RF & MICROWAVE TRANSISTORS
GENERAL PURPOSE L INEAR APPLICATIONS
.GOLD METALLIZATION
.EMITTER SITE BALLASTING
.INTERNAL INPUT MATCHING
.O VERLAY GEOMETRY
.METAL/CERAMIC PACKAGE
.COMMON EMITTER CONFIGURATION
.P
OUT
1.5 W MIN. WITH 9.5 dB GAIN
=
.280 4L S T UD (M122)
ORDER CODE
SD5000
PIN CONNECTION
SD5000
PRELIMINARY DATA
epoxy sealed
BRANDING
S10A015
DESC RIPTION
The SD5000 is a NPN Silicon Transistor designed
for high gain linear performance at 1000 MHz.
This part uses gold metallized die and polysilicon
site ballasting to achieve high reliability and ruggedness.
The SD5000 can be used for applications such
as Telecommunications, Radar, ECM, Space and
other commercial and military systems.
ABSOLUTE MAXIMUM RATINGS (T
Symbol Parameter Value Uni t
V
V
V
P
T
CBO
CES
EBO
I
C
DISS
T
J
STG
Collector-Base Voltage 50 V
Collector-Emitter Voltage 50 V
Emitter-Base Voltage 3.5 V
Device Current 1.0 A
Power Dissipation 7.0 W
Junction Temperature +200
Storage Temperature
case
= 25°C)
1. Collector 3. Base
2. Emitter 4. Emitter
65 to +150
−
°
C
°
C
THERMA L DATA
R
TH(j-c)
November 1992
Junction-Case Thermal Resistance 25 °C/W
1/4
SD5000
ELECTRICAL SPECIFICATIO NS (T
case
= 25°C)
STATIC
Symbol Test Condi tion s
BV
CBOIC
BV
EBOIE
BV
CESIC
BV
CEOIC
I
CBO
h
FE
= 10mA 50 — — V
= 5mA 3.5 — — V
= 10mA 50 — — V
= 5mA 23 — — V
VCB= 28V — 0.2 — mA
VCE= 5V IC= 100mA 18 — 200 —
DYNAMIC
Symb ol Test Co n dit i o ns
P
1dB f = 1 GHz VCC= 20 V I
OUT
G
f = 1 GHz VCC= 20 V I
P
VSWR f = 1 GHz VCC= 20 V I
C
OB
:
f = 1 MHz VCB= 20 V — — 4.0 pF
Value
Min. Typ. Max.
Value
Min. Typ. Max.
220 mA 1.5 — — W
=
C
220 mA 9.5 — — dB
=
C
220 mA — — 25:1 —
C =
Unit
Unit
2/4
IMPEDA NCE D ATA
SD5000
1000 MHz 4.0 + j 3.3 20.8 + j 33.3
TEST CIRCUIT
FREQ. ZIN(Ω)Z
CL
(Ω)
B1, B2 : Ferrite Beads
C1,C2 : 120 pF Chip Capacitor
C3 : .4 - 2.5 pF Johanson Capacitor
C4 : .8 - 8 pF Johanson Capacitor
C5,C6
C7,C8 : 220 pF Chip Capacitor
C9,C10 : 1000 pF Chip Capacitor
C11 : .1µF Capacitor
C12,C13 : 15,000 pF EMI Filter
L1,L2 : 5 Turn Choke; Wire Diameter .025”, I.D. 0.125”
Substrate material: Er=10.2, H=.050”, 1oz. Copper
3/4
SD5000
PACKAGE MECHANICAL DATA
Ref.: Dwg. No. 12-0122
Information furnished is believed to be accurate and reliable.However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringementof patents or other rights of third parties which may results from its use. No
license isgranted by implication orotherwise underany patent or patentrights ofSGS-THOMSON Microelectronics. Specificationsmentioned
in this publication are subject to changewithout notice. Thispublication supersedes andreplaces all information previously supplied.
SGS-THOMSON Microelectronicsproductsare notauthorizedfor use ascriticalcomponentsin life supportdevices orsystems withoutexpress
written approval of SGS-THOMSON Microelectonics.
1994 SGS-THOMSON Microelectronics - All RightsReserved
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Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A
SGS-THOMSON MicroelectronicsGROUP OF COMPANIES
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