Datasheet SD263C..S50L Series DataSheet (Vishay)

DO-200AB (B-PUK)

PRODUCT SUMMARY

I

F(AV)

SD263C..S50L Series

Vishay High Power Products

Fast Recovery Diodes

(Hockey PUK Version), 375 A

FEATURES

• High power FAST recovery diode series

• 4.5 µs recovery time

• High voltage ratings up to 4500 V

• High current capability

• Optimized turn-on and turn-off characteristics

• Low forward recovery

• Fast and soft reverse recovery

• Press PUK encapsulation

• Case style conform to JEDEC DO-200AB (B-PUK)

• Maximum junction temperature 125 °C

• Lead (Pb)-free

375 A

TYPICAL APPLICATIONS

• Snubber diode for GTO

• High voltage freewheeling diode

• Fast recovery rectifier applications

RoHS

COMPLIANT

MAJOR RATINGS AND CHARACTERISTICS

PARAMETER TEST CONDITIONS VALUES UNITS

I

F(AV)

I

F(RMS)

I

FSM

V

RRM

t

rr

T

J

T

hs

50 Hz 5500

60 Hz 5760

Range 3000 to 4500 V

T

J

375 A

55 °C

408

4.5 µs

125

- 40 to 125

ELECTRICAL SPECIFICATIONS

VOLTAGE RATINGS

V

TYPE NUMBER

SD263C..S50L

, MAXIMUM REPETITIVE

VOLTAGE

CODE

30 3000 3100

36 3600 3700

40 4000 4100

45 4500 4600

RRM

PEAK REVERSE VOLTAGE

V

V

, MAXIMUM NON-REPETITIVE

RSM

PEAK REVERSE VOLTAGE

V

I

AT T

A

°C

MAXIMUM

RRM

= TJ MAXIMUM

J

mA

50

Document Number: 93173 For technical questions, contact: [e-mail]
Revision: 14-May-08 1

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SD263C..S50L Series

Vishay High Power Products

Fast Recovery Diodes

(Hockey PUK Version), 375 A

FORWARD CONDUCTION

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum average forward current
at heatsink temperature

Maximum RMS forward current I

Maximum peak, one-cycle forward,
non-repetitive surge current

Maximum I

Maximum I

2

t for fusing I2t

2

√t for fusing I2√t t = 0.1 to 10 ms, no voltage reapplied 1510 kA2√s

Low level value of threshold voltage V

High level value of threshold voltage V

Low level value of forward
slope resistance

High level value of forward
slope resistance

Maximum forward voltage drop V

I

F(AV)

F(RMS)

I

FSM

F(TO)1

F(TO)2

r

f1

r

f2

FM

180° conduction, half sine wave
Double side (single side) cooled

25 °C heatsink temperature double side cooled 725

t = 10 ms

t = 8.3 ms 5760

t = 10 ms

t = 8.3 ms 4850

t = 10 ms

t = 8.3 ms 138

t = 10 ms

t = 8.3 ms 98

(16.7 % x π x I
(I > π x I

(16.7 % x π x I

(I > π x I

No voltage
reapplied

50 % V

RRM

reapplied

No voltage

Sinusoidal half wave,
initial T

= TJ maximum

J

reapplied

50 % V

RRM

reapplied

< I < π x I

F(AV)

), TJ = TJ maximum 1.71

F(AV)

< I < π x I

F(AV)

), TJ = TJ maximum 1.53

F(AV)

), TJ = TJ maximum 1.56

F(AV)

), TJ = TJ maximum 1.64

F(AV)

Ipk = 1000 A, TJ = TJ maximum,
t

= 10 ms sinusoidal wave

p

375 (150) A

55 (85) °C

5500

4630

151

107

3.20 V

A

kA2s

V

mΩ

RECOVERY CHARACTERISTICS

TYPICAL VALUES

AT TJ = 150 °C

AT 25 % I

(µs)

RRM

Q

(µC)

I

FM

rr

I

rr

(A)

t

rr

dir

dt

I

RM(REC)

CODE

MAXIMUM VALUE

= 25 °C

AT T

J

AT 25 % I

t

rr

RRM

(µs)

TEST CONDITIONS

I

pk

SQUARE

PULSE

dI/dt

(A/µs)

(1)

V

t

r

rr

(V)

(A)

S50 5.0 1000 100 - 50 4.5 680 240

Note

(1)

dI/dt = 25 A/µs, TJ = 25 °C

THERMAL AND MECHANICAL SPECIFICATIONS

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum junction operating
temperature range

Maximum storage temperature range T

Maximum thermal resistance,
junction to heatsink

Mounting force, ± 10 % 9800 (1000) N (kg)

Approximate weight 230 g

Case style See dimensions - link at the end of datasheet DO-200AB (B-PUK)

R

T

J

Stg

thJ-hs

- 40 to 125

- 40 to 150

DC operation single side cooled 0.11

DC operation double side cooled 0.05

°C

K/W

t

Q

rr

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Document Number: 93173

2 Revision: 14-May-08

SD263C..S50L Series

Fast Recovery Diodes

(Hockey PUK Version), 375 A

ΔR

CONDUCTION ANGLE

Note

• The table above shows the increment of thermal resistance R

CONDUCTION

thJ-hs

SINUSOIDAL CONDUCTION RECTANGULAR CONDUCTION

SINGLE SIDE DOUBLE SIDE SINGLE SIDE DOUBLE SIDE

180° 0.012 0.011 0.008 0.008

120° 0.014 0.015 0.014 0.014

90° 0.018 0.018 0.019 0.019

60° 0.026 0.027 0.027 0.028

30° 0.045 0.046 0.046 0.046

130

120

110

100

90

80

70

60

50

40

30

20

10

050100150200250300

Maximum Allowable Heatsink Temperature (°C)

Average Forward Current (A)

SD263C..S50L Series
(Single Side Cooled)
R (DC) = 0.11 K/W

thJ-hs

Conduction Angle

90°

60°

30°

120°

180°

Fig. 1 - Current Ratings Characteristics

Vishay High Power Products

TEST CONDITIONS UNITS

= TJ maximum K/W

T

J

when devices operate at different conduction angles than DC

thJ-hs

130

120

110

100

90

80

70

60

50

40

30

20

10

0 100 200 300 400 500

Maxim um Allowable Heatsink Temperature (°C)

A ver a g e Fo rw a rd C u rre nt (A )

Fig. 3 - Current Ratings Characteristics

SD 2 63C ..S50 L S e ries
(D o uble Side C oo le d )
R (D C ) = 0 .0 5 K /W

th J-hs

Conduction Angle

30°

60°

90°

120°

180°

130

120

110

100

90

80

70

60

50

40

30

20

10

0 50 100 150 200 250 300 350 400 450

Maxim um Allowable Heatsink Tem perature (°C )

SD263C ..S50L Series
(Single Side Cooled)
R ( D C ) = 0 .1 1 K / W

th J-hs

Conduction Period

30°

60°

90°

120°

180°

Average Forw ard Current (A)

Fig. 2 - Current Ratings Characteristics

DC

130

120

110

100

90

80

70

60

50

40

30

20

10

Maximum Allowable Heatsink Temperature (°C)

30°

0200400600800

Average Forward Current (A)

SD263C..S50L Series
(Double Side Cooled)
R (D C) = 0.05 K/W

thJ-h s

Conduction Period

60°

90°

120°

180°

DC

Fig. 4 - Current Ratings Characteristics

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Revision: 14-May-08 3

SD263C..S50L Series

Vishay High Power Products

1600

1400

1200

1000

Maximum Average Forward Power Loss (W)

2250

2000

1750

1500

1250

1000

Maximum Average Forward Power Loss (W)

180°
120°

90°
60°
30°

800

600

400

200

0

0 100 200 300 400 500

Ave rage Fo rwa rd C urre nt (A)

RMS Limit

Con duc tion An gle

SD263C..S50L Series
T = 125°C

J

Fig. 5 - Forward Power Loss Characteristics

DC
180°
120°

90°

60°

30°

RMS Limit

750

500

250

0

0 100 2 00 3 00 400 50 0 60 0 700 80 0

Average Forw ard Current (A)

Conduction Period

SD 26 3C ..S50L Se rie s
T = 125°C

J

Fig. 6 - Forward Power Loss Characteristics

Fast Recovery Diodes

(Hockey PUK Version), 375 A

6000

5000

4000

3000

2000

Peak Half Sin e Wave Forward Current (A)

1000

Fig. 8 - Maximum Non-Repetitive Surge Current

10000

1000

Instantaneous Forw ard Current (A)

100

Fig. 9 - Forward Voltage Drop Characteristics

Ma ximu m No n R e pe tit ive Su rg e C u rre nt

SD 26 3C ..S50L Se ries

0.01 0.1 1

Versus Pulse Train Duration.

50% Rated V Re applie d

Pulse Train Duration (s)

Initial T = 1 25°C

N o V o lt a g e R e a pp l ie d

RRM

J

Single and Double Side Cooled

T = 25°C

J

T = 125°C

J

SD263C..S50L Se ries

12345678

Instantaneous Forw ard Voltage (V)

5500

At Any Rated Load Condition And W ith

50 % R a te d V Ap p lied F ollo w ing Su rg e

5000

4500

4000

3500

3000

2500

2000

1500

SD263C..S50L Series

Pe a k Ha lf Sine W a ve Fo rw a rd C u rre nt (A)

1000

Number Of Equal Amplitude Half Cycle Curren t Pulses (N)

RRM

Init ial T = 1 25 °C

J

@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s

Fig. 7 - Maximum Non-Repetitive Surge Current

001011

1

Steady State V alue

R = 0.11 K/W

th J-hs

(Single Side Coo le d )

R = 0.05 K/W

th J -h s

Tra nsien t Th erm a l Im pedan ce Z (K/ W )

Fig. 10 - Thermal Impedance Z

th J-hs

0.1
(D ouble Side Cooled)

(D C O p e ra tion)

0.01

SD 263C ..S50L Series

0.001

0.00 1 0.01 0 .1 1 10

Sq ua re W a ve Pulse D uratio n (s)

thJ-hs

Characteristic

Single and Double Side Cooled

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Document Number: 93173

4 Revision: 14-May-08

SD263C..S50L Series

Fast Recovery Diodes

(Hockey PUK Version), 375 A

500

450

400

350

300

250

200

150

Fo rw a rd R ec ov ery (V )

100

50

9

SD 263C ..S50L Se ries

8

T = 125 °C; V > 100V

J

7

6

5

4

3

Maximum Reverse Recovery Time - Trr (µs)

2

10 100 1000

Rate Of Fall Of Forward Current - di/dt (A/µs)

Fig. 12 - Recovery Time Characteristics

V

FP

0

0 200 400 6 00 80 0 1 00 0 120 0 1400 1600 18 00 20 00

Fig. 11 - Typical Forward Recovery Characteristics

r

I = 1 0 0 0 A

FM

Sin e Pu lse

500 A

150 A

I

T = 125°C

J

SD263C ..S50L Series

Rate O f Rise Of Fo rwa rd Current - di/dt (A /us)

Vishay High Power Products

T = 25°C

J

600

500

400

300

200

100

0

M a ximu m Re verse R e c ove ry C urre n t - Irr (A)

Rate Of Fall Of Forward Current - di/dt (A/µs)

Fig. 14 - Recovery Current Characteristics

I = 1000 A

FM

Sine Pu lse

500 A

150 A

SD 263C ..S50L S eries
T = 125 °C ; V > 100V

J

r

0 50 100 15 0 20 0 2 50 3 0 0

1400

1200

1000

I = 1000 A

FM

Sine Pulse

500 A

800

600

150 A

400

200

0

Maximum Reverse Recovery Charge - Qrr (µC)

R ate O f Fall Of Fo rwa rd Cur rent - d i/dt (A/µs )

SD 263 C..S50 L Se ries
T = 1 25 °C ; V > 100V

J

r

0 50 100 150 200 250 300

Fig. 13 - Recovery Charge Characteristics

1E4

10 jo ules per pulse

6

4

2

1

1E3

Peak Forward C urre nt (A)

1E2

1E1 1E2 1E3 1E4

0.5

0.3

SD263C..S50L Series
Sinu soida l Pulse
T = 125°C, V = 1500V

J

tp

dv/dt = 1000V/µs

RRM

Pul se B a sew idt h (µs )

Fig. 15 - Maximum Total Energy Loss Per Pulse Characteristics

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Revision: 14-May-08 5

SD263C..S50L Series

Vishay High Power Products

1E4

200

400

1000

1500

1E3

Peak Forward Current (A)

1E2

1E1 1 E2 1 E3 1E4

1E4

1E3

Peak Forward Current (A)

1E2

1E1 1E2 1 E3 1E4

Fig. 17 - Maximum Total Energy Loss

2000

3000

4000

6000

10000

SD263C..S50L Series
Sinu soid al Pulse
T = 55°C , V = 1500V

C

tp

dv/dt = 1000V/u s

RR M

Pulse Basew idth (µs)

Fig. 16 - Frequency Characteristics

SD2 63C ..S50L Se ries
Trapezoid al P uls e
T = 125°C , V = 1500V

J

dv/dt = 1000V/µs

tp

di/dt = 300A/µs

10 jo ules per pulse

6

4

2

1

0.5

0.3

Pulse Basewidth (µs)

Per Pulse Characteristics

Fast Recovery Diodes

(Hockey PUK Version), 375 A

1E4

100

50 Hz

1E3

Peak Forward Current (A)

1E2

1E1 1E2 1E3 1E4

1E4

RRM

1E3

Peak Forward Current (A)

1E2

1E1 1E2 1 E3 1E4

200

400

600

1000

1500

200 0

3000

4000

SD263C..S50L Series
Tra p ezo ida l Pu lse
T = 5 5°C, V = 15 00 V

C

dv/dt = 1000V/us,
di/dt = 300A/us

Pulse B ase width (µs)

Fig. 18 - Frequency Characteristics

SD263C..S50L S eries
Tra pe zoid al P u lse
T = 125°C, V = 1500V

J

dv/d t = 1000V/µ s
di/dt = 100A /µs

RRM

10 joules per pulse

6

4

2

1

0.5

0.3

Pulse Basewidth (µs)

Fig. 19 - Maximum Total Energy Loss

Per Pulse Characteristics

100

tp

50 H z

RRM

tp

1E4

tp

50 H z

100

200

1E3

1500

2000

Peak Forward Current (A)

1E2

1E1 1E2 1E3 1E4

3000

4000

6000

1000

600

400

SD263C..S50L Series
Trap ezoidal Pulse
T = 55°C, V = 1500V
dv/dt = 1000V/us,
di/dt = 100A/us

RRM

C

Pulse Basew idth (µs)

Fig. 20 - Frequency Characteristics

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Document Number: 93173

6 Revision: 14-May-08

SD263C..S50L Series

(Hockey PUK Version), 375 A

ORDERING INFORMATION TABLE

Device code

SD 26 3 C 45 S50 L

1

- Diode

2

- Essential part number

3

- 3 = Fast recovery

4

- C = Ceramic PUK

5

- Voltage code x 100 = V

6

-trr code

7

- L = PUK case DO-200AB (B-PUK)

Fast Recovery Diodes

51324

RRM

Vishay High Power Products

67

(see Voltage Ratings table)

Document Number: 93173 For technical questions, contact: [e-mail]
Revision: 14-May-08 7

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DIMENSIONS in millimeters (inches)

3.5 (0.14) DIA. NOM. x

1.8 (0.07) deep MIN. both ends

Outline Dimensions

Vishay High Power Products

DO-200AB (B-PUK)

58.5 (2.30) DIA. MAX.

0.8 (0.03)
both ends

25.4 (1)

26.9 (1.06)

Quote between upper and lower pole pieces has to be considered after

application of mounting force (see Thermal and Mechanical Specifications)

34 (1.34) DIA. MAX.

2 places

53 (2.09) DIA. MAX.

Document Number: 95246 For technical questions concerning discrete products, contact: [e-mail]
Revision: 05-Nov-07 For technical questions concerning module products, contact: [e-mail]

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1

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Vishay

Notice

The products described herein were acquired by Vishay Intertechnology, Inc., as part of its acquisition of
International Rectifier’s Power Control Systems (PCS) business, which closed in April 2007. Specifications of the
products displayed herein are pending review by Vishay and are subject to the terms and conditions shown below.

Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or
anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.

Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.

The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify Vishay for any damages resulting from such improper use or sale.

®

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are registered trademarks of International Rectifier Corporation in the U.S. and other countries. All other product
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