Datasheet SD403C..C Series DataSheet (Vishay)

Vishay High Power Products

Fast Recovery Diodes

(Hockey PUK Version), 430 A

FEATURES

• High power FAST recovery diode series

SD403C..C Series

• 1.0 to 1.5 µs recovery time

• High voltage ratings up to 1600 V

• High current capability

• Optimized turn-on and turn-off characteristics

DO-200AA

• Low forward recovery

• Fast and soft reverse recovery

• Press PUK encapsulation

• Case style conform to JEDEC DO-200AA

• Maximum junction temperature 125 °C

PRODUCT SUMMARY

I

F(AV)

430 A

• Lead (Pb)-free

TYPICAL APPLICATIONS

• Snubber diode for GTO

• High voltage freewheeling diode

• Fast recovery rectifier applications

MAJOR RATINGS AND CHARACTERISTICS

PARAMETER TEST CONDITIONS VALUES UNITS

I

F(AV)

I

F(RMS)

I

FSM

2

I

t

V

RRM

t

rr

T

J

T

hs

T

hs

50 Hz 6180

60 Hz 6470

50 Hz 191

60 Hz 175

Range 400 to 1600 V

T

J

430 A

55 °C

675 A

25 °C

1.0 to 1.5 µs

25

- 40 to 125

A

kA2s

°C

RoHS

COMPLIANT

Document Number: 93175 For technical questions, contact: [e-mail]
Revision: 04-Aug-08 1

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SD403C..C Series

Vishay High Power Products

Fast Recovery Diodes

(Hockey PUK Version), 430 A

ELECTRICAL SPECIFICATIONS

VOLTAGE RATINGS

V

, MAXIMUM REPETITIVE PEAK

TYPE NUMBER

VOLTAGE

CODE

RRM

AND OFF-STATE VOLTAGE

V

04 400 500

SD403C..S10C

08 800 900

10 1000 1100

12 1200 1300

SD403C..S15C

14 1400 1500

16 1600 1700

FORWARD CONDUCTION

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum average forward current
at heatsink temperature

Maximum RMS current I

F(RMS)

Maximum peak, one-cycle ,
non-repetitive forward current

Maximum I

Maximum I

2

t for fusing I2t

2

√t for fusing I2√t t = 0.1 to 10 ms, no voltage reapplied 1910 kA2√s

Low level value of threshold voltage V

High level value of threshold voltage V

Low level of forward slope resistance r

High level of forward slope resistance r

Maximum forward voltage drop V

I

F(AV)

I

FSM

F(TO)1

F(TO)2

180° conduction, half sine wave
Double side (single side) cooled

25 °C heatsink temperature double side cooled 675

t = 10 ms

t = 8.3 ms 6470

t = 10 ms

t = 8.3 ms 5445

t = 10 ms

t = 8.3 ms 175

t = 10 ms

t = 8.3 ms 123

(16.7 % x π x I
(I > π x I
(16.7 % x π x I

f1

(I > π x I

f2

Ipk = 1350 A, TJ = 25 °C; tp = 10 ms sinusoidal wave 1.83 V

FM

No voltage
reapplied

100 % V
reapplied

No voltage
reapplied

100 % V
reapplied

F(AV)

), TJ = TJ maximum 1.20

F(AV)

F(AV)

), TJ = TJ maximum 0.70

F(AV)

V

RRM

RRM

< I < π x I

< I < π x I

, MAXIMUM NON-REPETITIVE

RSM

PEAK VOLTAGE

V

Sinusoidal half wave,
initial T

= TJ maximum

J

), TJ = TJ maximum 1.00

F(AV)

), TJ = TJ maximum 0.56

F(AV)

I

MAXIMUM

RRM

= 125 °C

AT T

J

mA

35

430 (210) A

55 (75) °C

6180

5200

191

135

kA

mΩ

A

2

s

V

RECOVERY CHARACTERISTICS

TYPICAL VALUES

AT TJ = 125 °C

RRM

(µs)

Q

(µC)

rr

2.4 52 33

I

(A)

I

FM

rr

t

rr

I

RM(REC)

t

Q

rr

dir

dt

Document Number: 93175

CODE

MAXIMUM VALUE

= 25 °C

AT T

J

AT 25 % I

t

rr

RRM

(µs)

TEST CONDITIONS

I

pk

SQUARE

PULSE

dI/dt

(A/µs)

V

(V)

r

t

AT 25 % I

rr

(A)

S10 1.0

S15 1.5 2.9 90 44

750 25 - 30

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2 Revision: 04-Aug-08

SD403C..C Series

Fast Recovery Diodes

Vishay High Power Products

(Hockey PUK Version), 430 A

THERMAL AND MECHANICAL SPECIFICATIONS

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum operating temperature range T

Maximum storage temperature range T

Maximum thermal resistance,
junction to heatsink

Mounting force, ± 10 % 4900 (500) N (kg)

Approximate weight 70 g

Case style

ΔR

CONDUCTION ANGLE

Note

• The table above shows the increment of thermal resistance R

CONDUCTION

thJ-hs

SINUSOIDAL CONDUCTION RECTANGULAR CONDUCTION

SINGLE SIDE DOUBLE SIDE SINGLE SIDE DOUBLE SIDE

180° 0.010 0.011 0.008 0.008

120° 0.012 0.013 0.013 0.013

90° 0.016 0.016 0.018 0.018

60° 0.024 0.024 0.025 0.025

30° 0.042 0.042 0.042 0.042

R

J

Stg

thJ-hs

DC operation single side cooled 0.16

DC operation double side cooled 0.08

See dimensions - link at the end of
datasheet

when devices operate at different conduction angles than DC

thJ-hs

- 40 to 125

- 40 to 150

DO-200AA

TEST CONDITIONS UNITS

T

= TJ maximum K/W

J

°C

K/W

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SD403C..C Series

Vishay High Power Products

130

120

110

100

90

80

70

0 50 100 150 200 250

Maxim um Allowable Heatsink Tempe rature (°C )

Fig. 1 - Current Ratings Characteristics

130

120

110

100

90

80

70

60

50

0 50 100 150 200 250 300 350

Maximum Allowable Heatsink Temperature (°C)

Fig. 2 - Current Ratings Characteristics

SD 403C ..C Series
(Single Side C oo le d )
R (D C ) = 0.16 K/W

thJ- hs

Conduction Angle

60°

30°

Average Forward Current (A)

SD 403C ..C Serie s
(Single Side Coo led )
R (D C ) = 0 .1 6 K /W

thJ-h s

30°

60°

Average Forward Current (A)

90°

Conduction Period

90°

120°

180°

120°

Fast Recovery Diodes

(Hockey PUK Version), 430 A

180°

Maximum A llow able Heatsink Temperature (°C)

DC

Max imum Av erage Forw ar d Pow er Loss (W )

130

120

110

100

90

80

70

60

50

40

0 100 200 300 400 500 600 700

SD 4 03C ..C Se ries
(Doub le Side Coole d)
R (DC ) = 0.08 K/W

thJ-h s

Conduction Period

90°

60°

30°

Average Forw ard Current (A)

120°

180°

DC

Fig. 4 - Current Ratings Characteristics

800

700

600

500

400

300

200

100

180°
120°

90°
60°
30°

0

0 50 100 150 200 250 300 350 400 450

Average Forward Current (A)

RMS Limit

Conduction Angle

SD403C..C Series
T = 125°C

J

Fig. 5 - Forward Power Loss Characteristics

130

120

110

100

90

80

70

60

50

0 50 100 150 200 250 300 350 400 450

Maxim um Allowable Heatsink Temperature (°C)

SD403C..C Series
(Doub le Side Co oled)
R (DC ) = 0 . 08 K / W

th J-hs

Conduction Angle

30°

60°

90°

Average Forward Current (A)

Fig. 3 - Current Ratings Characteristics

120°

180°

1100

1000

Maximum Average Forward Power Loss (W )

DC

180°

900

120°

800

90°
60°

700

30°

600

RM S Lim it

500

400

300

200

100

0

0 100 20 0 300 4 0 0 500 600 7 00

Average Forw ard Current (A)

Conduction Period

SD40 3C ..C S eries
T = 125°C

J

Fig. 6 - Forward Power Loss Characteristics

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Document Number: 93175

4 Revision: 04-Aug-08

SD403C..C Series

Fast Recovery Diodes

(Hockey PUK Version), 430 A

6000

At Any Rated Load Condition And W ith

R a te d V A p p li e d Fo ll o w in g S u rg e.

5500

5000

4500

4000

3500

3000

2500

Peak Half Sine W ave Forw ard Current (A)

2000

Num ber Of Equal Amplitud e Half Cycle Current Pulses (N)

Fig. 7 - Maximum Non-Repetitive Surge Current

Single and Double Side Cooled

700 0

Maxim um Non Repetitive Surge Current

600 0

500 0

RRM

SD403C..C Series

Versus Pulse Train Duration.

In it i a l T = 1 25 ° C

J

@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s

Initial T = 125°C

J

No Voltage Reapplied
Rated V Reapplied

RRM

Vishay High Power Products

1

SD 403 C..C S erie s

0.1

thJ-h s

Steady State Value

R = 0 . 1 6 K /W

0.01

001011

0.001

Transient Therm al Im ped ance Z (K/W)

0.001 0.01 0.1 1 10 100

Sq ua re W ave P ulse D ura tion (s)

Fig. 10 - Thermal Impedance Z

2.8

2.6

2.4

thJ-hs

(Single Side Coo led )

R = 0 . 0 8 K /W

thJ- hs

(Double Side Cooled)

(D C O p e ra tion)

thJ-hs

SD 4 0 3C ..S10C Se ries
T = 125 °C ; V = 30V

J

r

I = 750 A

FM

Squa re Pulse

Characteristics

400 0

300 0

200 0

SD 403C . .C Se r ies

Peak Half Sine Wave Forward Current (A)

100 0

11.010.0

Pulse Train Duration (s)

Fig. 8 - Maximum Non-Repetitive Surge Current

Single and Double Side Cooled

10000

T = 25 °C

J

T = 125 °C

J

1000

100

Ins tan ta neo u s Fo rw ard Curr ent (A )

10

01234567

Instantan eo us Fo rw ar d V o ltage (V)

SD403C..C Series

Fig. 9 - Forward Voltage Drop Characteristics

2.2

2

1.8

Maximum Re verse Recovery Time - Trr (µs)

1.6

Rate Of Fall Of Forward Current - di/dt (A/µs)

400 A

200 A

00101

Fig. 11 - Recovery Time Characteristics

140

130

120

110

100

90

80

70

60

50

40

30

20

10

0 20406080100

Maximum Reverse Recovery Charge - Qrr (µC)

Rate Of Fall Of Forward C urrent - di/dt (A/µs)

I = 75 0 A

FM

Squa re Pulse

400 A

200 A

SD 40 3C ..S10 C Se rie s
T = 12 5 °C ; V = 30 V

J

r

Fig. 12 - Recovery Charge Characteristics

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Revision: 04-Aug-08 5

SD403C..C Series

Vishay High Power Products

90

I = 750 A

FM

80

Sq ua re P u lse

70

60

50

40

30

20

10

Maximum Reverse Recovery Current - Irr (A)

Rate Of Fall O f Forward Current - di/dt (A/µs)

Fig. 13 - Recovery Current Characteristics

3.5

3

2.5

2

Maximum Reve rse Recovery Time - Trr (µs)

1.5

Rate Of Fall Of Forward Current - di/dt (A/µs)

Fig. 14 - Recovery Time Characteristics

400 A

200 A

SD403C..S10C Series
T = 125 °C ; V = 30V

J

10 20 30 4 0 50 60 70 80 90 100

SD 403C ..S15C Serie s
T = 125 °C; V = 30V

J

r

r

I = 750 A

FM

Sq uare Pulse

400 A

200 A

Fast Recovery Diodes

(Hockey PUK Version), 430 A

Rate Of Fall Of Forward Current - di/dt (A/µs)

Fig. 15 - Recovery Charge Characteristics

00101

Rate Of Fall Of Forward C urrent - di/dt (A/µs)

Fig. 16 - Recovery Current Characteristics

170

160

150

140

130

120

110

100

90

80

70

60

50

0 20406080100

M a xim u m Re verse R e co ve ry C h a rg e - Qrr ( µC )

130

120

110

100

90

80

70

60

50

40

30

20

10

Maximum Reverse Recovery Current - Irr (A)

10 20 30 40 5 0 60 70 80 9 0 100

I = 75 0 A

FM

Sq ua re P u ls e

400 A

200 A

SD40 3C..S15C Serie s
T = 12 5 ° C ; V = 30V

J

I = 750 A

FM

Sq uare P u lse

SD403C..S15C Series
T = 12 5 °C; V = 30V

J

r

400 A

200 A

r

1E4

1

0.4

1E3

1E2

Pe a k F o rw a r d C urre n t (A )

tp

1E1

1E1 1E2 1E3 1E4

0.2

0.1

0.04

0.02

0.01

SD403 C ..S10C Series
Sinu soida l Pul se
T = 12 5°C, V = 80 0V

J

dv/dt = 1000V/µs

RRM

Pulse Basew idth (µs)

4

2

20 jo u le s p e r p ulse

10

20 jo ul e s p er p ul se

10

4

2

1

0.4

0.2

0.1

0.04

SD403C..S10C Series
Trapezoidal Pulse
T = 12 5° C, V = 80 0V

tp

dv/dt = 1000V/µs; d i/dt=50A/µs

RRM

J

1E11E21E31E4

Pulse Basew idth (µs)

Fig. 17 - Maximum Total Energy Loss Per Pulse Characteristics

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Document Number: 93175

6 Revision: 04-Aug-08

SD403C..C Series

(Hockey PUK Version), 430 A

1E4

2

1

0.4

1E3

1E2

Peak Forward Current (A)

tp

1E1

1E1 1 E2 1E3 1E4

0.2

0.1

0.04

0.02

SD4 03..S15C Seri es
Si nus oida l Pu ls e
T = 125°C, V = 1 120 V

J

dv/dt = 1000V/µs

Pulse Ba se w id th (µs)

RRM

ORDERING INFORMATION TABLE

Device code

20 joules per pulse

10

4

Fig. 18 - Maximum Total Energy Per Pulse Characteristics

SD 40 3 C 16 S15 C

Fast Recovery Diodes

1E1 1E2 1E3 1E4

Vishay High Power Products

20 joules per pulse

10

4

2

1

0.4

0.2

0.1

SD403C..S15C Series
Trapezoidal Pulse
T = 125°C, V = 11 20V

tp

dv/dt = 1000V/µs; di/dt=50A/µs

RRM

J

Pulse Basew idth (µs)

51324

1

- Diode

2

- Essential part number

3

- 3 = Fast recovery

4

- C = Ceramic PUK

5

- Voltage code x 100 = V

6

-trr code (see Recovery Characteristics table)

7

- C = PUK case DO-200AA

(see Voltage Ratings table)

RRM

67

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Revision: 04-Aug-08 7

DIMENSIONS in millimeters (inches)

3.5 (0.14) ± 0.1 (0.004) DIA. NOM. x

1.8 (0.07) deep MIN. both ends

Outline Dimensions

Vishay High Power Products

DO-200AA

42 (1.65) DIA. MAX.

19 (0.75) DIA. MAX.

2 places

38 (1.50) DIA. MAX.

Quote between upper and lower pole pieces has to be considered after

application of mounting force (see Thermal and Mechanical Specifications)

0.3 (0.01) MIN.
both ends

14.4 (0.57)

13.7 (0.54)

Document Number: 95248 For technical questions concerning discrete products, contact: [e-mail]
Revision: 06-Nov-07 For technical questions concerning module products, contact: [e-mail]

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1

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All product specifications and data are subject to change without notice.

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(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.

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therein, which apply to these products.

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