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Bulletin I2074/B
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SD823C..C SERIES
FAST RECOVERY DIODES
Features
High power FAST recovery diode series
2.0 to 3.0 µs recovery time
High voltage ratings up to 2500V
High current capability
Optimized turn on and turn off characteristics
Low forward recovery
Fast and soft reverse recovery
Press-puk encapsulation
Hockey Puk version case style B-43
Maximum junction temperature 150°C
Typical Applications
Snubber diode for GTO
High voltage free-wheeling diode
Fast recovery rectifier applications
Major Ratings and Characteristics
Parameters Units
I
F(AV)
@ T
hs
I
F(RMS)
I
FSM
@ 50Hz 9300 9600 A
@ 60Hz 9730 10050 A
SD823C..C
S20 S30
810 910 A
55 55 °C
1500 1690 A
Hockey Puk Version
810A
910A
case style B-43
V
RRM
t
rr
T
J
range 1200 to 2500 1200 to 2500 V
2.0 3.0 µs
@ T
J
25 25 °C
- 40 to 150 °C
D-715
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SD823C..C Series
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ELECTRICAL SPECIFICATIONS
Voltage Ratings
Voltage V
Type number Code peak reverse voltage repetitive peak rev. voltage
12 1200 1300
SD823C..C 50
16 1600 1700
20 2000 2100
25 2500 2600
Forward Conduction
Parameter Units Conditions
I
Max. average forward current 810 (425) 910 (470) A 180° conduction, half sine wave
F(AV)
@ heatsink temperature 55 (85) 55 (85) °C Double side (single side) cooled
I
Max. RMS forward current 1500 1690 A @ 25°C heatsink temperature double side cooled
F(RMS)
I
Max. peak, one-cycle forward, 9300 9600 t = 10ms No voltage
FSM
non-repetitive surge current 9730 10050 t = 8.3ms reapplied
2
I
t Maximum I2t for fusing 432 460 t = 10ms No voltage Initial TJ = TJ max.
2
I
√ t Maximum I 2√ t for fusing 4320 4600 KA 2√ s t = 0.1 to 10ms, no voltage reapplied
V
Low level value of threshold
F(TO)1
voltage
V
High level value of threshold
F(TO)2
voltage
r
Low level value of forward
1
f
slope resistance
r
High level value of forward
2
f
slope resistance
V
Max. forward voltage drop 2.20 1.85 V Ipk= 1500A, TJ = TJ max, tp = 10ms sinusoidal wave
FM
, maximum repetitive V
RRM
, maximum non- I
RSM
V V mA
SD823C..C
S20 S30
7820 8070 t = 10ms 100% V
8190 8450 t = 8.3ms reapplied Sinusoidal half wave,
395 420 t = 8.3ms reapplied
306 326 t = 10ms 100% V
279 297 t = 8.3ms reapplied
1.00 0.95 (16.7% x π x I
1.11 1.06 (I > π x I
0.80 0.60 (16.7% x π x I
0.76 0.57 (I > π x I
A
KA2s
V
mΩ
F(AV)
),TJ = TJ max.
F(AV)
F(AV)
),TJ = TJ max.
F(AV)
RRM
RRM
< I < π x I
< I < π x I
F(AV)
F(AV)
@ TJ = TJ max.
), TJ = TJ max.
), TJ = TJ max.
RRM
max.
Recovery Characteristics
Code
S20 2.0 1000 50 - 50 3.5 240 110
S30 3.0 1000 50 - 50 5.0 380 130
T
= 25 oC
J
Typical t
@ 25% I
rr
RRM
Test conditions Max. values @ T
I
pk
Square Pulse @ 25% I
di/dt V
r
t
rr
RRM
(µ s) (A) (A/µ s) (V) (µ s) (µ C) (A)
D-716
= 150 °C
J
QrrI
rr
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SD823C..C Series
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Fig. 3 - Current Ratings Characteristics
Fig. 5 - Current Ratings Characteristics Fig. 6 - Current Ratings Characteristics
Fig. 4 - Current Ratings Characteristics
Fig. 7 - Current Ratings Characteristics Fig. 8 - Current Ratings Characteristics
D-719
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SD823C..C Series
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Fig. 9 - Forward Power Loss Characteristics
Fig. 11 - Forward Power Loss Characteristics
Fig. 10 - Forward Power Loss Characteristics
Fig. 12 - Forward Power Loss Characteristics
Fig. 13 - Maximum Non-repetitive Surge Current Fig. 14 - Maximum Non-repetitive Surge Current
D-720
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SD823C..C Series
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Fig. 16 - Maximum Non-repetitive Surge Current Fig. 15 - Maximum Non-repetitive Surge Current
Fig. 17 - Forward Voltage Drop Characteristics Fig. 18 - Forward Voltage Drop Characteristics
Fig. 19 - Thermal Impedance Z
D-721
Characteristic
thJ-hs
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SD823C..C Series
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Fig. 20 - Typical Forward Recovery Characteristics Fig. 21 - Typical Forward Recovery Characteristics
Fig. 22 - Recovery Time Characteristics
Fig. 25 - Recovery Time Characteristics
Fig. 23 - Recovery Charge Characteristics
Fig. 26 - Recovery Charge Characteristics Fig. 27 - Recovery Current Characteristics
D-722
Fig. 24 - Recovery Current Characteristics
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Fig. 28 - Maximum Total Energy Loss Per Pulse Characteristics Fig. 29 - Frequency Characteristics
Fig. 30 - Maximum Total Energy Loss Per Pulse Characteristics
Fig. 32 - Maximum Total Energy Loss Per Pulse Characteristics Fig. 33 - Frequency Characteristics
Fig. 31 - Frequency Characteristics
D-723
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Fig. 34 - Maximum Total Energy Loss Per Pulse Characteristics Fig. 35 - Frequency Characteristics
Fig. 36 - Maximum Total Energy Loss Per Pulse Characteristics Fig. 37 - Frequency Characteristics
Fig. 38 - Maximum Total Energy Loss Per Pulse Characteristics Fig. 39 - Frequency Characteristics
D-724
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Thermal and Mechanical Specifications
Parameter Units Conditions
TJMax. junction operating temperature range -40 to 150
T
Max. storage temperature range -40 to 150
stg
R
Max. thermal resistance, case junction 0.076 DCoperation single side cooled
thJ-hs
F Mounting force, ± 10% 9800 N
wt Approximate weight 83 g
Case style B-43 See Outline Table
∆ R
Conduction
thJ-hs
(The following table shows the increment of thermal resistence R
Conduction angle Units Conditions
180° 0.007 0.007 0.005 0.005 TJ = TJ max.
120° 0.008 0.008 0.008 0.008
90° 0.010 0.010 0.011 0.011 K/W
60° 0.015 0.015 0.016 0.016
30° 0.026 0.026 0.026 0.026
Sinusoidal conduction Rectangular conduction
Single Side Double Side Single Side Double Side
SD823C..C
S20 S30
°C
to heatsink 0.038 DCoperation double side cooled
(1000) (Kg)
when devices operate at different conduction angles than DC)
thJ-hs
K/W
Ordering Information Table
1 - Diode
2 - Essential part number
3 - 3 = Fast recovery
4 - C = Ceramic Puk
5 - Voltage code: Code x 100 = V
6 - t
7 - C = Puk Case B-43
code
rr
Device Code
RRM
SD 82 3 C 25 S20 C
4 5 6
1 2
(See Voltage Ratings table)
3
D-717
7
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Outline Table
Conform to JEDEC B-43
All dimensions in millimeters (inches)
3.5 (0.14) DIA. NOM. x
1.8 (0.07) DEEP MIN. BOTH ENDS
0.8(0.03) MIN.
BOTH ENDS
25.3 (1) DIA. MAX.
TWO PLACES
40.5 (1.59) DIA. MAX.
Fig. 1 - Current Ratings Characteristics Fig. 2 - Current Ratings Characteristics
D-718