Datasheet SD2931-10 Datasheet (SGS Thomson Microelectronics)



HF/VHF/UHF N-CHANNEL MOSFETs

ν GOLDMETALLIZATION
ν EXCELLENTTHERMALSTABILITY
ν COMMONSOURCE CONFIGURATION
ν POUT= 150W MIN. WITH 14 dB gain@175

MHz

ν THERMALLYENHANCED PACKAGINGFOR

LOWERJUNCTIONTEMPERATURES

SD2931-10

RF POWER TRANSISTORS

ADVANCE DATA

DESCRIPTION

The SD2931-10 is a gold metallized N-Channel
MOS field-effect RF power transistor. Being
electrically identical to the standard SD2931

ORDERCODE BRANDING

SD2931-10 TSD2931-10

M174

epoxy sealed

MOSFET, it is intended for use in 50V dc large
signal applicationsup to 230MHz.

The SD2931-10 is mechanical compatible to the
SD2931 but offers in addition a better thermal
capability (25 % lower thermal resistance),

PIN CONNECTION

representing the best-in-class transistors for ISM
applications.

1. Drain 3.Gate

2. Source 4. Source

ABSOLUTE MAXIMUM RATINGS (T

Symb o l Parameter Val u e Uni t

V

(BR)DSS

V

V

P

T

Drain Sou r ce Volt age 125 V
Drain-G ate Vol t age (RGS=1MΩ) 125 V

DGR

Gat e- Source Voltage ±20 V

GS

Drain Current 20 A

I

D

Power Diss ip at ion 389 W

DISS

Max. Oper ating Junction Temperature 200

T

j

Storage T emperature -65 to 150

STG

case

=25oC)

o

C

o

C

THERMAL DATA

R

th(j-c)

R

th(c-s)

* Determined using a flataluminum or copper heatsink with thermal compound applied (Dow Corning 340 or equivalent).

March 2000

Junct ion- Ca se Th er m al Resist ance
Case-Heat s i nk T her mal R es istance ∗

0.45

0.2

o

C/W

o

C/W

1/10

SD2931-10

ELECTRICAL SPECIFICATION (T

case

=25oC)

STATIC

Symb o l Para met er Mi n . Typ . Max. Unit

V

(BR)DSSVGS

I

DSS

I

GSS

V

GS(Q) *

V

DS(ON)VGS

G

FS

C

ISS

C

OSS

C

RSS

*V

sorted with alpha/numeric code marked on unit.

GS(Q)

=0V IDS= 100 mA 125 V
VGS=0V VDS=50V 5 mA
VGS= 20V VDS=0V 5 µA
VDS = 10V ID= 250 mA 2.0 5.0 V

= 10V ID=10A 3.0 V
VDS= 10V ID=5A 5 mho
VGS=0V VDS= 50 V f = 1 M H z 480 pF
VGS=0V VDS= 50 V f = 1 M H z 190 pF
VGS=0V VDS=50V f=1MHz 18 pF

REF. 7165489C

DYNAMIC

Symb o l Para met er Mi n . Typ . Max. Unit

P

OUT

G

η

Load

Mismatch

f = 175 M H z VDD=50V IDQ= 250 mA 150 W
f = 175 M H z VDD=50V P

PS

f = 175 M H z VDD=50V P

D

f = 175 M H z V

DD

=50V P

=150W IDQ= 250 mA 14 15 dB

out

=150W IDQ= 250 mA 55 65 %

out

=150W IDQ=250mA

out

10:1 VSWR

All Phase A ngles

IMPEDANCEDATA

FREQ. ZIN(Ω)Z

30 MHz 1.7 - j 5. 7 6.8 + j 0. 9

175 MHz 1.2 - j 2. 0 2.0 + j 2. 4

2/10

SORTS

V

GS

A 2.0 - 2.1 R 3.5 - 3.6
B 2.1 - 2.2 S 3.6 - 3.7
C 2.2 - 2.3 T 3.7 - 3.8
D 2.3 - 2.4 U 3.8 - 3.9
E 2.4 - 2.5 V 3.9 - 4.0
F 2.5 - 2.6 W 4.0 - 4.1
G 2.6 - 2.7 X 4.1 - 4.2
H 2.7 - 2.8 Y 4.2 - 4.3
J 2.8 - 2.9 Z 4.3 - 4.4
K 2.9 - 3.0 2 4.4- 4.5
L 3.0- 3.1 3 4.5- 4.6

(Ω)

DL

M 3.1 - 3.2 4 4.6 - 4.7
N 3.2 - 3.3 5 4.7 - 4.8
P 3.3 - 3.4 6 4.8 - 4.9
Q 3.4 - 3.5 7 4.9 - 5.0

TYPICALPERFORMANCE

SD2931-10

Capacitancevs Drain-SourceVoltage

10000

1000

Ciss

100

C, CAPACITANCE (pF)

10

0 1020304050

Coss

Crss

VDS, DRAIN-SOURCE VOLTAGE (V)

f =1MHz

Drain Currentvs Gate Voltage

20

15

10

5

ID, DRAIN CURRENT (A)

0

2 2.5 3 3.5 4 4.5 5 5.5 6

VGS, GATE-SOURCE VOLTAGE (V)

Tc=+25°C

Gate-SourceVoltages vs CaseTemperature Maximum ThermalResistance vs Case

Temperature

1.1

1.05

1

0.95

0.9

0.85

VGS, GATE-SOURCE VOLTAGE (NORMALIZED)

0.8

-25 0 25 50 75 100

Tc, CASE TEMPERATURE (°C)

Id =11A

Id =10A

Id =.25A

Id =9A

Id =7A

Id =5A

Id =4A

Id =2A

Id =1A

Id =.1A

0.6

0.56

0.52

RTH(j-c) (°C/W)

0.48

0.44
25 35 45 55 65 75 85

Tc, CASE TEMPERATURE (°C)

Tc=-20°C

Tc=+80°C

DC Safe OperatingArea

100

10

Ids(A)

(1)

1

1 10 100 1000

(1)Currentinthis area may belimited by R

ds(on)

Vds(V)

3/10

SD2931-10

TYPICALPERFORMANCE(175 MHz)

OutputPower vs InputPowerOutputPower vs Input Power

250

200

150

100

50

Pout, OUTPUT POWER(W)

0

0 5 10 15 20 25

Pin, INPUT POWER(W)

PowerGain vs Output Power

15

14

13

12

Vdd=50V
Idq=250mA

11

Gp, POWER GAIN (dB)

f=175Mhz

10

0 50 100 150 200 250

Pout, OUTPUT POWER (W)

Pout=50V

Pout=40V

f=175Mhz
Idq=250mA

270
240
210
180
150
120

90
60

Pout, OUTPUT POWER (W)

30

0

0 5 10 15 20 25

Pin, INPUT POWER(W)

Efficencyvs Output Power

70

60

50

40

Nc, EFFICIENCY (%)

30

0 50 100 150 200 250

Pout, OUTPUT POWER (W)

Vdd=50V
Idq=250mA
f=175Mhz

Tc=-20 °C

Tc=+25 °C

Tc=+80 °C

Vdd=50V
Idq=250mA
f=175Mhz

OutputPower vs SupplyVoltage

250

200

150

100

Pout,Output Power(W)

50

0

24 28 32 36 40 44 48 52

Vdd,Drain Voltage(V)

4/10

Pin=10W

Pin=5W

Pin=2.5W

Idq=250mA
f=175Mhz

OutputPower vs GateVoltage

200

Tc=+25 °C

150

100

50

Pout, OUTPUT POWER (W)

0

-3 -2 -1 0 1 2 3

VGS, GATE-SOURCE VOLTAGE(V)

Tc=-20 °C

Tc=+80 °C

175 MHz Test CircuitSchematic (ProductionTest Circuit)

V

G +50V

SD2931-10

Note : All dimensions in inches

REF. 1021579C

175 MHz Test CircuitComponent Part List

T1 4:1 Transformer, 25 ohm Flexible Coax .090 OD 6 ” Long
T2 1:4 Transformer, 25 ohm Semi-Rigid Coax .141 OD 6 ” Long
FB1 Toroid X2, 0.5” OD .312” ID 850u 2 Turns

FB2, FB3 VK200
FB4 Shield Bead, 1” OD 0.5” ID 850u 3 Turns
L1 1/4Wave Choke, 50 ohm Semi-Rigid Coax .141 OD 12 ” Long

PCB 0.062” Woven Fiberglass, 1 oz. Copper, 2 Sides, er = 2.55
R1, R3 470 ohm 1W Chip Resistor R4 20K ohm 10 Turn Potentiometer
R2 360 ohm 1/2W Resistor R5 560 ohm 1W Resistor
C1, C11 470 pF ATCChip Cap C7 30 pF ATCChip Cap
C2 43 pF ATCChip Cap C10 91pF ATCChip Cap
C3, C8, C9 Arco 404, 12-65 pF C12, C15 1200 pF ATC Chip Cap

C4 Arco 423, 16-100 pF C13, C14 0.01 uF / 500V Chip Cap
C5 120 pF ATCChip Cap C16, C17 0.01 uF / 500V Chip Cap
C6 0.01 uF ATCChip Cap C18 10 uF 63V Electrolytic Capacitor

5/10

SD2931-10

175 MHz Test CircuitPhotomaster

175 MHz Test Circuit

6/10

TYPICALPERFORMANCE (30 MHz)

SD2931-10

OutputPower vs Input Power

250

200

150

100

50

Pout, OUTPUT POWER(W)

0

0.01 0.06 0.11 0.16 0.21 0.25 0.3013 0.35 0.40

Pin, INPUT POWER (W)

Efficency vsOutput Power

60
50
40
30
20

Efficiency(%)

10

Vdd = 50V

Vdd = 40V

f = 30 MHz
IDQ = 250 mA

f= 30 MHz
VDD = 50 V
IDQ = 250 mA

PowerGain vs OutputPower

28.5

28

27.5

f= 30MHz
VDD= 50 V

27

IDQ= 250 mA

PG, POWER GAIN (dB)

26.5
0 50 100 150 200

Pout, OUTPUT POWER (W)

OutputPower vs SupplyVoltage

200

150

100

50

Pout, OUTPUT POWER(W)

f = 30 MHz
IDQ = 250 mA

Pin=.31 W

Pin=.22 W

Pin=.13 W

0

0 50 100 150 200

Pout, OUTPUT POWER (W)

OutputPower vs GateVoltage

200

150

100

50

Pout, OUTPUT POWER (W)

0

0123456

VGS GATE-SOURCE VOLTAGE (V)

VDD = 50 V
IDQ = 250 mA
f = 30 MHz
Pin = Constant

T= +25 °C

T= -20 °C

T= +80 °C

0

24 28 32 36 40 44 48 52

VDD, SUPPLY VOLTAGE(V)

7/10

SD2931-10

30 MHz TestCircuit Schematic(EngineeringTest Circuit)

V +G

30 MHz TestCircuit Component PartList

+50V

T1 9:1 Transformer,25 ohm Flexible Coax with extra shield.090 OD 15” Long
T2 1:4 Transformer,50 ohm Flexible Coax .225 OD 15” Long
FB1 Toroid, 1.7” OD .30” ID 220u4 Turns
FB2 SurfaceMount EMI Shield Bead
FB3 Toroid, 1.7” OD .300” ID 220u3 Turns
RFC1 Toroid, 0.5” OD 0.30” ID, 125u4 turns 12 awg wire
PCB 0.062” WovenFiberglass, 1 oz. Copper,2 Sides, er = 2.55
C1, C4, C6, C7, C8, 0.01 uF ATCChip Cap C5 470 pF ATCChip Cap
C9, C11, C12, C13 0.01uF ATCChip Cap C10 10uF 63V Electrolytic Capacitor
C2, C3 750pF ATC ChipCap C14 100 uF 63V Electrolytic Capacitor
R1, R3 1K ohm 1W ChipResistor R2 680 ohm 3W WirewoundResistor

8/10

M174 (.500 DIA 4L N/HERM W/FLG) MECHANICALDATA

SD2931-10

DIM.

MIN. TYP. MAX. MIN. TYP. MAX.

A 5.56 5.84 0.219 0.230
B 3.18 0.125
C 6.22 6.48 0.245 0.255
D 18.28 18.54 0.720 0.730
E 3.18 0.125

F 24.64 24.89 0.970 0.980
G 12.57 12.83 0.495 0.505
H 0.08 0.18 0.003 0.007

I 2.11 3.00 0.083 0.118

J 3.81 4.45 0.150 0.175
K 7.11 0.280
L 25.53 26.67 1.005 1.050

M 3.05 3.30 0.120 0.130

mm inch

Controlling Dimensionin Inches

1011000D

9/10

SD2931-10

Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes noresponsibility for theconsequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject tochange without notice.This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are notauthorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.

The ST logo is a trademark of STMicroelectronics

2000 STMicroelectronics – Printedin Italy – All Rights Reserved

STMicroelectronicsGROUP OF COMPANIES

Australia - Brazil - China - Finland - France - Germany- Hong Kong - India - Italy - Japan -Malaysia - Malta - Morocco -

Singapore- Spain - Sweden - Switzerland - United Kingdom - U.S.A.

http://www.st.com

10/10