Datasheet SD303C04S20C, SD303C08S10C, SD303C08S20C, SD303C10S10C, SD303C10S15C Datasheet (International Rectifier)
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Bulletin I2066/B
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SD303C..C SERIES
FAST RECOVERY DIODES
Features
High power FAST recovery diode series
1.0 to 2.0 µs recovery time
High voltage ratings up to 2500V
High current capability
Optimized turn on and turn off characteristics
Low forward recovery
Fast and soft reverse recovery
Press-puk encapsulation
Case style conform to JEDEC DO-200AA
Maximum junction temperature 125°C
Typical Applications
Snubber diode for GTO
High voltage free-wheeling diode
Fast recovery rectifier applications
Major Ratings and Characteristics
Parameters SD303C..C Units
I
F(AV)
@ T
hs
I
F(RMS)
@ T
hs
I
FSM
2
I
t @ 50Hz 166 KA2s
@ 50Hz 5770 A
@ 60Hz 6040 A
@ 60Hz 152 KA
350 A
55 °C
550 A
25 °C
Hockey Puk Version
350A
case style DO-200AA
2
s
V
RRM
t
rr
T
J
range 400 to 2500 V
range 1.0 to 2.0 µs
@ T
J
25 °C
- 40 to 125 °C
D-655
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SD303C..C Series
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ELECTRICAL SPECIFICATIONS
Voltage Ratings
Voltage V
Type number Code peak and off-state voltage repetitive peak voltage T
04 400 500
SD303C..S10C 08 800 900
10 1000 1100
12 1200 1300
SD303C..S15C 14 1400 1500
16 1600 1700
SD303C..S20C
20 2000 2100
25 2500 2600
Forward Conduction
Parameter SD303C..C Units Conditions
I
Max. average forward current 350(175) A 180° conduction, half sine wave.
F(AV)
@ Heatsink temperature 55(75) °C Double side (single side) cooled
I
Max. RMS current 550 A @ 25°C heatsink temperature double side cooled
F(RMS)
I
Max. peak, one-cycle 5770 t = 10ms No voltage
FSM
non-repetitive forward current 6040 t = 8.3ms reapplied
2
I
t Maximum I2t for fusing 166 t = 10ms No voltage Initial TJ = TJ max.
2
I
√t Maximum I2√t for fusing 1660 KA2√s t = 0.1 to 10ms, no voltage reapplied
V
Low level of threshold voltage 1.14 (16.7% x π x I
F(TO)1
V
High level of threshold voltage 1.63 (I > π x I
F(TO)
2
r
Low level of forward slope resistance 1.14 (16.7% x π x I
f1
r
High level of forward slope resistance 0.77 (I > π x I
f2
V
Max. forward voltage 2.26 V Ipk= 1100A, TJ = 25°C, tp = 10ms sinusoidal wave
FM
max. repetitive V
RRM
, maximum non- I
RSM
V V mA
4850 t = 10ms 100% V
5080 t = 8.3ms reapplied Sinusoidal half wave,
152 t = 8.3ms reapplied
117 t = 10ms 100% V
107 t = 8.3ms reapplied
A
KA2s
V
mΩ
F(AV)
), TJ = TJ max.
F(AV)
F(AV)
), TJ = TJ max.
F(AV)
RRM
RRM
< I < π x I
< I < π x I
), TJ = TJ max.
F(AV)
), TJ = TJ max.
F(AV)
2222222222222
max.
RRM
= 125°C
J
35
12
Recovery Characteristics
Code
S10 1.0 2.4 52 33
S15 1.5 750 25 -30 2.9 90 44
S20 2.0 3.2 107 46
T
= 25 oC
J
typical t
@ 25% I
rr
RRM
Test conditions Max. values @ T
I
pk
Square Pulse @ 25% I
di/dt V
r
t
rr
RRM
(µs) (A) (A/µs) (V) (µs) (µC) (A)
D-656
= 125 °C
J
QrrI
rr
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SD303C..C Series
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Fig. 3 - Current Ratings Characteristics Fig. 4 - Current Ratings Characteristics
Fig. 7 - Maximum Non-repetitive Surge Current
Single and Double Side Cooled
Fig. 6 - Forward Power Loss CharacteristicsFig. 5 - Forward Power Loss Characteristics
Fig. 8 - Maximum Non-repetitive Surge Current
Single and Double Side Cooled
D-659
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Fig. 9 - Forward Voltage Drop Characteristics
Fig. 11 - Typical Forward Recovery Characteristics
Fig. 10 - Thermal Impedance Z
Characteristic
thJ-hs
Fig. 12 - Recovery Time Characteristics Fig. 13 - Recovery Charge Characteristics Fig. 14 - Recovery Current Characteristics
D-660
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Fig. 15 - Recovery Time Characteristics Fig. 17 - Recovery Current Characteristics
Fig. 18 - Recovery Time Characteristics
Fig. 16 - Recovery Charge Characteristics
Fig. 19 - Recovery Charge Characteristics
Fig. 20 - Recovery Current Characteristics
Fig. 21 - Maximum Total Energy Loss Per Pulse Characteristics
D-661
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Fig. 22 - Maximum Total Energy Loss Per Pulse Characteristics
Fig. 23 - Maximum Total Energy Loss Per Pulse Characteristics
D-662
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Thermal and Mechanical Specifications
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Parameter SD303C..C Units Conditions
TJMax. operating temperature range -40 to 125
T
Max. storage temperature range -40 to 150
stg
R
Max. thermal resistance, 0.16 DC operation single side cooled
thJ-hs
junction to heatsink 0.08 DC operation double side cooled
F Mounting force, ± 10% 4900 N
(500) (Kg)
wt Approximate weight 70 g
Case style DO-200AA See Outline Table
Conduction
∆R
thJ-hs
(The following table shows the increment of thermal resistence R
Conduction angle Units Conditions
180° 0.010 0.011 0.008 0.008
120° 0.012 0.013 0.013 0.013
90° 0.016 0.016 0.018 0.018 K/W T
60° 0.024 0.024 0.025 0.025
30° 0.042 0.042 0.042 0.042
Sinusoidal conduction Rectangular conduction
Single Side Double Side Single Side Double Side
°C
K/W
when devices operate at different conduction angles than DC)
thJ-hs
J
SD303C..C Series
23
= TJ max.
Ordering Information Table
Device Code
1 - Diode
2 - Essential part number
3 - 3 = Fast recovery
4 - C = Ceramic Puk
5 - Voltage code: Code x 100 = V
6 - t
7 - C = Puk Case DO-200AA
code (see Recovery Characteristics table)
rr
SD 30 3 C 25 S20 C
3
(see Voltage Ratings table)
RRM
51 2
4
D-6573333
7
6
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SD303C..C Series
4 2 (1.6 5 ) D IA . M A X .
1 4.4 (0 .5 7 )
13.7 (0.54 )
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Outline Table
3.5(0.14) ± 0.1(0.004) DIA. NOM.x
1.8 (0.07) DEEP MIN. BOTH ENDS
19(0.75) DIA. MAX.
38 (1.50) DIA. MAX.
TWO PLACES
12
0.3 (0.01) MIN.
BOTH ENDS
Case Style DO-200AA
All dimensions in millimeters (inches)
2222222222222
Fig. 1 - Current Ratings Characteristics Fig. 2 - Current Ratings Characteristics
D-658
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