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Power Transistors INCHANGE
2SD718
Silicon NPN Transistors
B C E
Features:
·With TO-3P(I) package
·Complement to type 2SB688
Absolute Maximum Ratings Tc=25
SYMBOL PARAMETER RATING UNIT
V
V
V
V
P
T
CBO
CEO
CER
EB
I
B
I
C
D
T
j
stg
Collector to base voltage 120 V
Collector to emitter voltage 120 V
Emitter to base voltage
Emitter to base voltage 5 V
Base Current
Collector current-Continuous 8 A
Total Power Dissipation@TC=25 80 W
Junction temperature 150
Storage temperature -65~150
TO-3P(I)
Electrical Characteristics Tc=25
SYMBOL PARAMETER CONDITIONS MIN MAX UNIT
V
CEO(SUS)
V
Collector-Base Voltage
CBO
I
Collector Cutoff Current VCE=120V; IB=0 0.1 mA
CEO
I
Collector Cutoff Current VCB=120V; IE=0 0.1 mA
CBO
I
Emitter Cutoff Current
EBO
V
Emitter Cutoff Current IE=10mA; IC=0 5 V
EBO
V
CE(sat-1)
V
CE(sat-2)
V
CE(sat-3)
V
CE(sat-4)
h
FE-1
h
FE-2
V
BE(sat)
fT Current Gain-Bandwidth Product
Note Hfe Classification
R O
55-110 80-160
Collector-Emitter Sustaining Voltage IC=50mA; IB=0 120 V
Collector-emitter saturation voltages IC=5A; IB=0.5A 2.5 V
Collector-emitter saturation voltages
Collector-emitter saturation voltages
Collector-emitter saturation voltages
Forward current transfer ratio IC=1A; VCE=5V 55 160
Forward current transfer ratio
Base-emitter saturation voltages IC=5A; IB=0.5A 3.0 V
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