Datasheet SDB60N03L, SDP60N03L Datasheet (SamHop Microelectronics)

S DP /B60N03L

S amHop Microelectronics C orp.

S eptember , 2002

4

PR ODUC T S UMMAR Y

VDS S

30V

ID

60A

D

G

S

S DB S E RIE S
TO-2 63(DD-PAK)

R DS (on) ( m

9.5 @ VG S = 10V

16 @ VGS = 4. 5V

W

)

TYP

G

D

S

F E ATUR E S

S DP S E RIE S
TO-2 20

S uper high dense cell design for extremely low R DS (ON).

High power and current handling capability.

TO-220 & TO-263 package.

D

G

S

ABS OLUTE MAX IMUM R ATING S (TC =25 C unless otherwise noted)

P arameter

Drain-S ource Voltage

S ymbol

V

DS

Limit Unit

30

V

G ate-S ource Voltage

Drain C urrent-C ontinuous @ TJ =125 C

-P ulsed

a

Drain-S ource Diode Forward C urrent

Maximum P ower Dissipation

@ T c=25 C

Derate above 25 C

Operating and S torage

Temperature R ange

THE R MAL C HAR AC TE R IS TIC S

Thermal R es is tance, J unction-to-C a s e

Thermal R es is tance, J unction-to-Ambient

V

I

P

TJ, T

R

R

G S

I

D

DM

I

S

D

1

S TG

J C

J A

20

60

180

60

75

0.5

-65 to 175

2.5

62.5

V

A

A

A

W

W / C

C

C

/W

C

/W

S DP /B60N03L

E LE C T R IC AL C H AR AC T E R IS T IC S (T C 25 C unless otherwis e noted)

4

P arameter

S ymbol

=

C ondition

OF F CHAR ACT E R IS T IC S

V

G S

Drain-S ource B reakdown Volta ge

Zero G ate Voltage Drain Current

G a te-Body Leakage

ON C HAR AC TE R IS TIC S

a

G a te T hres hold Voltage

Drain-S ource On-S tate R es istance

On-S ta te Drain C urrent

B V

DS S

I

DS S

I

G S S

V

G S (th)

R

DS (ON)

I

D(ON)

g

F S

b

0V, ID 250uA

=

VDS 24V, V

= =

V

G S

16V, VDS 0V

=

V

DS VG S

, ID = 250uA

=

V

G S =

10V, ID = 30A

V

GS =

4.5V, ID = 24A

V

G S

= 10V, V

V

DS =

10V, ID = 26A

=

G S

DS

0V

=

= 10V

DYNAMIC C HAR AC TE R IS TICS

Typ

Min

30

1 1.5 3

9.5

16

60

32

Max

10

100

11

19

Unit

V

uA

nA

V

m ohm

m ohm

A

SF orward Transconductance

Input C apacitance

Output C apacitance

R evers e Transfer C apacitance

S WIT C HING C HAR AC TE R IS TIC S

Turn-O n Delay Time

R ise Time

Turn-O ff Delay Time

F all Time

Total G ate Charge

G a te-S ource C harge

G a te-Drain C harge

P

C

IS S

V

DS

=15V, V

C

OS S

C

R S S

b

t

D(ON)

t

r

t

D(OFF)

t

f

f =1.0MH

VDD = 15V,
ID = 1A,
V

G S

= 10V,

R

G E N

VDS =15V,ID =30A,V

Q

g

VDS =15V,ID =30A,V

Q

Q

gs

gd

VDS =15V, ID = 30A,
V

G S

=10V

2

=60

G S

Z

ohm

= 0V

G S

G S

=10V

=4.5V

1200

550

160

25

30.5

60

27.5

34.1

45

18.7 22.5

6.3

7

F

P

F

P

F

ns

ns

ns

ns

nC

nC

nC

nC

S DP /B60N03L

E LE C T R IC AL C H AR AC T E R IS T IC S (TC=25 C unless otherwis e noted)

P arameter

S ymbol

C ondition

Min

Typ

Max

4

Unit

DR AIN-S O UR C E DIODE C HAR AC T E R IS T IC S

Diode F orward Voltage

Notes

a.Pulse Tes t:Pulse Width 300us , Duty Cycle 2%.
b.Guaranteed by des ign, not s ubject to production tes ting.

50

VGS =10, 9,8, 7,6, 5,4 V

40

30

20

ID, Drain C urrent(A)

10

0

0 0 .5 1. 0 1. 5 2. 0 2. 5 3 .0

VDS , Drain-to-S ource Volta ge (V)

F igure 1. O utput C haracteristics

V

VGS =3V

S D

a

V

G S

= 0V, Is =26A

25

20

15

10

ID, Dra in C urrent (A)

5

0

25 C

-55 C

1 2 3 4 5 6

VGS , G ate-to-S ource Volta ge (V)

F igure 2. Trans fer C haracteris tics

0.9

T J=125 C

1.3

V

300 0

250 0

200 0

150 0

100 0

C , C apa citanc e (pF)

500

0

0 1 05 15 20 25 30

VDS , Drain-to S ource V olta ge (V)

F igure 3. C apacitance

C iss

C oss

C rss

2. 2

VGS=10V 

I

D

=30A

1. 8

1. 4

1. 0

0. 6

0. 2

Dra in-S ource O n-R es istanc e

R DS (O N), Norma lized

0

-50 0 50 100 125

-25

25

75

F igure 4. O n-R esis tance Variation with

Temperature

3

T j( C)

S DP /B60N03L

1.3
VDS=V

4

1.2

1.1

1.0

0.9

0.8

Vth, Norma lized

0.7

G ate-Source T hres hold V oltage

0.6

-50 -25 0 25 50 75 100 125

Tj, J unction T emperature ( C)

G S

ID=250uA

B VDS S, N ormalized

F igure 5. G ate Thres hold Variation

with T empera ture

50

40

30

20

1.15

1.10

1.05

1.00

0.95

0.90

0.85

Dra in-S ource Breakdown V oltage

-50 -25 0 25 50 75 10 0 1 25

Tj, J unction T emperature ( C)

ID=250uA

F igure 6. B reakdown V oltage V ariation

with T empera ture

50

10

1

10

gFS , T rans conductanc e (S )

0

0 10 20 30 40

IDS , Drain-S ource C urrent (A)

VDS=10V

F igure 7. T rans conductance Variation

with Drain C urrent

10

VDS=15V

8

ID=30A

6

4

2

VGS , G ate to S ource Volta ge (V )

0

0 5 10 15 20 25 30 35 40

Qg, T otal Gate Charge (nC )

F igure 9. G ate C harge

Is , S ource-dra in current (A)

0.1

0.4 0.6 0.8 1.0 1.2 1. 4

VS D, Body Diode F orward V olta ge (V )

F igure 8. B ody Diode Forward Voltage

Variation with S ource C urrent

300
200

100

10

ID, Dra in C urrent (A )

1

0.5

0.1 1 10 30 60

it

m

)L i

N

(O

DS

R

V

G S

=10V

S ingle P ulse

Tc=25 C

VDS , Drain-S ource V oltage (V )

1

0

0

μs

1ms

10

m

s

10

0ms

DC

F igure 10. Maximum S afe
O perating Area

4

S DP /B60N03L

DD

V

on

t

d(off)

t

r

t

90%

10% 10%

INVE R TE D

50% 50%

V

V

t

d(on)

OU T

IN

10%

R

IN

V

V

G S

G EN

R

G

L

D

OU T

V

S

P ULS E W IDT H

F igure 11. S witching T est C ircuit

2

1

D=0. 5

0. 2

0. 1

0. 1

0. 05

0. 02

r(t), Norma lized Effective

0. 01

T rans ient Thermal Impedance

0. 01

S ingle P ulse

0. 01 0. 1 1 10 100 100 0 1000 0

F igure 12. S witching W aveforms

DM

P

1

t

1. R θJC (t)=r (t) * R θJ C

2. R θJC =S ee D atas heet

3. TJ M-T C = P* R θJC (t)

4. Duty C ycle , D=t1/t2

S quare Wave P ulse Duration (ms ec)

4

t

off

f

t

90%

90%

2

t

F igure 13. Norma lized T hermal T rans ient Impedance C urve

5