Datasheet SDD3055L2, SDU3055L2 Datasheet (SamHop Microelectronics)

S DU/D3055L2

S amHop Microelectronics C orp.

Augus t , 20 02

N-C hannel E nhancement Mode Field E ffect Trans is tor

PR ODUC T SUMMAR Y

VDS S

20V

ID

15A

R DS (O N) ( m

34 @ V GS = 4. 5V

45 @ V GS = 2. 5V

D

G

S

S DU S E RIE S
TO-252AA(D-PAK )

W

) TY P

G

D

S

S DD SE R IE S
TO-251(l-PA K)

AB S OLUT E MA XIMUM R AT ING S (TA=25 C unles s otherwis e noted)

F E ATUR E S

S uper high dense cell des ign for low R

R ugged and reliable.

TO-252 and T O -251 P ackage.

D

G

S

DS (O N

).

P arameter

Drain-S ource Voltage

G ate-S ource Voltage

Drain C urrent-C ontinuous @ TJ=125 C

-P ulsed

a

b

(300ms P uls e Width)

Drain-S ource Diode F orward C urrent

Maximum P ower Dissipation

a

Operating Junction and S torage
Temperature R ange

THE R MA L C HA R A C TE R IS TICS

Thermal R esistance, J unction-to-C ase

Thermal R esistance, J unction-to-Ambient

S ymbol

V

DS

V

G S

I

D

I

DM

a

P

TJ, T

R

R

I

S

D

S TG

J C

J A

Limit Unit

20

12

15

45

15

50

-55 to 150

3

50

V

V

A

A

A

W

C

C

C

/W

/W

1

S DU/D3055L2

E LE C TR IC AL C HAR AC TE R IS TIC S (T A 25 C unless otherwise noted)

P arameter

S ymbol

=

C ondition

Min

Typ

C

OF F C HAR AC T E R IS TIC S

Drain-S ource B reakdown Voltage

Zero G ate Voltage Drain C urrent

G ate-Body Leakage

ON C HAR AC T E R IS T IC S

b

G ate Threshold Voltage

Drain-S ource On-S tate R es is tance

On-S tate Drain C urrent

0V, ID 250uA

B V

DS S

I

DS S

I

G S S

V

G S (th)

R

DS (ON)

I

D(ON)

g

F S

c

VDS 20V, V

V

G S

V

DS VG S

V

G S

V

G S

V

DS

V

DS

=

=

= =

=

= 5V, V

G S

8V, VDS 0V

=

, ID = 250uA

=

=

= =

4.5V, I

2.5V, I

10V, I

D

D

G S

D

=

=

= 4.5V

0V

=

6.0A

5.2A

6.0A

20

0.7

20

34

45

17

V

G S

DYNAMIC C HAR AC TE R IS T ICS

Max

1

100

60

70

Unit

V

uA

nA

V

m-ohm

m-ohm

A

SF orward Transconductance

Input C apacitance

Output Capacitance

R evers e Trans fer C apacitance

S WIT C HING C HAR AC TE R IS T ICS

Turn-On Delay Time

R ise Time

Turn-Off Delay T ime

F all Time

Total G a te C harge

G ate-S ource Charge

G ate-Drain Charge

C

IS S

V

DS

=8V, V

G S

= 0V

C

OS S

C

R S S

c

t

D(ON)

t

r

t

D(OFF )

t

f

Q

g

Q

gs

Q

gd

f =1.0MH

Z

VDD = 10V,
ID = 1A,
V

G E N

= 4.5V,
RL = 10
R

GE N

= 6

ohm

ohm

VDS=10V,ID =6A,V

VDS=10V,ID =6A,V

VDS =10V, ID = 6A,
V

G S

=10V

2

G S

G S

=10V

=4.5V

705

280

65

10

15 30

35

20 40

25

9.3 11.5

2

2

P

P

P

20 ns

ns

ns

60

ns

30

nC

nC

nC

nC

F

F

F

S DU/D3055L 2

E L E C TR IC AL C HA R A C TE R IS T IC S (TA=25 C unles s otherwis e

P a rameter

S ymbol

C o ndition

Min

Typ

C

Max

Unit

5

DR AIN-S OUR CE DIODE CHAR AC T E R IS TIC S

Diode F orward Voltage

V

S D

b

V

G S

= 0V, Is =1.7A

0.72

1.2

V

Notes
a.S urface Mounted on FR 4 B oard, t <= 10sec.

b.Pulse Test:P ulse W idth <=300us , Duty Cycle<= 2%.

c.G uaranteed by des ign, not s ubject to production testing.

25

VGS = 3, 4,10 V

20

15

10

5

ID, Drain C urrent(A)

0

0 1 2 3 4 5 6

VDS , Drain-to-S ource Voltage (V )

F igure 1. Output Characteristics

VGS = 2V

25

20

15

10

T j=125 C

5

ID, Dra in C urrent (A)

0

0. 0 0. 5 1 1.5 2 2.5 3

VGS , G ate-to-S ource Voltage (V )

25 C

F igure 2. T ransfer C haracteristics

-55 C

300 0

250 0

200 0

150 0

100 0

C , C apa citanc e (pF)

500

0

0 2 4 6 8 10 12

VDS , Drain-to S ource Voltage (V )

F igure 3. Capacitance

C iss

C oss

C rss

1. 8
VGS =4.5 V

ID=6A

1. 6

1. 4

1. 2

1. 0

On-R esistance(O hms)

(Normalized)

0. 8

R DS (O N),

0. 6

-50 0 50 100 15 0

Tj, J unction T emperature ( C )

F igure 4. On-R esistance Variation with

Temperature

3

S DU/D3055L 2

1.09

VDS=V

1.06

1.03

1.00

0.97

Vth, Normalized

0.94

0.91

G ate-S ource T hreshold Voltage

-50 -25 0 25 50 7 5 100 1 25 150

Tj, J unction T emperature ( C )

GS

ID=250uA

F igure 5. Gate T hr eshold V ariation

with Temperatur e

36

30

24

18

12

6

gFS , T rans conductance ( S )

0

0 3 6 9 12 15

VDS=10V

1.15

1.10

1.05

1.00

0.95

0.90

B VD SS , Normalized

0.85

Dra in-S ource Breakdown Voltage

ID=250uA

5

-50 -25 0 25 50 75 100 125 1 50

Tj, J unction T emperature ( C )

F igure 6. Breakdown V oltage V ariation

with Temperatur e

20

10

1

Is , S ource-drain current ( A)

0

0.4 0. 6 0.8 1.0 1 .2 1. 4

TJ=25 C

IDS , Dra in-S ource C urrent (A)

F igure 7. T r ansconductance V ariation

with Drain Current

10

VDS=10V

8

ID=6A

6

4

2

VGS , Gate to S ource V oltage (V)

0

0 4 8 12 16 20 24 28

Qg, T otal Gate C harge (nC )

32

F igure 9. Gate Char ge

VSD , Body Diode Forward Voltage (V )

F igure 8. Body Diode F orward V oltage

V ar iation with Sour ce C urrent

50

10

(O N) L imit

S

D

R

1

1

V

G S

0.1

ID, Dra in C urrent (A )

0.03

=4.5V

S ingle Pulse

Tc=25 C

0.1 1 10 20 50

VDS , Drain-S ource V oltage (V )

10ms

100 ms

1s

DC

F igure 10. Maximum Safe
Operating Area

4

S DU/D3055L 2

DD

V

5

V

G S

R

G EN

IN

V

D

G

S

on

t

d(off)

t

r

d(on)

R

L

OU T

V

t

OU T

V

IN

V

10%

t

90%

10% 10%

INVE R TE D

50% 50%

90%

t

off

f

t

90%

P ULS E W IDT H

F igure 11. Switching T est C ircuit

2

1

Duty C yc le=0.5

0. 2

0. 1

0. 1

0. 05

0. 01

0. 02

S ingle P ulse

-4

10

-3

10

r(t), Normalized E ffective

T rans ient Thermal Impeda nce

F igure 13. Normalized T hermal T r ansient I mpedance Curve

F igure 12. Switching W aveforms

-2

10

S quare Wave P ulse D uration (sec)

-1

10

DM

P

1

t

2

t

1. R thJA ( t)=r ( t) * R thJA

2. R thJA=S ee Datas heet

3. TJ M-T A = PDM* R thJA (t)

4. Duty C ycle , D=t1/t2

1 10 100

5