Page 1
固电半导体
INCHANGE SEMICONDUTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD313
DESCRIPTION ·
·With
·Complement to type 2SB507
·Low collector saturation voltage
APPLICATIONS
·Designed for the output stage of 15W
PINNING
TO-220C package
to 25W AF power amplifier
PIN DESCRIPTION
1
2
3 Emitter
Base
Collector;connected to
mounting base
Absolute maximum ratings(Ta=25℃)
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
CBO
V
CEO
V
EBO
IC Collector current (DC) 3 A
ICM Collector current-Peak 8 A
IB Base current 1 A
PC Collector dissipation TC=25℃ 30 W
Tj Junction temperature 150 ℃
Collector-base voltage Open emitter 60 V
Collector-emitter voltage Open base 60 V
Emitter-base voltage Open collector 5 V
T
Storage temperature -50~150 ℃
stg
THERMAL CHARACTERISTICS
SYMBOL CHARACTERISTICS MAX UNIT
Rθjc Thermal resistance junction to case 4.16 ℃/W
Page 2
固电半导体
INCHANGE SEMICONDUTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD313
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
CEO
V
CEsat
V
BE
I
CBO
I
CEO
I
EBO
h
FE-1
h
FE-2
fT Transition frequency IC=0.5A ; VCE=5V 5 MHz
Collector-emitter voltage IC=10mA; IB=0 60 V
Collector-emitter saturation voltage IC=2A; IB=0.2A 1.0 V
Base-emitter on voltage IC=1A ; VCE=2V 1.5 V
Collector cut-off current VCB=60V; IE=0 0.1 mA
Collector cut-off current VCE=60V; IB=0 5 mA
Emitter cut-off current VEB=5V; IC=0 1 mA
DC current gain IC=1A ; VCE=2V 40 320
DC current gain IC=0.1A ; VCE=2V 40
h
Classifications
FE-1
C D E F
40-80 60-120 100-200 160-320
2
Page 3
固电半导体
INCHANGE SEMICONDUTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD313
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance:±0.10mm)
3
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