Datasheet SD2921-10 Datasheet (SGS Thomson Microelectronics)



HF/VHF/UHF N-CHANNEL MOSFETs

■ GOLDMETALLIZATION

■ EXCELLENTTHERMALSTABILITY

■ COMMONSOURCE CONFIGURATION

■ POUT = 150W MIN. WITH 12.5dB gain @175

MHz

■ THERMALLYENHANCED PACKAGINGFOR

LOWERJUNCTION TEMPERATURES

SD2921-10

RF POWER TRANSISTORS

DESCRIPTION

The SD2921-10 is a gold metallized N-Channel
MOS field-effect RF power transistor. Being
electrically identical to the standard SD2921

ORDER CODE BRANDING

SD2921-10 SD2921-10

M174

epoxy sealed

MOSFET, it is intended for use in 50V dc large
signal applications up to 200 MHz.

The SD2921-10 is mechanical compatible to the
SD2921 but it offers in addition a better thermal
capability (25% lower thermal resistance),

PIN CONNECTION

representing the best-in-class transistor for ISM
applications.

1. Drain 3.Gate

2. Source 4. Source

ABSOLUTE MAXIMUM RATINGS (T

Symb o l Para meter Val u e Uni t

V

(BR)DSS

V

V

P

T

Drain S our ce Vo lt age 125 V
Drain-Gate Voltage (RGS=1MΩ)

DGR

Gat e- Source Voltage ±20 V

GS

Drain C urr ent 20 A

I

D

Power Di ss ipation 389 W

DISS

Max. Operating Junction Te mperatur e 200

T

j

Sto rage T emperatur e -65 to 1 50

STG

case

=25oC)

125 V

o

C

o

C

THERMAL DATA

R

th(j-c)

R

th(c-s)

* Determined using a flat aluminum or copperheatsink with thermal compound applied (Dow Corning340 or equivalent).

November 1999

Junct ion-Case Ther mal R esista nce
Case-Heatsink T her mal Resistance ∗

0.45

0.2

o

C/W

o

C/W

1/10

SD2921-10

ELECTRICAL SPECIFICATION (T

case

=25oC)

STATIC

Symbol Para met e r Mi n . Typ . Ma x. Unit

V

(BR)DSSVGS

I

DSS

I

GSS

V

GS(Q)

V

DS(ON)VGS

G

FS

C

ISS

C

OSS

C

RSS

=0V IDS= 100 mA 125 V
VGS=0V VDS=50V 5 mA
VGS=20V VDS=0V 5 µA
VDS=10V ID= 250 mA 2.0 5.0 V

=10V ID=10A 3.0 V
VDS=10V ID=5A 4 mho
VGS=0V VDS= 50 V f = 1 M Hz 411 pF
VGS=0V VDS= 50 V f = 1 M Hz 198 pF
VGS=0V VDS=50V f=1MHz 27 pF

REF. 1021305M

DYNAMIC

Symbol Para met e r Mi n . Typ . Ma x. Unit

P

OUT

G

η

Load

Mismatch

f = 175 MHz VDD=50V IDQ= 250 mA 150 W
f = 175 MHz VDD=50V P

PS

f = 175 MHz VDD=50V P

D

f = 175 MHz V

DD

=50V P

=150W IDQ= 250 m A 12.5 14 dB

out

=150W IDQ= 250 m A 50 55 %

out

=150W IDQ=250mA

out

10:1 VSWR

All Phase Angles

IMPEDANCEDATA

2/10

FREQ. ZIN(Ω)Z

DL

(Ω)

30 MHz 1.7 - j 5.7 6.8 + j 0.9

175 MHz 1.2 - j 2.0 2. 0 + j 2.4

TYPICALPERFORMANCE

SD2921-10

OutputPowervs Input Power

250

200

150

100

50

Pout, OUTPUT POWER (W)

0

14710131619

Pin, INPUT POWER (W)

Vdd = 50V

OutputPowervs SupplyVoltage

200

150

100

50

Pout, OUTPUT POWER (WATTS)

0

24 28 32 36 40 44 48

VDD, SUPPLY VOLTAGE (VOLTS)

Pin = 9W

Vdd = 40V

Tc = 25°C
f = 175 MHz
IDQ = 250mA

Pin = 6W

Pin = 3W

IDQ = 250mA
f = 175MHz

OutputPower vs Input Power

300

250

200

150

100

50

Pout, OUTPUT POWER (W)

0

1 3 5 7 9 1113151719

Pin, INPUT POWER (W)

OutputPower vs GateVoltage

200

VDD = 50V

150

IDQ = 250mA
f = 175MHz
Pin = Constant

100

50

Pout, OUTPUT POWER (W)

0

-3 -2 -1 0 1 2 3

VGS, GATE-SOURCE VOLTAGE (VOLTS)

T = -20°C

Tcase =-20°C

Tcase = 25°C

Tcase = 80°C

IDQ = 250 mA
VDD = 50V
f = 175MHz

T=80°C

T=25°C

Capacitancevs Drain-SourceVoltage

10000

1000

100

C, CAPACITANCE(pF)

10

0 1020304050

VDS,DRAIN-SOURCEVOLTAGE(VOLTS)

Crss

Ciss

Coss

Drain Current vs Gate Voltage

15

10

5

ID, DRAIN CURRENT (A)

0

2 2.5 3 3.5 4 4.5 5 5.5 6

VGS,GATE-SOURCEVOLTAGE(VOLTS)

T = -20°C

T=25°C

T=80°C

VDS= 10V

3/10

SD2921-10

TYPICALPERFORMANCE

Gate-SourceVoltagesvs Case Temperature

OutputPower vs GateVoltage

200

1.1

1.05

1

0.95

0.9

0.85

VGS, GATE-SOURCE VOLTAGE (NORMALIZED

-25 0 25 50 75 100

VDS = 10V

Tc, CASE TEMPERATURE (°C)

Id = 5A

Id = 4A

Id = 2A
Id = 1A

Id = .25A

Id = .1A

150

VDD= 50 V
IDQ= 250 mA
f = 30MHz

100

Pout, OUTPUT POWER (W)

FixedPin

50

0

0123456

VGSGATE-SOURCE VOLTAGE(V)

PowerGainvs Output Power OutputPower vs Input Power

26.5

26

25.5

PG, POWER GAIN(dB)

25

24.5

f =30 M Hz
VDD= 50 V
IDQ= 250 mA

0 50 100 150 200

Pout, OUTPUT POWER (W)

SC13170

250

200

150

100

50

Pout, OUTPUT POWER(W)

0

0.02 0.1 0.18 0.26 0.34 0.42 0.5 0.58 0.66

Pin, INPUT POWER (W)

Tfl= 25°C

VDD= 50 V

Tfl= -20°C

Tfl= 80°C

VDD= 40 V

f=30MHz
IDQ= 250 mA

SC13 210

SC13180

Efficiency vs Output Power

60

40

Efficiency(%)

20

0

0 50 100 150 200

Pout,OUTPUTPOWER(W)

4/10

f= 30M Hz
VDD= 50 V
IDQ= 250 mA

SC13190

OutputPower vs VoltageSupply

200

150

100

50

Pout, OUTPUT POWER (W)

0

24 28 32 36 40 44 48

VDD,SUPPLY VOLTAGE(V)

Pin= 0.6W

f= 30 MHz
IDQ= 250 mA

Pin= 0.4W

Pin= 0.2W

SC132 00

SD2921-10

MaximumThermal Resistancevs Case
Temperature

0.75

0.7

0.65

RTH(j-c) (ºC/W)

0.6

0.55
25 45 65 85

Tc, CASE TEMPERATURE (ºC)

DC Safe OperatingArea

100

50

30

20

)

(1

10

Ids(A)

5

3

2

1

1 2 5 10 20 50 100 200

(1) Currentin this area may be limited by Rds(on)

Vds(V)

5/10

SD2921-10

30 MHz Test CircuitSchematic(EngineeringTest Circuit)

V +G

30 MHz Test CircuitComponentPart List

+50V

T1 9:1 Transformer,25 ohm Flexible Coax with extra shield.090 OD15” Long
T2 1:4 Transformer,50 ohm Flexible Coax .225 OD 15” Long
FB1 Toroid, 1.7” OD.30” ID 220u4 Turns
FB2 SurfaceMount EMI Shield Bead
FB3 Toroid, 1.7” OD.300” ID 220u3 Turns
RFC1 Toroid, 0.5” OD0.30” ID, 125u4 turns 12awg wire
PCB 0.062” WovenFiberglass, 1 oz. Copper, 2 Sides, er= 2.55
C1, C4, C6, C7, C8, 0.01uF ATCChip Cap C5 470pF ATCChip Cap
C9, C11, C12, C13 0.01 uF ATCChip Cap C10 10 uF 63V Electrolytic Capacitor
C2, C3 750pF ATCChip Cap C14 100uF 63V Electrolytic Capacitor
R1, R3 1K ohm 1W ChipResistor R2 680 ohm 3W WirewoundResistor

6/10

175 MHz Test Circuit Schematic(ProductionTest Circuit)

V

G +50V

SD2921-10

Note : All dimensions in inches

REF. 1021579C

175 MHz Test Circuit ComponentPart List

T1 4:1 Transformer, 25 ohm Flexible Coax .090OD 6 ” Long
T2 1:4 Transformer, 25 ohm Semi-RigidCoax .141 OD 6 ” Long
FB1 Toroid X2, 0.5” OD .312” ID 850u 2 Turns

FB2, FB3 VK200
FB4 Shield Bead, 1” OD 0.5” ID 850u 3 Turns
L1 1/4Wave Choke, 50 ohm Semi-RigidCoax .141 OD 12 ” Long

PCB 0.062” WovenFiberglass, 1 oz. Copper, 2 Sides, er = 2.55
R1, R3 470 ohm 1W Chip Resistor R4 20K ohm 10 Turn Potentiometer
R2 360 ohm 1/2W Resistor R5 560 ohm 1W Resistor
C1, C11 470 pF ATCChip Cap C7 30 pF ATCChip Cap
C2 43 pF ATC Chip Cap C10 91 pF ATC Chip Cap
C3, C8, C9 Arco 404, 12-65 pF C12, C15 1200 pF ATCChip Cap

C4 Arco 423, 16-100 pF C13, C14 0.01 uF / 500V Chip Cap
C5 120 pF ATCChip Cap C16, C17 0.01 uF / 500V Chip Cap
C6 0.01 uF ATCChip Cap C18 10 uF 63V Electrolytic Capacitor

7/10

SD2921-10

175 MHz Test Circuit Photomaster

175 MHz Test Circuit

8/10

M174 (.500 DIA 4L N/HERM W/FLG) MECHANICALDATA

SD2921-10

DIM.

MIN. TYP. MAX. MIN. TYP. MAX.

A 5.56 5.84 0.219 0.230

B 3.18 0.125
C 6.22 6.48 0.245 0.255
D 18.28 18.54 0.720 0.730

E 3.18 0.125

F 24.64 24.89 0.970 0.980
G 12.57 12.83 0.495 0.505
H 0.08 0.18 0.003 0.007

I 2.11 3.00 0.083 0.118

J 3.81 4.45 0.150 0.175
K 7.11 0.280
L 25.53 26.67 1.005 1.050

M 3.05 3.30 0.120 0.130

mm inch

Controlling Dimension in Inches

1011000D

9/10

SD2921-10

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of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes andreplaces allinformation previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.

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