Datasheet SD2932 Datasheet (SGS Thomson Microelectronics)



HF/VHF/UHF N-CHANNEL MOSFETs

ν GOLDMETALLIZATION
ν EXCELLENTTHERMAL STABILITY
ν COMMONSOURCE CONFIGURATION,

PUSH-PULL

ν POUT = 300W MIN. WITH 15 dB GAIN @175

MHz

DESCRIPTION

The SD2932is a gold metallized N-ChannelMOS
field-effect RF power transistor. The SD2932 is
intended for use in 50V dc large signal
applicationsup to 250 MHz

SD2932

RF POWER TRANSISTORS

PRELIMINARY DATA

M244

epoxy sealed

ORDERCODE BRANDING

SD2932 TSD2932

PIN CONNECTION

1. Drain 3. Source

2. Gate

ABSOLUTE MAXIMUM RATINGS (T

Symb o l Parameter Val u e Uni t

V

(BR)DSS

V

V

P

T

Drain Sou r ce Volt age 125 V

DGR Drain-G ate Volt age (R

Gat e- Source Voltag e ±20 V

GS

Drain Current 40 A

I

D

Power Diss ip at ion 500 W

DISS

Max. Oper ating Juncti on T emperatur e +200

T

j

Storage Temperature -65 to 1 50

STG

=1MΩ)

GS

case

=25oC)

125 V

THERMAL DATA

R

th(j-c)

R

th(c-s) Case Heats in k Th erm al Resist ance ∗

∗ Determined using a flat aluminumor copper heatsink with thermal compound applied (Dow Corning 340 or equivalent).

March 2000

Junct ion- Ca se Therm al Resistance 0.35

0.12

o
o

o

C/W

o

C/W

C
C

1/13

SD2932

ELECTRICAL SPECIFICATION (T

case

=25oC)

STATIC (per section)

Symb o l Para met er Mi n . T yp. Max. Unit

V

(BR)DSSVGS

I

DSS

I

GSS

V

GS(Q)

V

DS(on)VGS

gfs V

C

ISS

C

OSS

C

RSS

=0V IDS= 100 mA 125 V
VGS=0V VDS=50V 5 mA
VGS=20V VDS=0V 5 µA
VDS=10V ID=250mA 2 5 V

= 10V ID=10A 3 V

= 10V ID=5A 5 mho

DS

VGS=0V VDS= 50 V f = 1 M Hz 480 pF
VGS=0V VDS= 50 V f = 1 M Hz 190 pF
VGS=0V VDS=50V f=1MHz 18 pF

REF.7163911A

DYNAMIC

Symb o l Para met er Mi n . T yp. Max. Unit

P

OUT

G

η

Load

Mismatch

f = 175 M H z VDD=50V IDQ= 5 00 mA 300 W
f = 175 M H z VDD=50V P

PS

f = 175 M H z VDD=50V P

D

f = 175 M H z V

DD

=50V P

=300W IDQ= 500 mA 15 16 dB

out

=300W IDQ= 500 mA 50 60 %

out

=300W IDQ= 500 mA

out

5:1 VSWR

All Ph ase Angles

IMPEDANCEDATA

Measured Gate to Gate and Drain toDrain, respectively.

FREQ. ZIN(Ω) ZDL(Ω)

175 MHz 0.92 - j 0.14 3.17 + j 4.34

2/13

SD2932

MaximumThermalResistancevsCase
Temperature

0.42

0.4

0.38

Rth(j-c) (ºC/W)

0.36

0.34
25 30 35 40 45 50 55 60 65 70 75 80 85

Tc, Case Temperature (°C)

Capacitancevs Drain-Source Voltage

10000

1000

Ciss

Coss

DC Safe OperatingArea

100

10

(1)

Ids, DRAIN CURRENT (A)

1

1 10 100 1000

Vds, DRAIN SOURCE VOLTAGE (V)

(1) Currentin this areamay belimitedbyRDS(on)
Twosides,each sectionequallyloaded

DrainCurrentvs Gate Voltage

20

Vds=10 V

15

10

T=-20 °C

T=+25 °C

T=+80 °C

100

C, CAPACITANCE (pF)

10

01020304050

VDS, DRAIN-SOURCE VOLTAGE (V)

Gate Voltage vs Case Temperature

1.15

1.1

1.05

1

0.95

0.9

0.85

0.8

VGS, GATE-SOURCE VOLTAGE (NORMALIZED)

-25 0 25 50 75 100

Tcase, CASE TEMPERATURE(°C)

Id=11A

Id=4 A

Id=2 A

Id=10A

Id=.1 A

Id=9 A

Crss

Id=7 A

Id=.25A

5

ID, DRAIN CURRENT (A)

0

2 2.5 3 3.5 4 4.5 5 5.5 6

VGS, GATE-SOURCE VOLTAGE (V)

Id=5 A

Id=1 A

3/13

SD2932

TYPICALPERFORMANCE (175 MHz)

OutputPowervs Input Power

500

400

300

200

100

Pout, OUTPUT POWER (W)

Vdd=50V
Idq=2x 250mA
F=175Mhz

0

0 2 4 6 8 10 12 14 16 18 20 22

Pin, INPUT POWER (W)

Power Gain vs. Output Power

17

16

15

14

13

12

Gp, POWER GAIN (dB)

11

10

0 100 200 300 400 500

Pout, OUTPUT POWER (W)

Vdd=50V
Idq=2x 250mA
F=175Mhz

Vdd=50 V

Vdd=40 V

OutputPowervs Input Power

600

500

400

300

200

Vdd=50V
Idq=2x 250mA
F=175Mhz

Pout, OUTPUT POWER (W)

100

0

0 2 4 6 8 10121416182022

Pin, INPUT POWER(W)

Efficiencyvs. OutputPower

80

70

60

50

40

30

Nc, EFFICIENCY (%)

20

10

0 100 200 300 400 500

Pout, OUTPUT POWER (W)

Vdd=50V
Idq=2 x 250mA
F=175Mhz

T=-20 °C

T=+25 °C

T=+80 °C

OutputPower vs Supply Voltage

450

Idq=2 x 250mA

400

F=175Mhz

350
300
250
200
150

Pout,OUTPUT POWER (W)

100

24 26 28 30 32 34 36 38 40 42 44 46 48 50

Vdd,DRAIN VOLTAGE (V)

4/13

Pin=15.6 W

Pin=7.8 W

Pin=3.9 W

OutputPowervs Gate Voltage

400

300

200

100

Pout, OUTPUT POWER (W)

0

-3 -2 -1 0 1 2 3

VGS, GATE_SOURCE VOLTAGE(V)

T=-20 °C

Vdd=50V
Idq=2x 250mA
F=175Mhz

T=+25 °C

T=+80 °C

175 MHz Test Circuit Schematic(ProductionTest Circuit)

SD2932

REF. 1022256B

5/13

SD2932

175 MHz Test Circuit ComponentPart List

Compo nent Part Number Vendor Description

R1/R2 CR2412-1W-471JB VENKEL 470 Ohm 1 W, SurfaceMount Chip Resistor
R3/R4 DALE 360 Ohm 0.5 W, Carbon Comp. Axial Lead Resistor or Equiv.
R5/R6 CR2512-1W-471JB VENKEL 470 Ohm 1 W, SurfaceMount Chip Resistor
R7/R8 RS 2B DALE 560Ohm 2 W, Resistor Two Turn Wire Air-Wound Axial Lead

Resistor
R9/R10 534 - 1 -1 - 203 SPECTROL 20 KOhm 3.09 W, 10 Turn Wirewound Precision Potentiometer
C1/C4 ATC130B681KP50X ATC 680pF ATC 130B Surface Mount Ceramic Chip Capacitor
C2/C7/C8
C17/C19
C20/C21
C3 ATC200B122MW50X ATC 10000 pF ATC 200B SurfaceMount Ceramic Chip Capacitor
C5 ATC100B750KP500X ATC 75 pF ATC 100B Surface Mount Ceramic Chip Capacitor
C6 406 ARCO ST40 25 pF -115pF Miniature Variable Trimmer
C9/C10 ATC100B470KP500X ATC 47 pF ATC 100B Surface Mount Ceramic Chip Capacitor
C11-C12
C13
C14-C15
C24-C25
C16-C18 ATC700B471MP200X ATC 470 pF ATC 700B Surface Mount Ceramic Chip Capacitor
C22-C23 GRM43-4X7R104K500 MURATA 0.1 µF / 500V Surface Mount Ceramic Chip Capacitor
C26 C1812X7R501-103KNE VENKEL 0.01 µF/ 500V Surface Mount Ceramic Chip Capacitor
C27 GRM43-4X7R-104K500 MURATA 0.01 µF / 500V Surface Mount Ceramic Chip Capacitor
C28 SME63T10RM MARCON 10 µF / 63 V Aluminum Electrolytic Axial Lead Capacitor
B1 50 Ohm RG316, O.D. 0.076[1.93] L=11.80[299.72] Flexible

B2 83242 BELDEN 50 Ohm RG-142B O.D 0.165[4.19]L=11.80[299.72] Flexible
T1 R.F. Transformer 4:1, 25 Ohm RG316-25, O.D 0.080[2.03]

T2 UT141-25 MICRO
L1 83242 BELDEN Inductor λ 1/4 Wave50 Ohm O.D. 0.165[4.19] L=11.80[299.72]
FB1 2643665802 FAIR-RITE
FB2 2843009902 FAIR-RITE
FB3 2518068007 FAIR-RITE
FB4 2743021447 FAIR-RITE
FB5 2643801002 FAIR-RITE
FB6 2843010402 FAIR-RITE
PCB G0600M1016QA ROGERS

ATC200B103MW50X ATC 10000pF ATC 200B Surface Mount Ceramic Chip Capacitor

ATC100B430KP500X ATC 43pF ATC 100B Surface Mount Ceramic Chip Capacitor
ATC700B122MW50X ATC 1200 pF ATC 700B Surface Mount Ceramic Chip Capacitor

Coaxial Cable 4 Turns thru Fair-rite Bead

Coaxial Cable

L=5.90[149.86] Flexible Coaxial Cable 2 Turns Thru Fair-rite

Multi-aperture Core

R.F. Transformer 1:4, 25 Ohm Semi-rigid Coaxial Cable O.D.

COAX

CORP
CORP
CORP
CORP
CORP
CORP
CORP

0.141[3.58] L=5.90[149.86]

Flexible Coaxial Cable 2 Turns Thru Fair-rite Bead

Shield Bead

Multi-aperture Core

Multilayer Ferrite Chip Bead (Surface Mount)

Surface Mount Emi Shield Bead

Shield Bead

Multi-aperture Core

Woven Glass Reinforced PTFE Microwave Laminate 0.06”, 1oz

EDCu, Both sides, ε

= 2.55

r

6/13

175 MHz Test Circuit Photomaster

SD2932

175 MHz Text Fixture

7/13

SD2932

TYPICALBROADBANDDATA (175 - 230 MHz)

InputPower vs Frequency

12

10

8

PowerGainvs Frequency

18

17

16

15

6

4

Pin , INPUT POWER (W)

2

160 170 180 190 200 210 220 230 240

FREQUENCY (MHz)

Vdd =50V
Idq = 300 mA
Pout= 250W

14

13

Gp , POWER GAIN (dB)

Vdd = 50V
Idq = 300 mA
Pout = 250W

12

160 170 180 190 200 210 220 230 240

FREQUENCY (MHz)

Efficiencyvs Frequency ReturnLoss vs Frequency

80

Vdd = 50V

75

Idq = 300 mA
Pout = 250W

70
65
60
55
50

Nd , DRAIN EFFICIENCY (%)

45

160 170 180 190 200 210 220 230 240

FREQUENCY (MHz)

0

-2

-4

-6

-8

-10

-12

-14

RTL , RETURN LOSS (dB)

-16
160 170 180 190 200 210 220 230 240

FREQUENCY(MHz)

Vdd = 50V
Idq = 300 mA
Pout = 250W

1 dBCompressionPointvs Frequency

350

325

300

275

P1dB , 1dB COMPRESSION (W)

250

160 170 180 190 200 210 220 230 240

FREQUENCY (MHz)

8/13

Vdd = 50V
Idq = 300 mA

175 - 230MHz Circuit Layout (EngineeringFixture)

SD2932

175 -230 MHz CircuitLayout Component PartList

PCB 1/32” Woven Fiberglass 0.030 Cu, 2 sides, er = 4.8
T1 50 Ohm Flexible Coax Cable OD 0.06”, 3” Long. Ferrite Core NEOSIDE
T2 / T3 9:1 Transformer, 16.5 Ohm Flexible Coax Cable 0.1”, 3 Long
T4 / T5 4:1 Transformer, 25 Ohm Flexible Coax Cable OD 0.06”, 5” Long
C1 8.2 pF Ceramic Cap
C2 / C3 100 pF Chip Cap
C4 2 - 18 pF Chip Cap
C5 47 pF Ceramic Cap
C6 / C11 47 nF Ceramic Cap
C7 56 pF ATC Chip Cap
C8 / C9 / C13 470 pF ATC Chip Cap
C10 100 nF Ceramic Cap
C12 2x330 nF / 500 V Cap
C14 10 nF / 63 V Electrolityc Cap
R1 / R3 47 Ohm Resistor
R2 6.8K Ohm Chip Resistor
R4 4.7K Ohm MultiTurns Trim Resistor
R5 8.2K Ohm Resistor
R6 3.3K Ohm / 5 W Resistor
D1 6.8 V Zener Diode
L1 20 nH Inductor
L2 70 nH Inductor
L3 30 nH Inductor
L4 10 nH Inductor
L5 15 nH Inductor

9/13

SD2932

TYPICALBROADBANDDATA (88 - 108MHz)

InputPower vs Frequency

4

Vdd = 50V
Idq = 200 mA
Pout = 300W

3.5

PowerGainvs Frequency

22

21

20

19

3

Pin , INPUT POWER (W)

2.5
85 90 95 100 105 110

FREQUENCY (MHz)

18

17

Gp , POWER GAIN (dB)

16

85 90 95 100 105 110

FREQUENCY(MHz)

Efficiencyvs Frequency ReturnLoss vs Frequency

80
78
76
74
72
70
68
66
64

Nd , EFFICIENCY (%)

Vdd = 50V
Idq = 200 mA
Pout = 300W

62
60

85 90 95 100 105 110

FREQUENCY (MHz)

0

-2

-4

-6

-8

-10

-12

-14

-16

RTL , RETURN LOSS (dB)

-18

-20
85 90 95 100 105 110

FREQUENCY(MHz)

Vdd = 50V
Idq = 200 mA
Pout = 30 0W

Vdd = 50V
Idq = 200 mA
Pout = 30 0W

2nd Harmonic vs Frequency(88 - 108 MHz) 3rd Harmonicvs Frequency (88 - 108)

10/13

-10

-12

-14

-16

-18

-20

-22

-24

-26

-28

-30

-32

H2 , 2nd HARMONIC (dBc)

-34

Vdd = 50V
Idq = 200 mA
Pout = 300W

-36
85 90 95 100 105 110

FREQUENCY(MHz)

-10

-12

-14

-16

-18

-20

-22

-24

-26

-28

-30

-32

H3 , 3rd HARMONIC (dBc)

-34

Vdd = 50V
Idq = 200 mA
Pout = 300W

-36
85 90 95 100 105 110

FREQUENCY (MHz)

88 - 108MHz CircuitLayout(EngineeringFixture)

SD2932

88 -108MHz Circuit Layout ComponentPartList

PCB 1/32” Woven Fiberglass 0.030 Cu, 2 sides, er = 4.8
T1 50 Ohm Flexible Coax Cable OD 0.06”, 5”” Long
T2 / T3 9:1 Transformer, 25 Ohm Flexible Coax Cable OD 0.1”, 3.9”. Ferrite Core NEOSIDE
T4 / T5 4:1 Transformer, 25 Ohm Flexible Coax Cable OD 0.1”,5” Long
T6 50 Ohm Flexible Coax Cable OD0.1”, 5” Long
FB1 vk200
C1 10 pF Ceramic Cap
C2 / C3 / C4 / C7 / C8 1 nF Chip Cap
C5 / C6 1 nF ATC chip Cap
C9 470 pF ATC Chip Cap
C10 100 nF Chip Cap
C11 100 uF / 63 V Electrolytic Cap
R1 56 Ohm Resistor
R2 / R4 10 Ohm Chip Resistor
R3 10K Ohm Resistor
R5 5.6 Ohm Resistor
R6 10K Ohm, 10 Turn Trim Resistor
R7 3.3K Ohm / 5 W Resistor
R8 15 Ohm / 1 W Resistor
D1 6.6 V Zener Diode
L1 10 nH Inductor
L2 40 nH Inductor
L3 70 nH Inductor

11/13

SD2932

12/13

SD2932

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