Datasheet SD233N45S50PTC, SD233R30S50MC, SD233R30S50MSC, SD233R30S50MTC, SD233R30S50PC Datasheet (International Rectifier)

DISCRETE POWER DIODES and THYRISTORS

DATA BOOK

235A

FAST RECOVERY DIODES Stud Version

SD233N/R SERIES

Bulletin I2094/A

Features

High power FAST recovery diode series

4.5 µs recovery time
High voltage ratings up to 4500V
High current capability
Optimized turn on and turn off characteristics
Low forward recovery
Fast and soft reverse recovery
Compression bonded encapsulation
Stud version case style B-8
Maximum junction temperature 125°C

Typical Applications

Snubber diode for GTO
High voltage free-wheeling diode
Fast recovery rectifier applications

I

F(AV)

235 A

@ T

C

60 °C

I

F(RMS)

370 A

I

FSM

@ 50Hz 5500 A
@ 60Hz 5760 A

I

2

t @ 50Hz 151 KA2s

@ 60Hz 138 KA

2

s

V

RRM

range 3000 to 4500 V

t

rr

4.5 µs

@ T

J

125 °C

T

J

-40 to 125 °C

Parameters SD233N/R Units

Major Ratings and Characteristics

case style

B-8

SD233N/R Series

2222222222222

12

Voltage V

RRM

max. repetitive V

RSM

, maximum non- I

RRM

max.

Type number Code peak and off-state voltage repetitive peak voltage T

J

= 125°C

V V mA

30 3000 3100
36 3600 3700
40 4000 4100
45 4500 4600

ELECTRICAL SPECIFICATIONS

Voltage Ratings

SD233N/R 50

I

F(AV)

Max. average forward current 235 A 180 ° conduction, half sine wave.
@ Case temperature 60 °C

I

F(RMS)

Max. RMS current 370 A @ 45°C case temperature

I

FSM

Max. peak, one-cycle 5500 t = 10ms No voltage
non-repetitive forward current 5760 t = 8.3ms reapplied

4630 t = 10ms 50% V

RRM

4840 t = 8.3ms reapplied Sinusoidal half wave,

I

2

t Maximum I2t for fusing 151 t = 10ms No voltage Initial TJ = TJ max.

138 t = 8.3ms reapplied
107 t = 10ms 50% V

RRM

98 t = 8.3ms reapplied

I

2

√t Maximum I2√t for fusing 1510 KA2√s t = 0.1 to 10ms, no voltage reapplied

V

F(TO)1

Low level of threshold voltage 1.56 (16.7% x π x I

F(AV)

< I < π x I

F(AV)

), TJ = TJ max.

V

F(TO)

2

High level of threshold voltage 1.68 (I > π x I

F(AV)

), TJ = TJ max.

r

f1

Low level of forward slope resistance 1.64 (16.7% x π x I

F(AV)

< I < π x I

F(AV)

), TJ = TJ max.

r

f2

High level of forward slope resistance 1.53 (I > π x I

F(AV)

), TJ = TJ max.

V

FM

Max. forward voltage 3.2 V Ipk= 1000A, TJ = 125°C, tp = 400 µs square pulse

Parameter SD233N/R Units Conditions

Forward Conduction

KA2s

A

mΩ

V

Test conditions Max. values @ T

J

= 125 °C

Code

(µs) (A) (A/µs) (V) (µs) (µC) (A)

Recovery Characteristics

S50 5.0 1000 100 - 50 4.5 680 240

(*) di/dt = 25A/us @ TJ = 25°C

T

J

= 25 oC

typical t

rr

I

pk

di/dt (*) V

r

t

rr

Q

rr

I

rr

@ 25% I

RRM

Square Pulse @ 25% I

RRM

SD233N/R Series

Fig. 4 - Forward Power Loss Characteristics

Fig. 3 - Forward Power Loss Characteristics

Fig. 6 - Maximum Non-repetitive Surge CurrentFig. 5 - Maximum Non-repetitive Surge Current

Fig. 1 - Current Ratings Characteristics Fig. 2 - Current Ratings Characteristics

SD233N/R Series

Fig. 9 - Typical Forward Recovery Characteristics

Fig. 12 - Recovery Current CharacteristicsFig. 11 - Recovery Charge CharacteristicsFig. 10 - Recovery Time Characteristics

Fig. 7 - Forward Voltage Drop Characteristics

Fig. 8 - Thermal Impedance Z

thJC

Characteristic

SD233N/R Series

Fig. 16 - Frequency CharacteristicsFig. 15 - Maximum Total Energy Loss Per Pulse Characteristics

Fig. 17 - Maximum Total Energy Loss Per Pulse Characteristics Fig. 18 - Frequency Characteristics

Fig. 14 - Frequency Characteristics

Fig. 13 - Maximum Total Energy Loss Per Pulse Characteristics

SD233N/R Series

23

Thermal and Mechanical Specification

Parameter SD233N/R Units Conditions

°C

T

J

Max. operating temperature range -40 to 125

T

stg

Max. storage temperature range -40 to 150

R

thJC

Max. thermal resistance, junction to case 0.1 DC operation

R

thCS

Max. thermal resistance, case to heatsink 0.04 Mounting surface, smooth, flat and greased
T Mounting torque ± 10% 50 Not lubricated threads
wt Approximate weight 454 g

Case style B-8 See Outline Table

K/W

Nm

180° 0.010 0.008 TJ = TJ max.
120° 0.013 0.014

90° 0.017 0.018 K/W
60° 0.025 0.026
30° 0.041 0.042

Conduction angle Sinusoidal conduction Rectangular conduction Units Conditions

∆R

thJC

Conduction

(The following table shows the increment of thermal resistence R

thJC

when devices operate at different conduction angles than DC)

1 - Diode
2 - Essential part number
3 - 3 = Fast recovery
4 - N = Stud Normal Polarity (Cathode to Stud)

R = Stud Reverse Polarity (Anode to Stud)

5 - Voltage code: Code x 100 = V

RRM

(see Voltage Ratings table)

6 - t

rr

code (see Recovery Characteristics table)

7 - P = Stud base B-8 3/4" 16UNF-2A

M = Stud base B-8 M24 X 1.5

8 -7 S = Isolated lead with silicone sleeve

(Red = Reverse Polarity; Blue = Normal Polarity)
T = Threaded Top Terminal 3/8" 24UNF-2A
None = Not isolated lead

9 - C = Ceramic housing

51 2

3

4

SD 23 3 N 45 S50 P S C

7

6

8 9

Device Code

Ordering Information Table

SD233N/R Series

2222222222222

12

Outlines Table

Case Style B-8

All dimensions in millimeters (inches)

Case Style B-8 with top thread terminal 3/8"

All dimensions in millimeters (inches)

26 (1.023) MAX.

10.5 (0.41) DIA.

12 (0.47) MIN.

38 (1.5)

DIA. MAX.

CERAMIC HOUSING

SW 45

C.S. 70mm

5(0.20) ± 0.3(0.01)

2

3/4"-16UNF-2A *

* FOR METRIC DEVICE: M24 x 1.5 - SCREW LENGTH — 21(0.83) MAX.

38 (1.5)

DIA. MAX.

CERAMIC HOUSING

SW 45

3/4"-16UNF-2A *

3/8"-24UNF-2A

17 (0.67) DIA.

* FOR METRIC DEVICE: M24 x 1.5 - SCREW LENGTH — 21(0.83) MAX.