Datasheet SDM9410 Datasheet (SamHop Microelectronics)

S DM9410

S amHop Microelectronics C orp.

N-C hannel E nhancement Mode Field E ffect Transistor

PR ODUC T SUMMAR Y

VDS S

30V

ID

R DS (O N) ( m

7A

S O-8

W

) MAX

30 @ VG S = 10V

50 @ VG S = 4.5V

1

ABS OLUTE MAX IMUM R ATINGS (TA=25 C unless otherwise noted)

F E ATUR E S

S uper high dense cell des ign for low R

R ugged and relia ble.

S urface Mount P ackage.

P R E LIMINAR Y

DS (O N

).

P arameter

Drain-S ource Voltage

G ate-S ource Voltage

Drain C urrent-Continuous @ TJ=125 C

-P ulsed

Drain-S ource Diode F orward C urrent

Maximum P ower Dissipa tion

a

b

(300ms P uls e Width)

a

a

Operating J unction and S torage
Temperature R ange

THE R MAL C HAR AC TE R IS TICS

Thermal R esistance, J unction-to-Ambient

S ymbol

V

DS

V

G S

I

D

I

DM

I

S

P

D

TJ, T

S TG

a

R

J A

Limit Unit

30

20

7

28

2.8

2.5

-55 to 150

50

V

V

A

A

A

W

C

C

/W

1

S DM9410

E LE C T R IC AL C HAR AC T E R IS TIC S (T A 25 C unles s otherwis e noted)

P arameter

S ymbol

=

C ondition

Min

Typ

OF F C HAR AC TE R IS TIC S

Drain-S ource Breakdown Voltage

Zero G ate Voltage Drain Current

G ate-Body Leakage

ON C HAR ACT E R IS TIC S

b

G ate Threshold Voltage

Drain-S ource On-S tate R es is tance

On-S tate Drain C urrent

0V, ID 250uA

B V

DS S

I

DS S

I

G S S

V

G S (th)

R

DS (ON)

I

D(ON)

g

F S

c

VDS 24V, V

V

G S

V

DS VG S

V

G S

V

G S

V

DS

V

DS

=

=

= =

=

=

=

=

= 5V, V

= =

G S

20V, VDS 0V

, ID = 250uA

=

10V, I

D

4.5V,I

D

=

G S

5V, I

D

0V

=

7A

3.5A

= 10V

7A

30

1

30

1.8

12

V

G S

DYNAMIC C HAR AC TE R IS TIC S

C

Max

1

100

3

30

50

Unit

V

uA

nA

V

m ohm

m ohm

A

SF orward Transconducta nce

Input C apacitance

Output C apacitance

R evers e Trans fer C apa citance

S WIT C HING CHAR AC TE R IS TIC S

Turn-On Delay Time

R ise Time

Turn-Off Delay T ime

F all Time

Total G a te C harge

G ate-S ource Charge

G ate-Drain Charge

C

IS S

V

DS

=15V, V

C

OS S

C

R S S

c

t

D(ON)

t

r

t

D(OFF )

t

f

f =1.0MH

VDD = 15V,
ID = 1A,
V

G S

= 10V,

R

G E N

VDS =15V, ID =1A,V

Q

g

VDS =15V, ID =1A,V

Q

Q

gs

gd

VDS =15V, ID = 1A,
V

G S

=10V

2

= 10

Z

G S

ohm

= 0V

G S

G S

=10V

=4.5V

510

235

56

21

20

27

115

13

6.5

2

2.3

230

40

40

55

20

10

P

F

P

F

P

F

ns

ns

ns

ns

nC

nC

nC

nC

S DM9410

E LE C T R IC AL C H AR AC T E R IS TIC S (TA=25 C unless otherwise noted)

P arameter

S ymbol

C ondition

Min

Typ

C

Max

Unit

DR AIN-S OU R C E DIO DE C HAR AC T E R IS T IC S

Diode F orward Voltage

Notes
a.S urface Mounted on F R 4 B oard, t 10s ec.

b.Pulse Test:P ulse W idth 300us, Duty Cycle 2%.

c.G uaranteed by des ign, not s ubject to production testing.

25

VGS=10, 9,8, 7,6,5,4 V

20

15

10

5

ID, Drain C urrent(A)

0

0 0. 5 1 1. 5 2 2 .5 3

VDS , Drain-to-Source Voltage (V)

F igure 1. Output Chara cteris tics

V

VGS =3V

S D

b

V

G S

= 0V, Is =5.3A

25

20

15

10

5

ID, Dra in C urrent (A)

0

0. 0 1. 0 2. 0 3. 0 4.0 5. 0 6.0

0.76

T j=1 25 C

-55 C

VGS , G ate-to-S ource Voltage (V )

1.1

25 C

F igure 2. Tra nsfer Characteris tics

V

120 0

100 0

800

600

400

C , C apa cita nce (pF)

200

0

0 5 1 0 15 2 0 25 30

VDS , Drain-to S ource Voltage (V)

C iss

C oss

C rss

F igure 3. C apacitance

On-R esistance(O hms)

R DS (O N),

0. 030

0. 025

0. 020

0. 015

0. 010

0. 005

VGS =10V

T j=1 25 C

0

0 5 10 1 5 20

ID, Dra in C urrent(A)

F igure 4. On-R es ista nce Va riation with

Drain C urrent and Temperature

3

25 C

-55 C

S DM9410

1.09

1.06

1.03

1.00

0.97

Vth, Normalized

0.94

0.91

G ate-S ource T hreshold Volta ge

-50 -25 0 25 50 75 100 125 150

VDS=V
ID=250uA

Tj, J unction T emperature ( C )

F igure 5. G ate Threshold V ariation

with Temperature

25

20

15

10

1.15

G S

B VD SS , Normalized

Dra in-S ource Breakdown Volta ge

ID=-250uA

1.10

1.05

1.00

0.95

0.90

0.85

-50 -25 0 25 50 75 100 125 150

Tj, J unction T emperature ( C )

F igure 6. B reakdown Volta ge Varia tion

with Temperature

40. 0

10. 0

5

gFS , T rans conductance ( S )

0

0 5 10 15 20

VDS=15V

IDS , Dra in-S ource C urrent (A)

F igure 7. T ransconductance V ariation

with Dra in C urrent

10

VDS=15V
ID=1A

8

6

4

2

VGS , Gate to S ource V oltage (V )

0

0 2 4 6 8 10 12 14 16

Qg, T ota l G ate C harge (nC )

F igure 9. G ate Charge

4

Is , S ource-drain current ( A)

1.0

0.4 0. 6 0.8 1. 0 1.2 1.4

VSD , Body Diode Forward Voltage (V )

F igure 8. B ody Diode F orward V oltage

Varia tion with S ource C urrent

40

10

1

0.1

ID, Dra in C urrent (A )

0.03

t

mi

Li

ON )

(

S

D

R

1

0

m

s

1

0

0

ms

1

V

G S

=10V

1s

DC

S ingle Pulse

TA=25 C

0.1 1 10 30 50

VDS , Drain-S ource V oltage ( V)

F igure 10. Maximum S afe
Ope rating Area

S DM9410

DD

V

on

t

d(off)

t

r

t

90%

10% 10%

INVE R TE D

50% 50%

V

V

d(on)

t

OU T

IN

10%

R

IN

V

V

G S

G EN

R

G

L

D

OU T

V

S

P ULS E W IDT H

90%

t

off

f

t

90%

F igure 11. S witching T est C ircuit

2

1

Duty C yc le=0.5

0. 2

0. 1

0. 1

0. 05

0. 01

0. 02

S ingle P ulse

-4

10

-3

10

r(t), Normalized E ffe ctive

T rans ient Thermal Impeda nce

F igure 13. Normalized T herma l T rans ient Impedance Curve

F igure 12. S witching W aveforms

-2

10

S quare Wave P ulse D uration (sec)

-1

10

DM

P

1

t

2

t

1. R qJA (t)=r (t) * R qJA

2. R qJA=S ee Data shee t

3. TJ M-T A = PDM* R qJA ( t)

4. Duty C ycle , D=t1/t2

1 10 100

5