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SD60030
RF POWER TRANSISTORS
Designed for GSM / EDGE / IS-97 applications
• EXCELLENT THERMAL STABILITY
• COMMON SOURCE CONFIGURATION
• P
= 30 W with 10 dB gain @ 2000 MHz
OUT
DESCRIPTION
The SD60030 is a common source N-Channel enhancement-mode lateral Field-Effect RF power
transistor designed for broadband commercial and
industrial applications at frequencies up to 2.0 GHz.
The SD60030 is designed f or high gain and broa dband performance operating in common source
mode at 26 V. It is ideal for base station applications
requiring high linearity.
The LdmoST
ORDER CODE
SD60030
FAMILY
TARGET DATA
M243
epoxy sealed
BRANDING
SD60030
PIN CONNECTION
1
3
2
1. Drain
2. Gate
°
= 25
ABSOLUTE MAXIMUM RATINGS (T
Symbol Parameter Value Unit
V
(BR)DSS
V
DGR
V
GS
I
D
P
DISS
Tj Max. Operating Junction Temperature 200 °C
T
STG
THERMAL DATA (T
R
th(j-c)
Drain-Source Voltage 65 V
Drain-Gate Voltage (R
Gate-Source Voltage ± 20 V
Drain Current TBD A
Power Dissipation (@ Tc = 70 °C)
Storage Temperature -65 to +200 °C
= 70 °C)
CASE
Junction -Case Thermal Resistance TBD °C/W
GS
CASE
= 1 MΩ)
C)
65 V
TBD W
3. Source
November, 20 2001
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SD60030
ELECTRICAL SPECIFICATION (T
CASE
= 25 °C)
STATIC
Symbol Test Conditions Min. Typ. Max. Unit
V
(BR)DSS
I
DSS
I
GSS
V
GS(Q)
V
DS(ON)
G
C
ISS
C
OSS
C
RSS
FS
VGS = 0 V IDS = 1 mA
VGS = 0 V VDS = 28 V
VGS = 20 V VDS = 0 V
VDS = 28 V
= 300 mA
ID
VGS = 10 V ID = 3 A
VDS = 10 V ID = 3 A
VGS = 0 V VDS = 28 V f = 1 MHz
VGS = 0 V VDS = 28 V f = 1 MHz
VGS = 0 V VDS = 28 V f = 1 MHz
65 V
1 µA
1 µA
2.5 5.0 V
TBD V
2.0 TBD mho
TBD pF
TBD pF
TBD pF
DYNAMIC
Symbol Test Conditions Min. Typ. Max. Unit
P
out
IMD3
G
PS
η
D
Load
mismatch
note: f1 = 2000 MHz
PEP f
= 2000.1 MHz
2
VDD = 26 V IDQ = 300 mA f = 2000 MHz
VDD = 26 V IDQ = 300 mA P
VDD = 26 V IDQ = 300 mA P
VDD = 26 V IDQ = 300 mA P
= 26 V IDQ = 300 mA P
V
DD
= 30 W PEP
OUT
= 30 W PEP
OUT
= 30 W PEP
OUT
= 30 W f = 2000 MHz
OUT
ALL PHASE ANGLES
30 W
-32 -28 dBc
10 11 dB
35 %
10:1 VSWR
IMPEDANCE DATA
Typical In pu t
Impedance
G
Zin
FREQ. MHz
1800
1850
1900
1950
2000
D
Z
DL
Typical Drain
Load Imped ance
S
Z
(Ω)Z
IN
DL
(Ω)
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M243 (.230 x .360 2L N/HERM W/FLG) MECHANICAL DATA
SD60030
DIM.
A 5.21 5.72 0.205 0.225
B 5.46 6.48 0.215 0.255
C 5.59 6.10 0.220 0.240
D 14.27 0.562
E 20.07 20.57 0.790 0.810
F 8.89 9.40 0.350 0.370
G 0.10 0.15 0.004 0.006
H 3.18 4.45 0.125 0.175
I 1.83 2.24 0.072 0.088
J 1.27 1.78 0.050 0.070
MIN. TYP. MAX MIN. TYP. MAX
mm Inch
Controlling dimension: Inches 1022142E
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SD60030
Information furnished is believed to be accurate an d rel i able. However, STMicroelectro ni cs assumes no responsibility for the con sequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted
by implic ation or otherwise under any patent or patent ri ghts of STM i croelectr onics. Specifications menti oned in thi s publicati on are subject
to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics product s are not
authorized for use as cri tical comp onents in lif e support devi ces or systems without express written approv al of STMicroel ectronics.
The ST log o i s registered trademark of STMicroelectronics
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