Datasheet SD2900 Datasheet (SGS Thomson Microelectronics)



HF/VHF/UHF N-CHANNEL MOSFETs

■ GOLDMETALLIZATION

■ COMMONSOURCE CONFIGURATION

■ 2 - 500 MHz

■ 5 WATTS

■ 28 VOLTS

■ 13.5 dB MIN. AT400 MHz

■ CLASSA OR AB OPERATION

■ EXCELLENTTHERMALSTABILITY

DESCRIPTION

The SD2900is a gold metallizedN-ChannelMOS
field-effect RF power transistor. It is intended for
use in 28 V DC large signal applications up to
500 MHz

SD2900

RF POWER TRANSISTORS

M113

epoxy sealed

ORDER CODE BRANDING

SD2900 SD2900

PIN CONNECTION

1. Drain 3.Gate

2. Source 4. Source

ABSOLUTE MAXIMUM RATINGS (T

Symb o l Parameter Val u e Uni t

V

(BR)DSS

V

V

P

T

Drain Source Voltage 65 V
Drain-G at e Voltage (RGS=1MΩ)

DGR

Gat e- Source Voltag e ±20 V

GS

Drain Cur re nt 900 mA

I

D

Power Diss ipation 21.9 W

DISS

Max. Oper ating Juncti on Temperatu re 200

T

j

Storage Temperature -65 to 1 50

STG

case

=25oC)

65 V

THERMAL DATA

R

th(j-c)

R

th(c-s)

* Determined using a flat aluminum or copperheatsink with thermal compound applied (Dow Corning 340 or equivalent).

November 1999

Junct ion- Ca se Therm al Resist anc e
Case-Heat s i nk Therm al R esis tance ∗

8.0

0.30

o
o

o

C/W

o

C/W

C
C

1/8

SD2900

ELECTRICAL SPECIFICATION (T

case

=25oC)

STATIC

Symb o l Para met er Mi n . Typ . Max. Unit

V

(BR)DSSVGS

I

DSS

I

GSS

V

GS(Q)

V

DS(ON)VGS

g

FS

C

ISS

C

OSS

C

RSS

=0V IDS=5mA 65 V
VGS=0V VDS=28V 0.5 mA
VGS= 20V VDS=0V 1.0 µA
VDS= 10V ID=10mA 1.0 6.0 V

= 10V ID=0.5A 1.6 V
VDS= 10V ID=0.5A 0.2 mho
VGS=0V VDS=28V f=1MHz 8.5 pF
VGS=0V VDS=28V f=1MHz 7.8 pF
VGS=0V VDS=28V f=1MHz 1.4 pF

REF. 1021307I

DYNAMIC

Symb o l Para met er Mi n . Typ . Max. Unit

P

OUT

G

η

Load

Mismatch

f = 400 M H z VDD=28V IDQ=50mA 5 W
f = 400 M H z VDD=28V P

PS

f = 400 M H z VDD=28V P

D

f = 400 M H z V

DD

=28V P

=5W IDQ= 5 0 mA 13.5 16 dB

out

=5W IDQ=50mA 45 50 %

out

=5W IDQ=50mA

out

30:1 VSWR

All Angles

IMPEDANCEDATA

2/8

FREQ. ZIN(Ω)Z

DL

(Ω)

400 MHz 8.6 - j 2 4.6 22.6 + j 27.0

TYPICALPERFORMANCE

SD2900

Capacitancevs Drain-SourceVoltage

100

f = 1 MHz

10

C, CAPACITANCES (pF)

1

0102030

VDS.DRAIN-SOURCE VOLTAGE(VOLTS)

GC83130

Ciss

Coss

Crss

Drain Current vs Gate Voltage

1000

800

VDS= 10V

0

5678910

VGS, GATE-SOURCE VOLTAGE (VOLTS)

ID, DRAINCURRENT (mA)

600

400

200

T= 25°C

GC8315 0

T= -20°C

T= 80°C

MaximumThermalResistancevs Case
Temperature

10

9.5

9

8.5

RTH(j-c)(ºC/W)

8

7.5
25 45 65 85

Tc, CASETEMPERATURE (ºC)

GC8314 0

Gate-SourceVoltages vs CaseTemperature

1.04

1.02

1

0.98

0.96

VDD=10V

VGS,GATE-SOURCE VOLTAGE(NORMALIZED)

0.94

-25 0 25 50 75 100

Tc, CASE TEMPERATURE (ºC)

ID= 100m A

GC83160

ID = 7 50 mA

ID = 5 00 mA

ID= 200m A

ID = 5 0 mA

3/8

SD2900

TYPICALPERFORMANCE

OutputPowervs Input Power

8

6

Tc=25°C
f =40 0 MHz
IDQ = 50 mA

4

2

Pout, OUTPUT POWER (W)

0

10 50 90 130 17 0 210 250

Pin, INPUT POWER (mW)

GC831 80

Vdd = 28 V

Vdd =13 .5V

OutputPower vs Input Power

10

IDQ = 50 mA
VDD = 28 V

8

f = 400 MHz

6

4

2

Pout, OUTPUT POWER (W)

0

0.01 0.06 0.10 0.15 0.19 0.24

T = 25º C

Pin, INPUT POWER (W)

OutputPowervs Voltage Supply OutputPower vs Gate Voltage

Pin =0 .24 W

Pin =0.12 W

GC831 90

6

4

VDD = 28 V
IDQ = 50 mA
f = 400 MHz
Pin =Co nstant

T=25°C

8

6

IDQ = 50 mA
f = 40 0 MHz

4

GC831 70

T =-20ºC

T = 80ºC

GC83200

T =-20°C

T=80°C

2

Pout, OUTPUT POWER (WATTS)

0

13 18 23 28

VDD, SUPPLYVOLTAGE (VOLTS)

PowerGainvs Output Power

18

17

16

Tc= 25°C
f=400 MHz
IDQ= 50m A

15

PG, POWER GAIN(dB)

14

012345678

Pout, OUTPUT POWER(W)

Pin =0 .06 W

GC83210

2

Pout, OUTPUT POWER (W)

0

1.5 3 4.5 6

VGS, GATE-SOURCE VOLTAGE (VOLTS)

Efficiencyvs OutputPower

70

60

50

40

Tc= 25°C

30

EFFICIENCY(%)

20

10

02468

f = 400 MHz
IDQ = 5 0 mA

Pout,OUTPUT POWER(W)

GC832 20

4/8

400 MHz Test Circuit Schematic

SD2900

400 MHz Test Circuit Component Part List

5/8

SD2900

400 MHz Test Circuit Photomaster

ProductionTest Fixture

REF. 1021498C

6/8

M113 (.380 DIA 4/L N/HERM W/FLG) MECHANICAL DATA

SD2900

DIM.

MIN. TYP. MAX. MIN. TYP. MAX.

A 5.59 5.84 0.220 0.230
B 19.81 20.83 0.780 0.820
C 18.29 18.54 0.720 0.730
D 24.64 24.89 0.970 0.980
E 9.40 9.78 0.370 0.385

F 0.10 0.15 0.004 0.006
G 2.16 2.67 0.085 0.105
H 4.06 4.57 0.160 0.180

I 7.14 0.281

J 6.22 6.48 0.245 0.255

K 3.05 3.30 0.120 0.130

mm inch

ControllingDimension:Inches

1010936D

7/8

SD2900

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of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise underany patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.

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