Datasheet SD2904 Datasheet (SGS Thomson Microelectronics)



HF/VHF/UHF N-CHANNELMOSFETs

■ GOLDMETALLIZATION

■ COMMONSOURCE CONFIGURATION

■ 2 - 500 MHz

■ 30 WATTS

■ 28 VOLTS

■ 9.5 dB MIN. AT 400 MHz

■ CLASSA OR AB OPERATION

■ EXCELLENTTHERMALSTABILITY

DESCRIPTION

The SD2904is a gold metallizedN-ChannelMOS
field-effect RF power transistor. It is intended for
use in 28 V DC large signal applications up to
500 MHz

SD2904

RF POWER TRANSISTORS

M113

epoxy sealed

ORDER CODE BRANDING

SD2904 SD2904

PIN CONNECTION

1. Drain 3.Gate

2. Source 4. Source

ABSOLUTE MAXIMUM RATINGS (T

Symb o l Parameter Val u e Uni t

V

(BR)DSS

V

V

P

T

Drain Source Voltage 65 V
Drain-G at e Voltage (RGS=1MΩ)

DGR

Gat e- Source Voltag e ±20 V

GS

Drain Cur re nt 5 A

I

D

Power Diss ipation 100 W

DISS

Max. Oper ating Juncti on Temperatu re 200

T

j

Storage Temperature -65 to 1 50

STG

case

=25oC)

65 V

THERMAL DATA

R

th(j-c)

R

th(c-s)

* Determined using a flat aluminum or copperheatsink with thermal compound applied (Dow Corning 340 or equivalent).

November 1999

Junct ion- Ca se Therm al Resist anc e
Case-Heat s i nk Therm al R esis tance ∗

1.75

0.30

o
o

o

C/W

o

C/W

C
C

1/8

SD2904

ELECTRICAL SPECIFICATION (T

case

=25oC)

STATIC

Symb o l Para met er Mi n . Typ . Max. Unit

V

(BR)DSSVGS

I

DSS

I

GSS

V

GS(Q)

V

DS(ON)VGS

g

FS

C

ISS

C

OSS

C

RSS

=0V IDS=30mA 65 V
VGS=0V VDS=28V 3 mA
VGS= 20V VDS=0V 2 µA
VDS= 10V ID=60mA 1.0 6.0 V

= 10V ID=3A 1.6 V
VDS= 10V ID=3A 1.2 mho
VGS=0V VDS=28V f=1MHz 47 pF
VGS=0V VDS=28V f=1MHz 35 pF
VGS=0V VDS=28V f=1MHz 7 pF

REF. 1021310H

DYNAMIC

Symb o l Para met er Mi n . Typ . Max. Unit

P

OUT

G

η

Load

Mismatch

f = 400 M H z VDD=28V IDQ=50mA 30 W
f = 400 M H z VDD=28V P

PS

f = 400 M H z VDD=28V P

D

f = 400 M H z V

DD

=28V P

=30W IDQ= 5 0 m A 9.5 11.5 dB

out

=30W IDQ=50mA 45 55 %

out

=30W IDQ=50mA

out

10:1 VSWR

All Angles

IMPEDANCEDATA

2/8

FREQ. ZIN(Ω)Z

DL

(Ω)

400MHz 2.0-j2.4 5.6+j0.4

TYPICALPERFORMANCE

SD2904

Capacitancevs Drain-SourceVoltage

1000

100

10

C, CAPACITANCES(pF)

1

0102030

VDS. DRAIN-SOURCEVOLTAGE(VOLTS)

Crss

GC82 480

f = 1 MHz

Ciss

Coss

Drain Current vs Gate Voltage

5

4

3

2

ID,DRAINCURRENT(A)

1

0

5678910

VGS, GATE-SOURCEVOLTAGE (VOLTS)

GC82500

T = -20°C

T= 25°C

T=80°C

VDS = 10V

MaximumThermalResistancevs Case
Temperature

2.1

1.9

RTH(j-c) (ºC/W)

1.7
25 40 55 70 85

Tc, CASE TEMPERATURE (ºC)

GC82 490

Gate-SourceVoltages vs CaseTemperature

1.03

ID= 750mA

ID=500mA

0.99

ID= 200mA

VDD= 10V

VGS, GATE-SOURCE VOLTAGE (NORMALIZED)

0.95

-25 0 25 50 75 100

Tc,CASE TEMPERATURE (ºC)

ID=25 mA

GC82510

ID=1 A

ID= 1.25A

3/8

SD2904

TYPICALPERFORMANCE

OutputPowervs Input Power

40

Vdd = 28 V

30

Tc= 25°C
f =400 MHz
IDQ =5 0 mA

20

Vdd = 13.5 V

10

Pout, OUTPUT POWER (W)

0

01234

Pin,INPUT POWER (W)

GC8252 0

OutputPower vs Input Power

50

40

IDQ =50 mA
VDD =28 V
f =400 MHz

30

20

10

Pout, OUTPUT POWER (W)

0

01234

Pin, INPUT POWER (W)

T = 25º C

OutputPowervs Voltage Supply OutputPower vs Gate Voltage

Pin = 4.8 W

Pin = 1.2 W

IDQ = 50 mA
f = 40 0 M Hz

GC8254 0

Pin = 2.4 W

40

VDD = 28 V

30

IDQ = 50 mA
f = 400 MHz
Pin =Co nstant

20

10

Pout, OUTPUT POWER (W)

0

-6 -4 -2 0 2 4 6

VGS,GATE-SOURCE VOLTAGE (VOLTS)

50

40

30

20

10

Pout, OUTPUTPOWER(WATTS)

0

13 18 23 28

VDD, SUPPLY VOLTAGE(VOLTS)

GC8253 0

T = -20ºC

T =80ºC

GC82550

T = -20°C

T=25°C

T=80°C

PowerGainvs Output Power

14

13

12

11

PG, POWER GAIN (dB)

10

1 6 11 16 21 26 31 36 41

4/8

Pout, OUTPUT POWER (W)

GC825 60

f =40 0 MHz
VDD =28 V
IDQ = 50 mA

Efficiencyvs OutputPower

80

60

40

f =400 MHz

EFFICIENCY (%)

20

0

1 6 11 16 21 26 31 36 41

Pout, OUTPUT POWER (W)

VDD =28 V
IDQ =50 mA

GC82570

400 MHz Test Circuit Schematic

SD2904

400 MHz Test Circuit Component Part List

5/8

SD2904

400MHz Test CircuitPhotomaster

ProductionTest Fixture

REF. 1022015B

6/8

M113 (.380 DIA 4/L N/HERM W/FLG) MECHANICAL DATA

SD2904

DIM.

MIN. TYP. MAX. MIN. TYP. MAX.

A 5.59 5.84 0.220 0.230
B 19.81 20.83 0.780 0.820
C 18.29 18.54 0.720 0.730
D 24.64 24.89 0.970 0.980
E 9.40 9.78 0.370 0.385

F 0.10 0.15 0.004 0.006
G 2.16 2.67 0.085 0.105
H 4.06 4.57 0.160 0.180

I 7.14 0.281

J 6.22 6.48 0.245 0.255

K 3.05 3.30 0.120 0.130

mm inch

ControllingDimension:Inches

1010936D

7/8

SD2904

Information furnished is believed to beaccurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise underany patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.

The ST logo is a trademark of STMicroelectronics

1999 STMicroelectronics – Printed in Italy – All Rights Reserved

STMicroelectronicsGROUP OF COMPANIES

Australia - Brazil - China - Finland - France - Germany- Hong Kong - India - Italy- Japan - Malaysia - Malta - Morocco -

Singapore- Spain - Sweden - Switzerland -United Kingdom - U.S.A.

http://www.st.com

.

8/8