Page 1
固电半导体
INCHANGE SEMICONDUTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD525
DESCRIPTION ·
·With TO-220C package
·Complement to type 2SB595
·High breakdown voltage :V
·Low collector saturation volage
: V
=2.0V(Max)
CE(sat)
APPLICATIONS
·Power amplifier applications
·Recommend for 30W high fidelity
audio frequency amplifier output stage
PINNING
=100V
CEO
PIN DESCRIPTION
1
2
3 Emitter
Base
Collector;connected to
mounting base
Absolute maximum ratings(Tc=25℃)
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
CBO
V
CEO
V
EBO
IC Collector current 5 A
IE Emitter current
PC Collector power dissipation
Collector-base voltage Open emitter 100 V
Collector-emitter voltage Open base 100 V
Emitter-base voltage Open collector 5 V
T
=25℃
C
-5 A
40 W
Tj Junction temperature 150
T
Storage temperature -55~150
stg
℃
℃
Page 2
固电半导体
INCHANGE SEMICONDUTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD525
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)CEO
V
(BR)EBO
V
CEsat
VBE Base-emitter voltage IC=1A ; VCE=5V 1.5 V
I
CBO
I
EBO
h
FE-1
h
FE-2
fT Transition frequency IC=1A ; VCE=5V 12 MHz
COB Output capacitance IE=0; VCB=10V;f=1MHz 100 pF
Collector-emitter breakdown voltage IC=50mA; IB=0 100 V
Emitter-base breakdown votage IE=10mA; IC=0 5 V
Collector-emitter saturation voltage IC=4A;IB=0.4 A 2.0 V
Collector cut-off current VCB=100V; IE=0 100 μA
Emitter cut-off current VEB=5V; IC=0 1 mA
DC current gain IC=1A ; VCE=5V 40 240
DC current gain IC=4A ; VCE=5V 20
h
classifications
FE-1
R O Y
40-80 70-140 120-240
2
Page 3
固电半导体
INCHANGE SEMICONDUTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD525
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm)
3
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