Datasheet SDBN500B01 Datasheet (Diodes) [ru]

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General Description

• SDBN500B01 is best suited for switching inductive loads
in power switching applications. It improves efficiency
and reliability of power switching systems and it can
support continuous maximum current of 500 mA. It
features NPN transistor with high breakdown voltage
and discrete switching diode with high forward surge

NEW PRODUCT

current. It reduces component count, consumes less
space and minimizes parasitic losses. The component
devices can be used as a part of a circuit or as a stand
alone discrete device.

Features

• NPN Transistor with High Break-Down Voltage

• Switching Diode with High Forward Surge

• Low Switching and Conduction Losses

• Surface Mount Package Suited for Automated Assembly

• Lead Free By Design/RoHS Compliant (Note 1)

• "Green" Device (Note 2)

Mechanical Data

• Case: SOT-363

• Case Material: Molded Plastic, "Green" Molding

Compound. UL Flammability Classification Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020C

• Terminal Connections: See Figure

• Terminals: Finish ⎯ Matte Tin annealed over Alloy 42

leadframe. Solderable per MIL-STD-202, Method 208

• Marking and Type Code Information: See Page 6

• Ordering Information: See Page 6

• Weight: 0.016 grams (approximate)

SDBN500B01

500mA NPN TRANSISTOR SWITCH WITH SNUBBER DIODE

6

5

4

1

2

3

SOT-363

BQ1

5

2

NC

EQ1

4

Q1

3

CQ1

CD1

6

D1

1

AD1

Schematic and Pin Configuration

Sub-Component P/N Reference Device Type

MMBTA06_DIE Q1 NPN Transistor

BAS31_DIE D1 Switching Diode

Maximum Ratings: Total Device @T

Characteristic Symbol Value Unit

Power Dissipation (Note 3)
Power Derating Factor above 25°C
Output Current

= 25°C unless otherwise specified

A

P

d

P

der

I

out

200 mW

1.6

500 mA

mW / °C

Thermal Characteristics

Characteristic Symbol Value Unit

Junction Operating and Storage Temperature Range
Thermal Resistance, Junction to Ambient Air (Note 3)

(Equivalent to One Heated Junction of NPN Transistor)

Notes: 1. No purposefully added lead.

2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.

3. Device mounted on FR-4 PCB, 1" x 0.85" x 0.062"; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which

can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.

Tj, T

R

θ

STG

JA

-55 to +150
625

°C

°C/W

DS30835 Rev. 3 - 2 1 of 6

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SDBN500B01

© Diodes Incorporated

Maximum Ratings:
Sub-Component Device – Switching Diode (D1) @T

= 25°C unless otherwise specified

A

Characteristic Symbol Value Unit

Non-Repetitive Peak Reverse Voltage
Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage
DC Blocking Voltage

RMS Reverse Voltage
Forward Continuous Current (Page 1: Note 3)
Average Rectified Output Current (Page 1: Note 3)

NEW PRODUCT

Non-Repetitive Peak Forward Surge Current @ t = 1.0 us 4 A
@ t = 1.0 s

V
V
V

V

R(RMS)

I

I

FSM

RM
RRM
RWM

V

R

FM

I

O

Sub Component Device - Discrete NPN Transistor (Q1) @T

100 V

75 V

53 V
500 mA
250 mA

2 A

= 25°C unless otherwise specified

A

Characteristic Symbol Value Unit

Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Output Current - continuous (Page 1: Note 3)

V

CBO

V

CEO

V

EBO

I

C

80 V
80 V

4 V

500 mA

Electrical Characteristics:
Switching Diode (D1) @T

Characteristic Symbol Min Typ Max Unit Test Condition

Reverse Breakdown Voltage (Note 4)

Forward Voltage Drop (Note 4)

Reverse Current (Note 4)

Total Capacitance
Reverse Recovery Time

Notes: 4. Short duration pulse test used to minimize self-heating effect.

= 25°C unless otherwise specified

A

V

(BR)R

75

0.62

V

FM

⎯ ⎯
⎯ ⎯
⎯ ⎯
⎯ ⎯

I

R

⎯ ⎯
⎯ ⎯
⎯ ⎯

C

T

t

rr

⎯ ⎯
⎯ ⎯

⎯
⎯

⎯

0.37

0.855
1

1.25

2.5
50
30
25

4 pF
4 ns

V

IR = 10 μA
IF = 5 mA
IF = 10 mA

V

IF = 100 mA
IF = 150 mA
VR = 75V
VR = 75V, Tj = 150 °C

μA

VR = 25V, Tj = 150 °C
VR = 20V
VR = 0V, f = 1.0 MHz
IF = IR = 10mA, Irr = 0.1xIR, RL = 100 Ω

NEW PRODUCT

DS30835 Rev. 3 - 2 2 of 6

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SDBN500B01

© Diodes Incorporated

P, P

OWER

P

T

O

N

Discrete NPN Transistor (Q1) @T

OFF CHARACTERISTICS (Note 4)

Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Base Cutoff Current (I
Collector-Base Cut Off Current
Collector-Emitter Cut Off Current, I

NEW PRODUCT

Emitter-Base Cut Off Current
ON CHARACTERISTICS (Note 4)

DC Current Gain

Collector-Emitter Saturation Voltage

Base-Emitter Turn-on Voltage
Base-Emitter Saturation Voltage
SMALL SIGNAL CHARACTERISTICS

Output Capacitance
Input Capacitance
Current Gain-Bandwidth Product
SWITCHING CHARACTERISTICS
Delay Time
Rise Time

Pulse Test: Pulse width, tp<300uS, Duty Cycle, d<=2%
Notes: 4. Short duration pulse test used to minimize self-heating effect.

Characteristic Symbol Min Max Unit Test Condition

V
V
V

) I

BEX

O(OFF)

V

= 25°C unless otherwise specified

A

BR(CBO)
BR(CEO)
(BR)EBO

I

CEX

BL

I

CBO

I

CEO

I

EBO

80
80

4

⎯
⎯
⎯
⎯
⎯

100 nA
100 nA
100 nA
100 nA
100 nA

60
80

h

FE

100
100

90
80

0.1 V

0.25 V

0.35 V

0.98 V

0.95 V

1.2 V

CE(SAT)

V

BE(ON)

V

BE(SAT)

C

OBO

C

IBO

f

T

t

d

t

⎯
⎯
⎯
⎯
⎯
⎯

⎯
⎯

100

⎯

r

⎯

⎯
⎯
⎯

V
V
V

IC = 10 μA, IE = 0
IC = 1.0 mA, IB = 0
IE = 100 μA, IC = 0
VCE = 60V, V
VCE = 60V, V

EB(OFF)
EB(OFF)

= 3.0V

= 3.0V
VCB = 80V, IE = 0
VCE = 80V, IB = 0
VEB = 5V, IC = 0

⎯ ⎯ V
⎯ ⎯ V
⎯ ⎯ V
⎯ ⎯ V

= 1V, IC = 100 μA

CE

= 1V, IC = 1 mA

CE

= 1V, IC = 10 mA

CE

= 1V, IC = 50 mA

CE

⎯ ⎯ VCE = 1V, IC = 100 mA
⎯ ⎯ V

= 1V, IC = 200 mA

CE

IC = 10 mA, IB = 1 mA
IC = 100 mA, IB = 10 mA
IC = 200 mA, IB = 20 mA
VCE = 5V, IC = 2 mA
IC = 10 mA, IB = 1 mA
IC = 100 mA, VCE = 1V

4 pF
6 pF

⎯

MHz

35 ns
35 ns

VCB = 5.0 V, f = 1.0MHz, IE = 0
VEB = 5.0 V, f = 1.0MHz, IC = 0
V

= 2 V, IC = 10mA, f = 100MHz

CE

VCC = 3.0 V, IC = 10mA,

= 0.5V, IB1 = 1.0mA

V

BE(OFF)

Typical Characteristics

250

200

(mW)
I

150

A

DISSI

D

100

50

R = 625°C/W

θ

JA

0

T , AMBIENT TEMPERATURE (°C)

A

Fig. 1, Maximum Power Dissipation vs.

Ambient T emperature

DS30835 Rev. 3 - 2 3 of 6

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SDBN500B01

© Diodes Incorporated

TANT

O

US FORWAR

CUR

RENT

NSTAN

TANEO

US R

R

CUR

R

N

T

C, TOT

CAPACITANC

F

C

O

CTO

R

CUR

RENT

C

O

C

T

O

R

T

T

R VOLT

G

C

OLLECTOR T

O E

MITTE

R

Switching Diode (D1) Characteristics

1,000

(mA)

100

D

NEW PRODUCT

10

10,000

(nA )
E

1,000

SE

100

EVE

10

T = 125ºC

A

T = 75ºC

A

T = 25ºC

A

1

ANE

F

I , INS

0.1
0

V , INSTANTANEOUS FORWARD VOLTAGE (V)

F

Fig. 2, Typical Forward Characteristics

3

2.5

)
E (p

2

1.5

AL

1

T

0.5

0

01020 403050

V , REVERSE VOLTAGE (V)

Fig. 4, Typical Capacitance vs. Reverse Voltage

R

2.0

1.8

E (V)
A

1.6

I = 30mA

C

f = 1MHz

T = 0ºC

1

R

I, I

0.1

1.61.20.4 0.8

0

20 40 60 80 100

V , REVERSE VOLTAGE (V)

R

Fig. 3, Typical Reverse Characteristics

A

T = -40ºC

A

10

V = 80V

CB

(nA)

1

-BASE

0.1

LLE

CBO

I,

0.01
25 50 75 100 125

T , AMBIENT TEMPERATURE (ºC)

A

Fig. 5, I vs T

CBO A

0.500

I

0.450

C

= 10

I

B

0.400

0.300

0.250

0.200

0.150

SATURATION VOLT AGE (V)

CE(SAT)

0.100

V,

0.050

0.350

0

110

I , COLLECTOR CURRENT (mA)

C

Fig. 7, V vs I

T = 150°C

A

CE(SAT) C

T = 25°C

A

100

© Diodes Incorporated

T = -50°C

A

1,000

SDBN500B01

1.4

I = 1mA

C

E

1.2

1.0

EMI

0.8

0.6

LLE

I = 10mA

C

I = 100mA

C

0.4

CE

V,

0.2
0

0.001 0.01

0.1 1

I BASE CURRENT (mA)

B,

Fig. 6, V vs I

CE B

10

100

DS30835 Rev. 3 - 2 4 of 6

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C CUR

R

N

T

GAIN

T

T

R

OLTAG

G

T

H PRODUCT

H

C

10,000

1,000

E

100

1.0

V = 5V

CE

0.9

E (V)

0.8

T = -50°C

0.7

V
E

0.6

A

T = 25°C

A

0.5

NEW PRODUCT

T = 150°C

A

110

Fig. 9, V vs I

BE(ON) C

100

FE

h, D

10

0.4

0.3

BE(ON)

V , BASE EMI

0.2

1

1

10 1,000

I , COLLECTOR CURRENT (mA)

C

Fig. 8, h vs I

100

FE C

0.1

0.1
I , COLLECTOR CURRENT (mA)

C

1,000

z)
(M

100

10

AIN BANDWID

T

f,

1

1

I , COLLECTOR CURRENT (mA)

C

Fig. 10, f vs I

T

10

Application Details:

V supply

NPN transistor (MMBTA06) and Switching diode (BAV70) integrated as
one in SDBN500B01 can be used as a discrete entity for general
applications or part of a circuit to function as low side switch for sinking
current. NPN is selected based on high break-down voltage and
maximum collector current range. Switching diode is selected based
on instantaneous forward surge current. The Switching diode
dissipates very little power because it is on for only a small portion of
the switching cycle. It is designed to replace the discrete NPN
transistor and a Switching diode in two separate packages into one

SDBN500B01

R1

small package as shown in Figure. It consumes less board space and
also helps to minimize conduction or switching losses due to parasitic
inductances (e.g. PCB traces) in power switch applications. (Please
see Fig. 11 for one example of typical application circuit used in
conjunction with DC-DC converter as a part of the power management

R2

system).

Fig. 11, Typical Application Circuit

DS30835 Rev. 3 - 2 5 of 6

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Inductive Load

SDBN500B01

© Diodes Incorporated

Ordering Information (Note 5)

Device

SDBN500B01-7

Notes: 5. For packaging details, please see below or go to our website at http://www.diodes.com/datasheets/ap02007.pdf.

Marking Code Packaging Shipping

RD07 SOT-363 3000/Tape & Reel

Marking Information

NEW PRODUCT

Date Code Key

RD07

Year

Code

Month Jan Feb Mar Apr May Jun Jul

Code 1 2 3 4 5 6 7

2006 2007 2008 2009 2010 2011 2012

T U V W X Y Z

RD07 = Product Type Marking Code,
YM = Date Code Marking
Y = Year e.g. T = 2006

YM

M = Month e.g. 9 = September

Aug Sep Oct Nov Dec

8 9 O N D

Mechanical Details

K

J

A

C

B

H

M

LDF

SOT-363

Dim Min Max

A 0.10 0.30
B 1.15 1.35
C 2.00 2.20
D 0.65 Nominal

F 0.30 0.40

H 1.80 2.20

J – 0.10

K 0.90 1.00

L 0.25 0.40

M 0.10 0.25

0° 8°

α

All Dimensions in mm

Suggested Pad Layout: (Based on IPC-SM-782)

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product
described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall
assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website,
harmless against all damages.

Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written
approval of the President of Diodes Incorporated.

DS30835 Rev. 3 - 2 6 of 6

G

Z

Y

X

EE

Dimensions Value

Z 2.5
G 1.3

C

MPORTANT NOTICE

LIFE SUPPORT

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X 0.42
Y 0.6
C 1.9
E 0.65

All Dimensions in mm

SDBN500B01

© Diodes Incorporated