Datasheet SD2933 Datasheet (SGS Thomson Microelectronics)

Page 1
HF/VHF/UHF N-CHANNEL MOSFETs
GOLD METALLIZATION
EXCELLENT THERMAL STABILITY
COMMON SOURCE CONFIGURATION
P
THERMALLY ENHANCED PACKAGING
DESCRIPTION
The SD2933 is a gold metallized N-Channel MOS field-effect RF power transistor. It is intended for use in 50 V DC large signal applications up to 150 MHz
= 300 W MIN. WITH 20 dB GAIN @ 30
OUT
MHz
SD2933
RF POWER TRANSISTORS
ADVANCE DATA
M177
epoxy sealed
SD2933
PIN CONNECTION
BRANDING
SD2933
1. Drain
2. Source
3. Gate
ABSOLUTE MAXIMUM RATINGS(T
Symbol Parameter Value Unit
V
(BR)DSS
V
DGR
V
I
P
DISS
T
T
STG
GS
D
Drain Source Volatage 125 V Drain-Gate Voltage (RGS=1MΩ) Gate-Source Voltage ±20 V Drain Current 40 A Power Dissipation 648 W
Max. Operating Junction Temperature 200
j
Storage Temperature -65 to 150
CASE
=250C)
125 V
4. Source
5. Source
THERMAL DATA
R
th(j-c)
R
th(c-s)
* Determined using a flataluminum or copper heatsink with thermal compound apllied (Dow Corning 340 or equivalent).
Jun 2000
Junction-Case Thermal Resistance Case-Heatsink Thermal Resistance*
0.27
0.15
0 0
0
C/W
0
C/W
C C
1/8
Page 2
SD2933
ELECTRICAL SPECIFICATION(T
CASE
=250C)
STATIC
Symbol Parameter Min. Typ. Max. Unit
V
(BR)DSSVGS
I
DSS
I
GSS
V
GS(Q)
V
DS(ON)
g
FS
C
ISS
C
OSS
C
RSS
=0V IDS=200mA VGS=0V VDS=50V VGS=20V VDS=0V VDS=10V ID=250mA VGS=10V ID=10A VDS=10V ID=10A VGS=0V VDS=50V f=1MHz
125 V
10 mA 10 µA
25V
3V
10 mho
1000 pF VGS=0V VDS= 50 V f = 1 MHz 372 pF VGS=0V VDS=50V f=1MHz
29 pF
REF. 7170198B
DYNAMIC
Symbol Parameter Min. Typ. Max. Unit
P
OUT
G
PS
f = 30 MHz VDD=50V IDQ= 250 mA 300 400 W f = 30 MHz VDD=50V P
= 300 W IDQ= 250 mA
OUT
20 23.5 dB
η
Load
Mismatch
f = 30 MHz VDD=50V P
D
f = 30 MHz V All Phase Angles
IMPEDANCE DATA
= 300 W IDQ= 250 mA
OUT
=50V P
DD
Frequency
= 300 W IDQ= 250 mA
OUT
Z
(Ω)Z
IN
DL
(Ω)
30 MHz 1.8 - j 0.2 2.8 + j 2.3 108 MHz 1.9 + j 0.2 1.6 + j 1.4 150 MHz 1.9 + j 0.3 1.5 + j 1.6
50 65 %
3:1 VSWR
2/8
Page 3
TYPICAL PERFORMANCE
Capacitance vs. Drain-Source Voltage
SD2933
Drain Current vs. Gate Voltage
10000
f= 1MHz
1000
100
C, CAPACITANCE(pF)
10
0 1020304050
Vds, DRAIN-SOURCEVOLTAGE (V)
Gate-Source Voltages vs. Case Temperature
1.15
1.1
1.05
1
0.95
0.9 Vdd=10V
0.85
0.8
-25 0 25 50 75 100
Vgs, GATE-SOURCEVOLTAGE (NORMALIZED)
Id=.1A
Id=4 A
Tc, CASETEMPERATURE (ºC)
Id=10 A
Id=7 A
Id=15 A
Id=3 A
Id=2 A
Id=12 A
Id=1 A
Ciss
Coss
Crss
Id=5 A
Id=.25A
15
Vdd= 10V
10
5
Id, DRAIN CURRENT (A)
0
1 1.5 2 2.5 3 3.5 4
Vgs, GATE-SOURCE VOLTAGE (V)
Tc=+25°C
Tc=+80°C
Tc=-20°C
Maximum Thermal Resistance vs. Case Temperature
0.33
0.32
0.31
0.3
0.29
0.28
0.27
Rth(j-c), THERMALRESISTANCE (°C/W)
0.26 25 35 45 55 65 75 85
Tc, CASE TEMPERATURE(°C)
3/8
Page 4
SD2933
TYPICAL PERFORMANCE
Output Power vs. Input Power
Output Power vs. Input Power
400
300
200
100
Pout, OUTPUT POWER (W)
0
0 0.3 0.6 0.9 1.2 1.5 1.8 2.1 2.4 2.7
Pin, INPUT POWER( W)
Power Gain vs. Output Power
26
24
22
20
Gp, POWER GAIN(dB)
18
16
0 100 200 300 400
Pout, OUTPUT POWER (W)
Vdd = 50V
Vdd = 40V
F= 30MHz Idq= 250mA
F= 30 MHz Vdd= 50 V Idq= 250 mA
500
400
300
200
100
Pout,OUTPUTPOWER(W)
0
00.511.522.53
Tc = + 250C
Tc= -200C
Tc = +800C
F=30MHz Vdd= 50V
Idq=250mA
Pin,INPUTPOWER(W)
Drain Efficiency vs. Output Power
80
70
60
50
40
Nd, DRAINEFFICIENCY(%)
30
20
0 100 200 300 400
Pout, OUTPUT POWER (W)
F= 30 MHz Vdd= 50 V Idq= 250 mA
Output Power vs. Supply Voltage
450
400
F= 30 MHz Idq= 250 mA
350
300
250
200
Pout, OUTPUT POWER (W)
150
100
24 26 28 30 32 34 36 38 40 42 44 46 48 50
Pin= 2.6 W
Vdd, SUPPLY VOLTAGE (V)
4/8
Pin= 1.3 W
Pin= 0.65W
Output Power vs. Gate Voltage
500
F= 30 MHz Vdd=50 V
400
300
200
Pout, OUTPUT POWER (W)
100
0
-3 -2 -1 0 1 2 3
Vgs, GATE-SOURCE VOLTAGE (V)
Tc= +25°C
Tc= -20°C
Tc= +80°C
Page 5
30 MHZ TEST CIRCUIT SCHEMATIC
SD2933
REF. 1008706A
30 MHz TEST CIRCUIT COMPONENT PART LIST
5/8
Page 6
SD2933
30 MHZ TEST CIRCUIT PHOTOMASTER
REF. 1008706A
30 MHZ PRODUCTION TEST FIXTURE
6/8
Page 7
M177 (.550 DIA. 4/L N/HERM W/FLG) MECHANICAL DATA
SD2933
DIM.
MIN. TYP. MAX MIN. TYP. MAX
A 5.72 5.97 0.225 0.235 B 6.73 6.96 0.265 0.275 C 21.84 22.10 0.860 0.870 D 28.70 28.96 1.130 1.140 E 13.84 14.10 0.545 0.555 F 0.08 0.18 0.003 0.007 G 2.49 2.74 0.098 0.108 H 3.81 4.32 0.150 0.170
I 7.11 0.280
J 27.43 28.45 1.080 1.120
K 15.88 16.13 0.625 0.635
mm Inch
Controlling Dimension: Inches
1011012D
7/8
Page 8
SD2933
Information furnished is believedtobe accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of useof suchinformationnor for anyinfringementof patents orother rights ofthird partieswhichmay result fromits use.No license isgranted by implicationor otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is registered trademark of STMicroelectronics
2000 STMicroelectronics - All Rights Reserved
All other names are the property of their respective owners.
STMicroelectronics GROUP OF COMPANIES
Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia - Malta - Morocco -
Singapore - Spain- Sweden - Switzerland - United Kingdom - U.S.A.
http://www.st.com
,
8/8
Loading...