HF/VHF/UHF N-CHANNEL MOSFETs
■ GOLDMETALLIZATION
■ EXCELLENTTHERMAL STABILITY
■ COMMONSOURCE CONFIGURATION
■ POUT = 300W MIN. WITH 12.5 dB GAIN
@175MHz
DESCRIPTION
The SD2922 is a gold metallizedN-Channel MOS
field-effect RF power transistor. The SD2922 is
intended for use in 50V dc large signal
applicationsup to 200 MHz
SD2922
RF POWER TRANSISTORS
M244
epoxy sealed
ORDER CODE BRANDING
SD2922 SD2922
PIN CONNECTION
1. Drain 3. Source
2. Gate
ABSOLUTE MAXIMUM RATINGS (T
Symb o l Para meter Val u e Uni t
V
(BR)DSS
V
V
P
T
Drain S our ce Vo lt age 125 V
Drain-Gate Voltage (RGS=1MΩ)
DGR
Gat e- Source Voltage ± 20 V
GS
Drain C urr ent 40 A
I
D
Power Di ss ipation 500 W
DISS
Max. Operating Junction Te mperatur e +200
T
j
Sto rage Temperature -65 to 150
STG
case
=25oC)
125 V
THERMAL DATA
R
th(j-c)
R
th(c-s)
∗ Determined using a flat aluminumor copper heatsink with thermal compound applied (Dow Corning 340 or equivalent).
November 1999
Junct ion-Case Ther mal R esista nce 0.35
Case Heatsink Ther mal Resistance ∗
0.12
o
o
o
C/W
o
C/W
C
C
1/13
SD2922
ELECTRICAL SPECIFICATION (T
case
=25oC)
STATIC (per section)
Symbol Para met e r Mi n . Typ . Ma x. Unit
V
(BR)DSSVGS
I
DSS
I
GSS
V
GS(Q)
V
DS(on)VGS
gfs V
C
ISS
C
OSS
C
RSS
=0V IDS= 1 00 mA 125 V
VGS=0V VDS=50V 5 mA
VGS=20V VDS=0V 5 µA
VDS=10V ID=250mA 1 5 V
=10V ID=10A 3 V
=10V ID=5A 4 mho
DS
VGS=0V VDS= 5 0 V f = 1 MHz 411 pF
VGS=0V VDS= 5 0 V f = 1 MHz 198 pF
VGS=0V VDS=50V f=1MHz 27 pF
REF. 1021306E
DYNAMIC
Symbol Para met e r Mi n . Typ . Ma x. Unit
P
OUT
G
η
Load
Mismatch
f = 175 MHz VDD=50V IDQ= 5 00 mA 300 W
f = 175 MHz VDD=50V P
PS
f = 175 MHz VDD=50V P
D
f = 175 MHz V
DD
=50V P
=300W IDQ= 5 00 mA 12.5 15 dB
out
=300W IDQ= 5 00 mA 50 60 %
out
=300W IDQ=500mA
out
5:1 VSWR
All Phase Angles
IMPEDANCEDATA
Measured Gate to Gate and Drain toDrain, respectively.
FREQ. ZIN(Ω) Z DL(Ω )
175 MHz 0 .92 - j 0.14 3.17 + j 4.34
2/13
SD2922
MaximumThermal Resistancevs Case
Temperature
0.42
0.4
0.38
Rth(j-c)(ºC/W)
0.36
0.34
25 45 65 85
Tc,Case Temperature (° C)
Capacitancevs Drain-SourceVoltage
10000
1000
100
C, CAPACITANCE (pF)
10
0 1 02 03 04 05 06 0
VDS, DRAIN-SOURCE VOLTAGE (VOLTS)
GC81240
Ciss
Coss
Crss
GC83360
DC Safe OperatingArea
100
50
30
20
(1)
10
5
Ids, DRAIN CURRENT (A)
3
2
1
1 2 5 10 20 50 100 200 500 1,000
Vds, DRAIN SOURCEVOLTAGE(V)
(1) Currentinthisareamaybelimited by RDS(on)
Twosides,each sectionequallyloaded
GC81900
Drain Current vs Gate Voltage
12
10
VDS = 10V
8
6
4
ID, DRAIN CURRENT (A)
2
0
1234567
Tc= 25° C
Tc= 80° C
Tc= -20° C
VGS GATE-SOURCE VOLTAGE (VOLTS)
GC81250
Gate Voltage vs Case Temperature
1.15
1.1
1.05
1
0.95
0.9
VGS, GATE-SOURCE VOLTAGE(Normalized)
0.85
-25 0 25 50 75 100
Tc, CASE TEMPERATURE (ºC)
Id= 0.25A
Id= 1A
Id = 2A
GC81260
Id= 5A
Id= 4A
Id= 0.1A
3/13
SD2922
TYPICALPERFORMANCE(175 MHz)
OutputPowervs Input Power
400
Vdd = 50V
300
200
100
Pout, OUTPUT POWER (W)
0
135791 11 3
f=175MHz
IDQ = 500 mA
Pin, INPUT POWER (W)
GC81200
Vdd = 40V
OutputPowervs Supply Voltage
GC81220
Pin = 13W
Pin= 10W
Pin = 5W
Pout, OUTPUTPOWER (W)
400
300
200
100
IDQ = 500mA
f = 175MHz
OutputPower vsInput Power
400
300
200
100
Pout, OUTPUT POWER (W)
0
135791 11 3
Pin, INPUT POWER (W)
Tc = -20° C
Tc =25° C
VDD= 50V
f =175MHz
IDQ= 500 mA
Tc=80° C
OutputPower vsGateVoltage
400
Tc= -20° C
VDD= 50 V
IDQ= 50 0mA
f = 175MHz
Pin = Constant
Tc= 80° C
Pout,OUTPUTPOWER (W)
300
Tc= 25° C
200
100
GC81210
GC812 30
0
25 30 35 40 45 50
VDD, SUPPLY VOLTAGE (VOLTS)
4/13
0
- 4- 3- 2- 101234
VGSGATE-SOURCEVOLTAGE(VOLTS)
175 MHz Test Circuit Schematic(Production Test Circuit)
SD2922
REF. 1022256B
5/13
SD2922
175 MHz Test CircuitComponentPart List
Compo nent Part Number Ven dor Description
R1/R2 CR2412-1W-471JB VENKEL 470 Ohm 1 W, Surface Mount Chip Resistor
R3/R4 DALE 360 Ohm 0.5 W, Carbon Comp. Axial Lead Resistor or Equiv.
R5/R6 CR2512-1W-471JB VENKEL 470 Ohm 1 W, Surface Mount Chip Resistor
R7/R8 RS 2B DALE 560 Ohm 2 W, Resistor Two Turn Wire Air-Wound Axial Lead
Resistor
R9/R10 534 - 1 -1 - 203 SPECTROL 20 KOhm 3.09 W, 10 Turn Wirewound Precision Potentiometer
C1/C4 ATC130B681KP50X ATC 680 pF ATC 130B Surface Mount Ceramic Chip Capacitor
C2/C7/C8
C17/C19
C20/C21
C3 ATC200B122MW50X ATC 10000 pF ATC 200B Surface Mount Ceramic Chip Capacitor
C5 ATC100B750KP500X ATC 75 pF ATC 100B Surface Mount Ceramic Chip Capacitor
C6 406 ARCO ST40 25 pF -115pF Miniature Variable Trimmer
C9/C10 ATC100B470KP500X ATC 47 pF ATC 100B Surface Mount Ceramic Chip Capacitor
C11-C12
C13
C14-C15
C24-C25
C16-C18 ATC700B471MP200X ATC 470 pF ATC 700B Surface Mount Ceramic Chip Capacitor
C22-C23 GRM43-4X7R104K500 MURATA 0.1 µ F / 500V Surface Mount Ceramic Chip Capacitor
C26 C1812X7R501-103KNE VENKEL 0.01 µ F/ 500V Surface Mount Ceramic Chip Capacitor
C27 GRM43-4X7R-104K500 MURATA 0.01 µ F / 500V Surface Mount Ceramic Chip Capacitor
C28 SME63T10RM MARCON 10 µ F / 63 V Aluminum Electrolytic Axial Lead Capacitor
B1 50 Ohm RG316, O.D. 0.076[1.93] L=11.80[299.72] Flexible
B2 83242 BELDEN 50 Ohm RG-142B O.D 0.165[4.19] L=11.80[299.72] Flexible
T1 R.F. Transformer 4:1, 25 Ohm RG316-25, O.D 0.080[2.03]
T2 UT141-25 MICRO
L1 83242 BELDEN Inductor λ 1/4 Wave 50 Ohm O.D. 0.165[4.19] L=11.80[299.72]
FB1 2643665802 FAIR-RITE
FB2 2843009902 FAIR-RITE
FB3 2518068007 FAIR-RITE
FB4 2743021447 FAIR-RITE
FB5 2643801002 FAIR-RITE
FB6 2843010402 FAIR-RITE
PCB G0600M1016QA ROGERS
ATC200B103MW50X ATC 10000 pF ATC 200B Surface Mount Ceramic Chip Capacitor
ATC100B430KP500X ATC 43 pF ATC 100B Surface Mount Ceramic Chip Capacitor
ATC700B122MW50X ATC 1200 pF ATC 700B Surface Mount Ceramic Chip Capacitor
Coaxial Cable 4 Turns thru Fair-rite Bead
Coaxial Cable
L=5.90[149.86] Flexible Coaxial Cable 2 Turns Thru Fair-rite
Multi-aperture Core
R.F. Transformer 1:4, 25 Ohm Semi-rigid Coaxial Cable O.D.
COAX
CORP
CORP
CORP
CORP
CORP
CORP
CORP
0.141[3.58] L=5.90[149.86]
Flexible Coaxial Cable 2 Turns Thru Fair-rite Bead
Shield Bead
Multi-aperture Core
Multilayer FerriteChip Bead (Surface Mount)
Surface Mount Emi Shield Bead
Shield Bead
Multi-aperture Core
Woven Glass Reinforced PTFE Microwave Laminate 0.06”, 1oz
EDCu, Both sides, ε
= 2.55
r
6/13
175 MHz Test Circuit Photomaster
SD2922
175 MHz Text Fixture
7/13
SD2922
TYPICALBROADBANDDATA (175 - 230 MHz)
Input Power vs Frequency
12
10
8
6
Pin,INPUT POWER (W)
4
2
170 180 190 200 210 220 230
Vdd=50V
Idq=600mA
Pout=250W
FREQUENCY (MHz)
GC81920
PowerGain vs Frequency
17
16
15
14
Gp, POWER GAIN (dB)
13
12
170 180 190 200 210 220 230
FREQUENCY (MHz)
Efficiency vs Frequency ReturnLoss vs Frequency
70
67.5
65
62.5
60
EFFICIENCY (%)
57.5
55
170 180 190 200 210 220 230
FREQUENCY (MHz)
Vdd=50V
Idq=600mA
Pout=250W
GC81940
-2
-4
-6
-8
-10
Vdd=50V
-12
Idq=600mA
Pout=250W
-14
-16
RTL, RETURN LOSS(dB)
-18
-20
170 180 190 200 210 220 230
FREQUENCY (MHz)
Vdd=50V
Idq=600mA
Pout=250W
GC81930
GC81950
1 dB Compression
15.5
Vdd=50V
Idq=600mA
14.5
13.5
Gp, POWER GAIN (dB)
12.5
0 100 200 300 400
Pout, OUTPUT POWER(W)
8/13
Freq=175MHz
GC81960
1 dB Compression
15.5
14.5
13.5
Gp, POWER GAIN (dB)
12.5
0 100 200 300 400
Pout, OUTPUT POWER (W)
GC81970
Vdd=50V
Idq=600mA
Freq=230MHz
175 - 230 MHz Circuit Layout (EngineeringFixture)
SD2922
175 -230 MHz Circuit LayoutComponent Part List
PCB 1/32” WovenFiberglass 0.030Cu, 2 sides, er =4.8
T1 50 OhmFlexibleCoax Cable OD 0.06”, 3” Long. Ferrite Core NEOSIDE
T2 / T3 9:1 Transformer,16.5 OhmFlexible Coax CableOD 0.1”, 3”Long
T4 / T5 4:1Transformer, 25 OhmFlexible Coax Cable OD 0.06”, 5”Long
C1 8.2 pF Ceramic Cap
C2/C3 100pF ChipCap
C4 2-18pF VariableCap
C5 47pF CeramicCap
C6 / C11 47 nF CeramicCap
C7 56pF ATCChip Cap
C8 / C9 / C13 470 pF ATCChip Cap
C10 100nF CeramicCap
C12 2x330nF / 500V Cap
C14 10 nF / 63V Electrolytic Cap
R1 / R3 47 OhmResistor
R2 6.8KOhm Chip Resistor
R4 4.7KOhm MultiTurnsTrimResistor
R5 8.2KOhm Resistor
R6 3.3KOhm / 5 W Resistor
D1 6.8 V ZenerDiode
L1 20 nH Inductor
L2 70 nH Inductor
L3 30 nH Inductor
L4 10 nH Inductor
L5 15 nH Inductor
9/13
SD2922
TYPICALBROADBANDDATA (88 - 108 MHz)
Input Power vs Frequency
7
6
5
4
3
Pin, INPUT POWER(W)
2
1
85 90 95 100 105 110
Vdd=50V
Idq=400mA
Pout=300W
FREQUENCY (MHz)
GC81980
PowerGain vs Frequency
22
21
20
19
18
17
16
15
Gp, POWER GAIN (dB)
14
13
12
85 90 95 100 105 110
Vdd=50V
Idq=400mA
Pout=300W
FREQUENCY (MHz)
Efficiency vs Frequency ReturnLoss vs Frequency
70
67
64
61
EFFICIENCY (%)
58
55
85 90 95 100 105 110
Vdd=50V
Idq=400mA
Pout=300W
FREQUENCY (MHz)
GC82000
-2
-4
-6
-8
-10
-12
-14
-16
RTL, RETURN LOSS (dB)
-18
-20
85 90 95 100 105 110
FREQUENCY (MHz)
Vdd=50V
Idq=400mA
Pout=300W
GC81990
GC82010
10/13
88 - 108 MHz Circuit Layout (EngineeringFixture)
SD2922
88 -108 MHz Circuit Layout ComponentPart List
PCB 1/32” Woven Fiberglass 0.030 Cu, 2 sides, er =4.8
T1 50 Ohm Flexible Coax Cable OD 0.06”, 5” Long
T2 / T3 9:1 Transformer, 25 Ohm Flexible Coax Cable OD 0.1”, 3.9”. Ferrite Core NEOSIDE
T4 / T5 4:1Transformer, 25 Ohm Flexible Coax Cable OD 0.1”, 5” Long
T6 50 Ohm Flexible Coax Cable OD 0.1”, 5” Long
FB1 VK200
C1 10 pF Ceramic Cap
C2 / C3 / C4 / C7 / C8 1 nF Chip Cap
C5 / C6 1 nF ATC chip Cap
C9 470 pF ATC Chip Cap
C10 100 nF Chip Cap
C11 100 uF / 63 V Electrolytic Cap
R1 56 Ohm Resistor
R2/R4 10 Ohm Chip Resistor
R3 10K Ohm Resistor
R5 5.6K Ohm Resistor
R6 10K Ohm, 10 Turn Trim Resistor
R7 3.3K Ohm / 5 W Resistor
R8 15 Ohm / 1 W Resistor
D1 6.8 VZener Diode
L1 10 nH Inductor
L2 40 nH Inductor
L3 70 nH Inductor
11/13
SD2922
M244 (.400 x .860 4/L BAL N/HERM W/FLG) MECHANICALDATA
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.
A 5.59 5.84 0.220 0.230
B 5.33 0.210
C 3.05 3.30 0.120 0.130
D 9.65 9.91 0.380 0.390
E 19.81 20.83 0.780 0.820
F 11.05 0.435
G 27.94 1.100
H 33.91 34.16 1.335 1.345
I 0.08 0.18 0.003 0.007
J 1.52 1.78 0.060 0.070
K 2.54 2.92 0.100 0.115
L 5.84 0.230
M 10.03 10.34 0.395 0.407
N 21.59 22.10 0.850 0.870
mm inch
12/13
Note: Controllingdimension in Inches
1020876A
SD2922
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13/13