Datasheet SDB65N03L, SDP65N03L Datasheet (SamHop Microelectronics)

S amHop Microelectronics C orp.

S DP /B65N03L

S eptember , 2002

4

PR ODUC T S UMMAR Y

VDS S

30V

ID

65A

D

G

S

S DB S E RIE S
TO-2 63(DD-PAK)

R DS (on) ( m

12 @ VGS = 4. 5V

W

) T YP

8 @ VGS = 10V

G

D

S

S DP S E RIE S
TO-2 20

F E ATUR E S

S uper high dense cell design for extremely low R DS (ON).

High power and current handling capability.

TO-220 & TO-263 package.

D

G

S

ABS OLUTE MAX IMUM R ATING S (TC =25 C unless otherwise noted)

P arameter

Drain-S ource Voltage

S ymbol

V

DS

Limit Unit

30

V

G ate-S ource Voltage

Drain C urrent-C ontinuous @ TJ =125 C

-P ulsed

a

Drain-S ource Diode Forward C urrent

Maximum P ower Dissipation

@ T c=25 C

Derate above 25 C

Operating and S torage

Temperature R ange

THE R MAL C HAR AC TE R IS TIC S

Thermal R es is tance, J unction-to-C a s e

Thermal R es is tance, J unction-to-Ambient

V

I

P

TJ, T

R

R

G S

I

D

DM

I

S

D

1

S TG

J C

J A

20

65

195

65

75

0.5

-65 to 175

2

62.5

V

A

A

A

W

W / C

C

C

/W

C

/W

S DP /B 65N03L

E LE C T R IC AL C H AR AC T E R IS T IC S (T C 25 C unless otherwis e noted)

P arameter

S ymbol

=

C ondition

Min

Typ

OF F CHAR ACT E R IS T IC S

Drain-S ource B reakdown Volta ge

Zero G ate Voltage Drain Current

G a te-Body Leakage

ON C HAR AC TE R IS TIC S

a

G a te T hres hold Voltage

Drain-S ource On-S tate R es istance

On-S ta te Drain C urrent

0V, ID 250uA

B V

DS S

I

DS S

I

G S S

V

G S (th)

R

DS (ON)

I

D(ON)

g

F S

b

VDS 24V, V

V

G S

V

DS VG S

V

G S =

V

G S =

V

DS

V

DS =

=

=

G S

= =

=

=

0V

20V, VDS 0V

=

, ID = 250uA

10V, ID = 26A

4.5V, ID = 21A

= 10V, V

G S

= 10V

10V, ID = 26A

30

1 1.5 3

65

8

12

38

V

G S

DYNAMIC C HAR AC TE R IS TICS

C

Max

10

100

9

15

Unit

V

uA

nA

V

m ohm

m ohm

A

SF orward Transconductance

4

Input C apacitance

Output C apacitance

R evers e Transfer C apacitance

S WIT C HING C HAR AC TE R IS TIC S

Turn-O n Delay Time

R ise Time

Turn-O ff Delay Time

F all Time

Total G ate Charge

G a te-S ource C harge

G a te-Drain C harge

b

C

IS S

C

OS S

C

R S S

t

D(ON)

t

t

D(OFF)

t

Q

Q

Q

V

f =1.0MH

VDD = 15V,

r

ID = 1A,
V
R

f

VDS =10V, ID =65A,V

g

VDS =10V, ID =65A,V

gs

gd

VDS =10V, ID = 65A,
V

DS

=15V, V

G S

= 10V

G E N

G S

=10V

2

= 6

G S

Z

ohm

= 0V

G S

G S

=10V

=4.5V

1350

625

190

30

32

132

30

50

41

20.5 24.5

6.9

5.8

P

F

P

F

P

F

ns

ns

ns

ns

nC

nC

nC

nC

S DP /B 65N03L

E LE C T R IC AL C H AR AC T E R IS T IC S (TC=25 C unless otherwis e noted)

4

Typ

P arameter

S ymbol

C ondition

Min

Max

Unit

DR AIN-S O UR C E DIODE C HAR AC T E R IS T IC S

Diode F orward Voltage

Notes

a.Puls e Tes t:P ulse W idth 300us, Duty C ycle 2% .
b.Guaranteed by des ign, not s ubject to production tes ting.

80

70

60

50

40

30

20

ID, Drain C urrent(A)

10

0

0 0. 5 1. 0 1. 5 2. 0 2.5 3. 0

VDS , Drain-to-S ource Volta ge (V)

F igure 1. O utput C haracteristics

VGS =10, 9,8, 7,6, 5V

V

S D

VGS =4V

VGS =3V

a

V

G S

= 0V, Is =26A

25

20

15

10

ID, Dra in C urrent (A)

1.3

0.9

25 C

5

0

1 2 3 4 5 6

VGS , G ate-to-S ource Volta ge (V)

T J=125 C

-55 C

F igure 2. Trans fer C haracteris tics

V

360 0

300 0

240 0

180 0

120 0

600

C , C apa citanc e (pF)

0

0 5 10 15 20 25 30

VDS , Drain-to S ource V olta ge (V)

F igure 3. C apacitance

C iss

C oss

C rss

2. 2

VGS=10V 

I

D

=26A

1. 8

1. 4

1. 0

0. 6

0. 2

Dra in-S ource O n-R es istanc e

R DS (O N), Norma lized

0

-50 0 50 100 125

-25 25

75

F igure 4. O n-R esis tance Variation with

Temperature

3

T j( C)

S DP /B 65N03L

1.3
VDS=V

1.2

1.1

1.0

0.9

0.8

Vth, Norma lized

0.7

G ate-Source T hres hold V oltage

0.6

-50 -25 0 25 50 75 100 125

G S

ID=250uA

B VDS S, N ormalized

Tj, J unction T emperature ( C)

1.15

1.10

1.05

1.00

0.95

0.90

0.85

Dra in-S ource Breakdown V oltage

-50 -25 0 2 5 50 75 100 125

ID=250uA

4

Tj, J unction T emperature ( C)

F igure 6. B reakdown V oltage V ariation F igure 5. G ate Thres hold Variation

with T empera ture

50

40

30

20

10

gFS , T rans conductanc e (S )

0

0 10 20 3 0 4 0

VDS=10V

Is , S ource-dra in current (A)

with T empera ture

50

10

1.0

0.1

0.4 0.6 0.8 1.0 1.2 1.4

IDS , Drain-S ource C urrent (A)

F igure 7. T rans conductance Variation

with Drain C urrent

10

8

6

VGS , G ate to S ource Volta ge (V )

0

VDS=10V
ID=65A

4

2

0 6 12 18 3024 36 42 48

Qg, T otal Gate Charge (nC )

F igure 9. G ate C harge

VS D, Body Diode F orward V olta ge (V )

F igure 8. B ody Diode Forward Voltage

Variation with S ource C urrent

300
200

100

10

ID, Dra in C urrent (A )

1

0.5

0.1

mit

i

ON)L

(

S

D

R

V

G S

=10V

S ingle P ulse

Tc=25 C

1

0

ms

1

0

0

ms

DC

1 10 30 60

VDS , Drain-S ource V oltage (V )

F igure 10. Maximum S afe
O perating Area

4

1

0

0

μ

s

1ms

S DP /B 65N03L

4

IN

V

V

G S

G EN

R

G

DD

V

on

t

d(off)

t

r

t

90%

INVE R TE D

10% 10%

50% 50%

V

V

d(on)

t

OU T

IN

10%

R

L

D

OU T

V

S

90%

t

off

f

t

90%

P ULS E W IDT H

F igure 11. S witching T est C ircuit

2

1

D=0. 5

0. 2

0. 1

0. 1

0. 05

0. 02

r(t), Norma lized Effective

0. 01

T rans ient Thermal Impedance

0. 01

S ingle P ulse

0. 01 0. 1 1 10 100 100 0 100 00

F igure 12. S witching W aveforms

DM

P

1

t

2

t

1. R θJC (t)=r (t) * R θJ C

2. R θJC =S ee D atas heet

3. TJ M-T C = P* R θJC (t)

4. Duty C ycle , D=t1/t2

S quare Wave P ulse Duration (ms ec)

F igure 13. Norma lized T hermal T rans ient Impedance C urve

5