Datasheet SD300C16C Specification

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A-PUK (DO-200AA)

Standard Recovery Diodes,

(Hockey PUK Version), 650 A

PRIMARY CHARACTERISTICS

I

F(AV)

Package A-PUK (DO-200AA)

Circuit configuration Single

650 A

VS-SD300C..C Series

Vishay Semiconductors

FEATURES

• Wide current range

• High voltage ratings up to 3200 V

• High surge current capabilities

• Diffused junction

• Hockey PUK version

• Case style A-PUK (DO-200AA)

• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912

TYPICAL APPLICATIONS

• Converters

• Power supplies

• Machine tool controls

• High power drives

• Medium traction applications

MAJOR RATINGS AND CHARACTERISTICS

PARAMETER TEST CONDITIONS

I

F(AV)

I

F(RMS)

I

FSM

2

t

I

V

RRM

T

J

T

hs

T

hs

50 Hz 6050 6050

60 Hz 6335 6335

50 Hz 183 183

60 Hz 167 167

Range 400 to 2000 2500 to 3200 V

ELECTRICAL SPECIFICATIONS

VOLTAGE RATINGS

, MAXIMUM REPETITIVE PEAK

V

TYPE NUMBER

VS-SD300C..C

VOLTAGE

CODE

04 400 500

08 800 900

12 1200 1300

16 1600 1700

20 2000 2100

25 2500 2600

28 2800 2900

32 3200 3300

RRM

REVERSE VOLTAGE

V

SD300C..C

04 to 20 25 to 32

650 540 A

55 55 °C

1150 995 A

25 25 °C

-40 to +180 -40 to +150 °C

, MAXIMUM

V

NON-REPETITIVE PEAK REVERSE

RSM

VOLTAGE

V

UNITS

kA2s

I

MAXIMUM

RRM

AT T

= TJ MAXIMUM

J

mA

A

15

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FORWARD CONDUCTION

PARAMETER SYMBOL TEST CONDITIONS

Maximum average forward current 
at heatsink temperature

Maximum RMS forward current I

Maximum peak, one-cycle forward, 
non-repetitive surge current

Maximum I

Maximum I

2

t for fusing I2t

2

t for fusing I2t t = 0.1 to 10 ms, no voltage reapplied 1830 1830 kA2s

Low level value of threshold voltage V

High level value of threshold voltage V
Low level values of forward 

slope resistance
High level values of forward 

slope resistance

Maximum forward voltage drop V

I

F(AV)

F(RMS)

I

FSM

F(TO)1

F(TO)2

r

r

180° conduction, half sine wave
Double side (single side) cooled

25 °C heatsink temperature double side cooled 1150 995

t = 10 ms

t = 8.3 ms 6335 6335

t = 10 ms

t = 8.3 ms 5330 5330

t = 10 ms

t = 8.3 ms 167 167

t = 10 ms

t = 8.3 ms 118 118

(16.7 % x  x I
(I >  x I

(16.7 % x  x I

f1

(I >  x I

f2

Ipk = 1500 A, TJ = TJ maximum; 

FM

t

= 10 ms sinusoidal wave

p

No voltage
reapplied

100 % V
reapplied

No voltage



RRM

Sinusoidal half wave,
initial T

reapplied

100 % V
reapplied

F(AV)

), TJ = TJ maximum 1.00 1.00

F(AV)

F(AV)

), TJ = TJ maximum 0.72 0.72

F(AV)



RRM

< I <  x I

< I <  x I

), TJ = TJ maximum 0.95 0.95

F(AV)

), TJ = TJ maximum 0.75 0.75

F(AV)

VS-SD300C..C Series

Vishay Semiconductors

SD300C..C

04 to 20 25 to 32

650 (380) 540 (250) A

55 (85) 55 (85) °C

6050 6050

5090 5090

= TJ maximum

J

183 183

129 129

2.08 2.08 V

UNITS

A

2

kA

V

mW

s

THERMAL AND MECHANICAL SPECIFICATIONS

PARAMETER SYMBOL TEST CONDITIONS

Maximum operating temperature range T

Maximum storage temperature range T
Maximum thermal resistance,

junction to heatsink

R

J

Stg

thJ-hs

DC operation single side cooled 0.163

DC operation double side cooled 0.073

Mounting force, ± 10 % 4900 (500) N (kg)

Approximate weight 70 g

Case style See dimensions - link at the end of datasheet A-PUK (DO-200AA)

R

CONDUCTION ANGLE

CONDUCTION

thJ-hs

SINUSOIDAL CONDUCTION RECTANGULAR CONDUCTION

SINGLE SIDE DOUBLE SIDE SINGLE SIDE DOUBLE SIDE

180° 0.017 0.017 0.011 0.012

120° 0.020 0.020 0.020 0.020

90° 0.025 0.025 0.027 0.027

60° 0.036 0.036 0.038 0.038

30° 0.064 0.062 0.065 0.062

Note

• The table above shows the increment of thermal resistance R

when devices operate at different conduction angles than DC

thJ-hs

SD300C..C

04 to 20 25 to 32

UNITS

-40 to 180 -40 to 150

-55 to 200

TEST CONDITIONS UNITS

T

= TJ maximum K/W

J

°C

K/W

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40

60

80

100

120

140

160

180

0 50 100 1 5 0 200 250 300 350 4 00 450

30°

60°

90°

120°

180°

Average Forward Current (A)

Maximum Allowable Heatsink Temperature (°C)

Conduction Angle

(Single Side C ooled)

R (D C ) = 0.163 K /W

th J-hs

SD30 0C ..C Series (40 0V to 2000V )

20

40

60

80

100

120

140

160

180

0 20 0 400 600 800 1000 120 0

30°

60°

90°

180°

DC

120°

Average Forw ard C urrent (A)

Maximum Allowable Heatsink Temperature (°C)

Conduction Period

(Dou ble Sid e C oo led)

R ( D C) = 0 .0 7 3 K /W

thJ-h s

SD300C..C Series (400V to 2000V)

20

30

40

50

60

70

80

90

100

110

120

130

140

150

0 100 200 300 400 500 600

30°

60°

90°

180°

DC

120°

Average Forward Current (A)

Maximum Allowable Heatsink Temperature (°C)

Cond uction Period

SD300C. .C Series (2500V to 320 0V )

(Single Side Cooled)

R (D C ) = 0 .16 3 K / W

th J-hs

VS-SD300C..C Series

Vishay Semiconductors

Fig. 1 - Current Ratings Characteristics

180

160

140

120

100

80

60

40

20

0 100 2 0 0 3 00 400 5 0 0 60 0 70 0

Maximum Allowable Heatsink Temperature (°C)

Fig. 2 - Current Ratings Characteristics

180

160

140

120

100

80

60

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40

20

0200400600800

Maximum Allowable Heatsink Temperature (°C)

Fig. 3 - Current Ratings Characteristics

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Fig. 4 - Current Ratings Characteristics

SD30 0C ..C Series (400V to 2000 V)

30°

Average Forward Curren t (A)

(Single Side C ooled)

R ( D C ) = 0 .1 6 3 K / W

thJ-h s

Conduction Period

60°

90°

120°

180°

DC

150

140

130

120

110

100

90

80

70

60

50

40

Maximum Allowable Heatsink Temperature (°C)

SD300C. .C Series (2500V to 320 0V)

0 50 100 150 200 250 300 350 400

Average Forward Current (A)

Fig. 5 - Current Ratings Characteristics

SD300C. .C Ser ies (400V to 2000V )

Ave rage F orward Current (A )

(Double Side Cooled)

R (DC ) = 0.0 7 3 K /W

thJ-h s

Con duc tion An gle

30°

60°

90°

120°

180°

Fig. 6 - Current Ratings Characteristics

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(Single Side Cooled)

R (DC) = 0.163 K/W

thJ- hs

Con duc tion A ngle

30°

60°

90°

120°

Document Number: 93544

180°

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0

500

1000

1500

2000

2500

0 200 400 600 800 1000 1200

DC
180°
120°

90°

60°

30°

RMS Lim it

Conduction Period

Maxim um Average Forw ard Pow er Loss (W )

Average Forw ard Current (A)

SD300C..C Series
T = T m ax .

J

J

1500

2000

2500

3000

3500

4000

4500

5000

5500

6000

001011

Num ber Of Equal A mplitude Ha lf Cycle Current Pulses (N)

Peak Half Sine W ave Forw ard Current (A)

SD 300 C..C S erie s

Init ia l T = T m a x.

@ 60 H z 0.0083 s
@ 50 H z 0.0100 s

JJ

At Any Rated Load Condition And With

Ra te d V A p p lied Fo llow ing Su rg e .

RRM

1000

2000

3000

4000

5000

6000

7000

0.01 0.1 1

Pulse Train Duration (s)

P e a k H a lf Sin e W a ve F o r w a r d C ur r e n t ( A )

V e rs u s P u ls e T ra in D ur a t io n .

M a x im u m N on Rep e t itive Surg e C u rre nt

SD 300C ..C Serie s

In it ia l T = T m a x .

N o V o lt a g e R e a p p l ie d
Ra ted V Re applie d

RRM

J

J

VS-SD300C..C Series

Vishay Semiconductors

150

140
130
120
110

100

90
80

70
60
50
40

30
20

Maximum Allowable Heatsin k Temperature (°C)

SD300C..C Series (2 500V to 3200V)

0 10 0 20 0 300 40 0 500 60 0 70 0

Ave rage F orward Current ( A)

(Double Side Cooled)

R (DC ) = 0 .073 K/W

th J-h s

Conduction Angle

30°

60°

90°

120°

Fig. 7 - Current Ratings Characteristics

150

140
130
120

110
100

90
80
70

60
50
40

30
20

Maxim um Allowable Heatsink Temperature (°C)

SD30 0C ..C Serie s (2500V to 320 0V)

30°

0 200 400 600 800 1000

Average Forw ard Current (A)

(Dou ble Side C o oled)

R (D C ) = 0.073 K/W

th J-hs

Conduction Period

60°

90°

120°

180°

Fig. 8 - Current Ratings Characteristics

180°

Fig. 10 - Forward Power Loss Characteristics

DC

Fig. 11 - Maximum Non-Repetitive Surge Current

Single and Double Side Cooled

180 0

180°

160 0

120°

140 0

120 0

100 0

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Maximum Average Forward Power Loss (W)

Fig. 9 - Forward Power Loss Characteristics

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90°
60°
30°

800

600

400

200

0

0200400600800

Aver a ge Forwa rd C u rren t (A )

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RMS Lim it

Cond uction Angle

SD300C..C Series
T = T m ax.

J J

Fig. 12 - Maximum Non-Repetitive Surge Current

Single and Double Side Cooled

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100

1000

10000

0.5 1 1.5 2 2.5 3 3. 5 4 4.5 5

T = 25°C

J

Instant aneous Forw ard Current (A)

T = T m ax.

J

Instanta ne ous F orwa rd Voltag e (V)

SD300C..C Series

J

0.001

0.01

0.1

1

0111.010.0100.0

Sq uare W ave Pulse Dura tion ( s)

th J -hs

Transien t Therm a l Im p ed a nc e Z (K /W )

Stea d y St ate Va lue

R = 0.163 K/W

(Single Side C ooled)

R = 0.073 K/W

(Dou ble Sid e Coo led)

(D C O pera tion)

thJ-h s

thJ-h s

SD 3 0 0C ..C Se ries

1

- Diode

- Vishay Semiconductors product

2

- Essential part number

3

- 0 = standard recovery

4

- C = ceramic PUK

5

- Voltage code x 100 = V

RRM

(see Voltage Ratings table)

6

7

- C = PUK case A-PUK (DO-200AA)

Device code

51 32 4 6 7

VS- SD 30 0 C 32 C

VS-SD300C..C Series

Vishay Semiconductors

Fig. 13 - Forward Voltage Drop Characteristics

ORDERING INFORMATION TABLE

Dimensions www.vishay.com/doc?95248

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Fig. 14 - Thermal Impedance Z

LINKS TO RELATED DOCUMENTS

Characteristics

thJC

5

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DIMENSIONS in millimeters (inches)

3.5 (0.14) ± 0.1 (0.004) DIA. NOM. x

1.8 (0.07) deep MIN. both ends

Outline Dimensions

Vishay Semiconductors

DO-200AA

42 (1.65) DIA. MAX.

19 (0.75) DIA. MAX.

2 places

C

A

38 (1.50) DIA. MAX.

Quote between upper and lower pole pieces has to be considered after

application of mounting force (see Thermal and Mechanical Specifications)

0.3 (0.01) MIN.
both ends

13.7 (0.54)

14.4 (0.57)

Note:

A = Anode
C = Cathode

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