The SD2933 is a gold metallized N-Channel MOS
field-effect RF power transistor. It is intended for
use in 50 V DC large signal applications up to 150
MHz
= 300 W MIN. WITH 20 dB GAIN @ 30
OUT
MHz
SD2933
RF POWER TRANSISTORS
ADVANCE DATA
M177
epoxy sealed
ORDER CODE
SD2933
PIN CONNECTION
BRANDING
SD2933
1. Drain
2. Source
3. Gate
ABSOLUTE MAXIMUM RATINGS(T
SymbolParameterValueUnit
V
(BR)DSS
V
DGR
V
I
P
DISS
T
T
STG
GS
D
Drain Source Volatage125V
Drain-Gate Voltage (RGS=1MΩ)
Gate-Source Voltage±20V
Drain Current40A
Power Dissipation648W
Max. Operating Junction Temperature200
j
Storage Temperature-65 to 150
CASE
=250C)
125V
4. Source
5. Source
THERMAL DATA
R
th(j-c)
R
th(c-s)
* Determined using a flataluminum or copper heatsink with thermal compound apllied (Dow Corning 340 or equivalent).
Information furnished is believedtobe accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of useof suchinformationnor for anyinfringementof patents orother rights ofthird partieswhichmay result fromits use.No license isgranted
by implicationor otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject
to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not
authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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2000 STMicroelectronics - All Rights Reserved
All other names are the property of their respective owners.
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