Datasheet SDB55N02, SDP55N02 Datasheet (SamHop Microelectronics)

S DP /B 55N02

S amHop Microelectronics C orp.

Augus t , 2002

N-C hannel E nhancement Mode F ield E ffect T ransis tor

4

PR ODUC T S UMMAR Y

VDS S

20V

ID

55A

D

G

S

S DB S E RIE S
TO-2 63(DD-PAK)

R DS (on) ( m

14 @ VGS = 4. 5V

W

) T YP

G

D

S

S DP S E RIE S
TO-2 20

F E ATUR E S

S uper high dense cell design for extremely low R DS (ON).

High power and current handling capability.

TO-220 & TO-263 package.

D

G

S

ABS OLUTE MAX IMUM R ATING S (TC =25 C unless otherwise noted)

P arameter

Drain-S ource Voltage

G ate-S ource Voltage

Drain C urrent-C ontinuous @ TJ =125 C

-P ulsed

a

Drain-S ource Diode Forward C urrent

Maximum P ower Dissipation

@ T c=25 C

Derate above 25 C

Operating and S torage

Temperature R ange

S ymbol

V

DS

V

G S

I

D

I

DM

I

S

P

D

TJ, T

S TG

Limit Unit

20

12

55

165

55

75

0.5

-65 to 175

THE R MAL C HAR AC TE R IS TIC S

Thermal R es is tance, J unction-to-C a s e

Thermal R es is tance, J unction-to-Ambient

R

R

J C

J A

2

62.5

V

V

A

A

A

W

W / C

C

C

/W

C

/W

1

S DP /B 55N02

E LE C T R IC AL C H AR AC T E R IS T IC S (T C 25 C unles s otherwis e noted)

P arameter

S ymbol

=

C ondition

Min

Typ

C

OF F CHAR ACT E R IS T IC S

Drain-S ource B reakdown Volta ge

Zero G ate Voltage Drain Current

G a te-Body Leakage

ON C HAR AC TE R IS TIC S

a

G a te T hres hold Voltage

Drain-S ource On-S tate R es istance

On-S ta te Drain C urrent

0V, ID 250uA

B V

DS S

I

DS S

I

G S S

V

G S (th)

R

DS (ON)

I

D(ON)

g

F S

b

VDS 16V, V

V

G S

V

DS VG S

V

G S =

V

DS

V

DS =

=

=

G S

= =

=

=

0V

8V, VDS 0V

=

, ID = 250uA

4.5V, ID = 21A

= 10V, V

G S

= 10V

10V, ID = 26A

20

0.9 1.5

55

1

14

53

V

G S

DYNAMIC C HAR AC TE R IS TICS

Max

10

100

19

4

Unit

V

uA

nA

V

m ohm

A

SF orward Transconductance

Input C apacitance

Output C apacitance

R evers e Transfer C apacitance

S WIT C HING C HAR AC T E R IS TIC S

Turn-O n Delay Time

R ise Time

Turn-O ff Delay Time

F all Time

Total G ate Charge

G a te-S ource C harge

G a te-Drain C harge

P

C

IS S

V

DS

=15V, V

C

OS S

C

R S S

b

t

D(ON)

t

r

t

D(OFF)

t

f

Q

g

f =1.0MH

VDD = 10V,
ID = 1A,
V

G S

= 10V

R

G E N

= 6

G S

Z

ohm

= 0V

1100

600

180

50 ns

62.5

200

89

18.2

25

F

P

F

P

F

ns

ns

ns

nC

VDS =10V, ID = 30A,

Q

Q

gs

gd

V

G S

=4.5V

2

5.3

2.2

nC

nC

S DP /B 55N02

E LE C T R IC AL C H AR AC T E R IS T IC S (TC=25 C unless otherwis e noted)

4

Typ

P arameter

S ymbol

C ondition

Min

Max

Unit

DR AIN-S O UR C E DIODE C HAR AC T E R IS T IC S

Diode F orward Voltage

Notes

a.Puls e Tes t:P ulse W idth 300us, Duty C ycle 2% .
b.Guaranteed by des ign, not s ubject to production tes ting.

80

70

60

50

40

30

20

ID, Drain C urrent(A)

10

0

0 0 .5 1. 0 1. 5 2. 0 2. 5 3 .0

VDS , Drain-to-S ource Volta ge (V)

F igure 1. O utput C haracteristics

VGS =10, 9,8, 7,6, 5,4 V

V

S D

VGS =3V

a

V

G S

= 0V, Is =26A

75

60

45

30

15

ID, Dra in C urrent (A)

1.3

0.9

-55 C

25 C

T J=125 C

0

0 1 2 3 4 5

VGS , G ate-to-S ource Volta ge (V )

F igure 2. Trans fer C haracteris tics

V

6

300 0

250 0

200 0

150 0

100 0

500

C , C apa citanc e (pF)

0

0 105 15 20 25 30

VDS , Drain-to S ource V olta ge (V)

C iss

C oss

C rss

F igure 3. C apacitance

1.60
ID=26A

V

G S

1.40

1.20

1.00

0.80

0.60

R DS (O N), Norma lized

Dra in-S ource O n-R es istanc e

0.40

=10V

-50 -25 0 25 50 75 100 125 150

Tj, J unction T emperature ( C)

F igure 4. O n-R esis tance Variation

Temperature

with

3

S DP /B 55N02

1.10

VDS=V

1.05

1.00

0.95

0.90

0.85

Vth, Norma lized

0.80

G ate-Source T hres hold V oltage

0.75

-50 -25 0 25 50 75 100 125 1 50

Tj, J unction T emperature ( C)

G S

ID=250uA

1.06

ID=250uA

1.04

4

1.02

1.00

0.98

0.96

B VDS S, N ormalized

0.94

Dra in-S ource Breakdown V oltage

-50 -25 0 25 5 0 75 100 125 150

Tj, J unction T emperature ( C)

F igure 6. B reakdown V oltage V ariation F igure 5. G ate Thres hold Variation

with T empera ture

50

40

30

20

10

gFS , T rans conductanc e (S )

0

0 10 20 30 40

VDS=10V

Is , S ource-dra in current (A)

with T empera ture

50

10

1.0

0.1

0.4 0 .6 0.8 1.0 1.2 1.4

IDS , Drain-S ource C urrent (A)

F igure 7. T rans conductance Variation

with Drain C urrent

10

VDS=10V

8

ID=30A

6

4

2

VGS , G ate to S ource Volta ge (V )

0

0 3 6 9 1512 18 2 1 24

Qg, T otal Gate Charge (nC )

F igure 9. G ate C harge

VS D, Body Diode F orward V olta ge (V)

F igure 8. B ody Diode Forward Voltage

Variation with S ource C urrent

300
200

100

(O N)Limit

DS

R

10

V

G S

=10V

0.5

1

0.1

S ingle P ulse

Tc=25 C

1 10 30 6 0

VDS , Drain-S ource V oltage (V )

ID, Dra in C urrent (A )

DC

100 μs

10ms

100 ms

F igure 10. Maximum S afe
O perating Area

4

1ms

S DP /B 55N02

4

IN

V

V

G S

G EN

R

G

DD

V

on

t

d(off)

t

r

t

90%

INVE R TE D

10% 10%

50% 50%

V

V

d(on)

t

OU T

IN

10%

R

L

D

OU T

V

S

90%

t

off

f

t

90%

P ULS E W IDT H

F igure 11. S witching T est C ircuit

2

1

D=0. 5

0. 2

0. 1

0. 1

0. 05

0. 02

r(t), Norma lized Effective

0. 01

T rans ient Thermal Impedance

0. 01

S ingle P ulse

0. 01 0. 1 1 10 100 100 0 100 00

F igure 12. S witching W aveforms

DM

P

1

t

2

t

1. R θJC (t)=r (t) * R θJ C

2. R θJC =S ee D atas heet

3. TJ M-T C = P* R θJC (t)

4. Duty C ycle , D=t1/t2

S quare Wave P ulse Duration (ms ec)

F igure 13. Norma lized T hermal T rans ient Impedance C urve

5