1. 6

VGS=-4. 5V

I

D

1. 4

-0.89

-55 C
25 C

T j=125 C

-V GS , Ga te-to-S ource Voltage ( V )

=-5. 1A

-1.2

V

C , C apa citance (pF )

200 0

150 0

100 0

500

0

0

5 10

-V DS , D rain-to S ource Voltage ( V )

F igure 3. C apacitance

C iss

C oss

C rss

15 20

1. 2

1. 0

0. 8

On-R es istance(Ohms)

(N ormalized)

0. 6

R DS (O N),

0. 4

-50 0 50 100 125

-25

Tj, J unction Temperature ( C )

25

75

F igure 4. On-R esistance Va ria tion with

Tempera ture

3

T j( C)

S DM9433

1.3
VDS=V

1.2

1.1

1.0

5

0.9

0.8

-V th, Normaliz ed

0.7

G ate-S ource T hreshold V oltage

0.6

-50 -25 0 25 50 75 10 0 125

Tj, J unction Temperature ( C )

G S

ID=-250uA

F igure 5. G ate T hres hold V ariation

with Tempera ture

25

20

15

10

1.15

1.10

1.05

1.00

0.95

0.90

-B VDS S , Normaliz ed

0.85

Dra in-S ource Brea kdown V oltage

-50 -25 0 2 5 50 7 5 100 125

Tj, J unction Temperature ( C )

ID=-250uA

F igure 6. B reakdown V oltage V aria tion

with Tempera ture

20. 0

V

G S

=0V

10. 0

5

gFS , T rans conductanc e (S )

0

0 5 10 15 20

-ID S, Dra in-S ource C urrent (A )

VDS=-15V

F igure 7. T ra ns conductance V ariation

with Dra in C urrent

5

VDS=-10V
ID=-1A

4

3

2

1

-V G S , G ate to S ource V oltage (V )

0

0 3 6 9 12 15 18 21

Qg, T otal G ate C harge ( nC )

F igure 9. G ate C harge

-Is , S ource-dra in curre nt (A)

1.0

0.4 0 .6 0.8 1 .0 1.2 1.4

-V S D, B ody Diode F orwa rd Voltage (V )

F igure 8. B ody Diode F orwa rd V oltage

Variation with S ource C urrent

80

10

1

0.1

-ID , D rain C urrent (A)

0.03

0.1 1 10 20 50

t

imi

L

N)

(O

DS

R

DC

V

G S

=-10V

S ingle P ulse

TA=25 C

-V DS , D rain-S ource V oltage ( V )

100 m

1

10m

s

s

s

F igure 10. Maximum S afe
Operating Area

3

S DM9433

DD

-V

on

t

d(off)

t

r

d(on)

R

IN

V

V

G S

G EN

R

G

L

D

OU T

V

S

t

OU T

V

IN

V

10%

t

90%

10% 10%

50% 50%

INVE R TE D

P ULS E W IDT H

90%

t

off

f

t

90%

F igure 11. S witching T es t C ircuit

2

1

Duty C yc le=0.5

0. 2

0. 1

0. 1

0. 05

0. 01

0. 02

S ingle P ulse

-4

10

-3

10

r(t), Normaliz ed Effective

T rans ient Therma l Impeda nce

F igure 13. Norma lized T hermal Trans ient Impedance C urve

F igure 12. S witching W aveforms

-2

10

S quare W ave P ulse Dura tion (s ec)

-1

10

DM

P

1

t

2

t

1. R thJA ( t)=r (t) * R thJA

2. R thJA=S ee Datas heet

3. TJ M-T A = PDM* R thJA (t)

4. Duty C ycle , D=t1/t2

1 10 100

5