Page 1
固电半导体
INCHANGE SEMICONDUTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD880
DESCRIPTION ·
·With
·Complement to type 2SB834
·Low collector saturation voltage
APPLICATIONS
·Designed for use in audio frequency
PINNING
TO-220C package
power amplifier applications
PIN DESCRIPTION
1
2
3 Emitter
Base
Collector;connected to
mounting base
Absolute maximum ratings(Ta=25℃)
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
CBO
V
CEO
V
EBO
IC Collector current 3 A
ICM Collector current-Peak 6 A
IB Base current 0.5 A
PC Collector dissipation TC=25℃ 30 W
Tj Junction temperature 150 ℃
Collector-base voltage Open emitter 60 V
Collector-emitter voltage Open base 60 V
Emitter-base voltage Open collector 7 V
T
Storage temperature -50~150 ℃
stg
THERMAL CHARACTERISTICS
SYMBOL CHARACTERISTICS MAX UNIT
Rθjc Thermal resistance junction to case 4.16 ℃/W
Page 2
固电半导体
INCHANGE SEMICONDUTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD880
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)CEO
V
(BR)EBO
V
CEsat
V
BE
I
CBO
I
EBO
hFE DC current gai n IC=0.5A ; VCE=5V 60 300
fT Transition frequency IC=0.5A ; VCE=5V;f=1MHz 3 MHz
Switching times
ton Turn-on time 1.2
ts Storage time 2.0
tf Fall time
Collector-emitter breakdown voltage IC=50mA ;IB=0 60 V
Emitter-base breakdown voltage IE=1mA ;IC=0 7 V
Collector-emitter saturation voltage IC=3A; IB=0.3A 1.0 V
Base-emitter on voltage IC=0.5A ; VCE=5V 1.0 V
Collector cut-off current VCB=60V; IE=0 100
Emitter cut-off current VEB=7V; IC=0 100
=10IB1=-10IB2=2A
I
C
V
=30V
CC
PW=30μs
1.1
μA
μA
μs
μs
μs
hFE Classifications
O Y GR
60-120 100-200 150-300
2
Page 3
固电半导体
INCHANGE SEMICONDUTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD880
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance:±0.10mm)
3
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