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Elektronische Bauelemente
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
DESCRIPTION
These miniature surface mount MOSFETs
utilize a high cell density trench process to provide low
R
and to ensure minimal power loss and heat
DS(on)
dissipation. Typical applications are DC-DC
converters and power management in portable and
battery-powered products such as computers,.
printers, PCMCIA cards, cellular and cordless
telephones
FEATURES
Low R
battery life.
Low thermal impedance copper leadframe DFN2x5
saves board space
Fast switching speed
High performance trench technology
provides higher efficiency and extends
DS(on)
PACKAGE INFORMATION
Package MPQ Leader Size
SDF920NE
11A, 20V, R
Dual N-Ch Enhancement Mode Power MOSFET
H
N
I
J
DS(ON)
DFN2x5
E
F
22 m
D
G
L
C
B
A
O
DFN2x5 5K 13’ inch
K
M
2KV
Millimeter
REF.
Min. Max. Min. Max.
A 0.70 0.80 I 2.00 BSC
B 0.00 0.06 J 1.30 1.55
C 0.10 0.20 K 2.60 2.86
D0° 12° L 1.67 BSC
E 5.00 BSC M 0.15 BSC
F 4.50 BSC N 0.40 0.60
G 0.50 BSC
H
0.20 0.30
Millimete
REF.
O 0.00 0.10
MAXIMUM RATINGS (T
Drain-Source Voltage VDS 20 V
Gate-Source Voltage VGS ±12 V
Continuous Drain Current 1
Pulsed Drain Current 2 I
Continuous Source Current (Diode Conduction) 1 I
Total Power Dissipation 1
Operating Junction & Storage Temperature Range TJ, T
Maximum Junction-to-Ambient 1
= 25°C unless otherwise specified)
A
Parameter Symbol Value Unit
TA = 25°C
TA = 70°C 8.5 A
T
= 25°C
A
TA = 70°C 1.8 W
ID
±40 A
DM
3.1 A
S
P
D
-55~150 °C
STG
11 A
3.5 W
Thermal Resistance Ratings
t≦10 sec
Steady State 76 °C / W
R
θJA
36 °C / W
Notes
1. Surface Mounted on 1” x 1” FR4 Board.
2. Pulse width limited by maximum junction temperature.
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
20-Apr-2011 Rev. A Page 1 of 4
Page 2
SDF920NE
Elektronische Bauelemente
Dual N-Ch Enhancement Mode Power MOSFET
ELECTRICAL CHARACTERISTICS (T
= 25°C unless otherwise specified)
A
Parameter Symbol Min. Typ. Max. Unit Teat Condition
Static
Gate Threshold Voltage V
Gate-Body Leakage Current I
Zero Gate Voltage Drain Current I
On-State Drain Current 1 I
Drain-Source On-Resistance 1 R
Forward Transconductance 1 g
Diode Forward Voltage VSD - 0.7 - V IS=0.5A, VGS=0
Total Gate Charge Qg - 9.2 -
Gate-Drain Charge Qgd - 2.8 -
Turn-On Delay Time T
Rise Time Tr - 2.3 -
Turn-Off Delay Time T
Fall Time Tf - 4.4 -
Notes
1. Pulse test：PW ≦ 300μs duty cycle ≦ 2%.
2. Guaranteed by design, not subject to production testing.
0.5 - - V VDS=VGS, ID=250μA
GS(th)
- - ±10 μA VDS=0, VGS= ±12V
GSS
DSS
20 - - A VDS=5V, VGS=4.5V
D(on)
DS(ON)
- 22 - S VDS=15V, ID=6A
fs
- 1.7 -
d(on)
- 1.1 -
d(off)
- - 1
- - 30 VDS=16V, VGS=0, TJ=55°C
10 18 22
10.5 19 23 VGS=4V, ID=5.6A
11 23 28 VGS=2.5V, ID=4.5A
Dynamic 2
11A, 20V, R
μA
mΩ
nC ID=6A, VDS=10V, VGS=4.5V Gate-Source Charge Qgs - 1.9 -
nS
DS(ON)
V
=16V, VGS=0
DS
V
=4.5V, ID=6.7A
GS
=10V, V
V
DD
I
=1A, RL=15Ω
D
22 m
=4.5V
GEN
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
20-Apr-2011 Rev. A Page 2 of 4
Page 3
Elektronische Bauelemente
RATINGS AND CHARACTERISTIC CURVES
SDF920NE
11A, 20V, R
Dual N-Ch Enhancement Mode Power MOSFET
DS(ON)
22 m
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
20-Apr-2011 Rev. A Page 3 of 4
Page 4
Elektronische Bauelemente
RATINGS AND CHARACTERISTIC CURVES
SDF920NE
11A, 20V, R
Dual N-Ch Enhancement Mode Power MOSFET
DS(ON)
22 m
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
20-Apr-2011 Rev. A Page 4 of 4
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