Datasheet SD211DE, SD213DE, SD215DE Datasheet (Linear Integrated System Linear Systems)

Linear Integrated Systems

Product Summary

SD-SST211/213/215

N-CHANNEL LATERAL

DMOS SWITCH

ZENER PROTECTED

Features Benefits Applications

• Ultra-High Speed Switching—tON: 1 ns • High-Speed System Performance • Fast Analog Switch

• Ultra-Low Reverse Capacitance: 0.2 pF • Low Insertion Loss at High Frequencies • Fast Sample-and-Holds

• Low Guaranteed rDS @5 V • Low Transfer Signal Loss • Pixel-Rate Switching

• Low Turn-On Threshold Voltage • Simple Driver Requirement • DAC Deglitchers

• N-Channel Enhancement Mode • Single Supply Operation • High-Speed Driver

Description

The SD211DE/SST211 series consists of enhancement-mode
MOSFETs designed for high speed low-glitch switching in audio,
video, and high-frequency applications. The SD211 may be used
for ±5-V analog switching or as a high speed driver of the SD214.
The SD214 is normally used for ±10-V analog switching. These
MOSFETs utilize lateral construction to achieve low capacitance

and ultra-fast switching speeds. An integrated Zener diode
provides ESD protection. These devices feature a poly-silicon
gate for manufacturing reliability.

For similar products see: quad array—SD5000/5400 series, and
non-Zener protection—SD210DE/214DE.

Linear Integrated Systems

• 4042 Clipper Court • Fremont, CA 94538 • Tel: [phone] • Fax: [phone]

Absolute Maximum Ratings (TA = 250C Unless Otherwise Noted)

Gate-Drain, Gate-Source Voltage (SD211DE/SST211)................... -30/25 V

Gate-Substrate Voltage

Drain-Source Voltage (SD211DE/SST211).......................... 30 V

Source-Drain Voltage (SD211DE/SST21) ........................... 10 V

a

Specifications

(SD213DE/SST213) .................. -15/25 V

(SD215DE/SST215) .................. -25/30 V

(SD211DE/SST211 ................... -0.3/25 V

(SD213DE/SST213) ................. -0.3/25 V

(SD215DE/SST215) ................. -0.3/30 V

(SD213DE/SST213) .........................10 V

(SD215DE/SST215) .........................20 V

(SD213DE/SST213) .........................10 V

(SD215DE/SST215) .........................20 V

a

Drain-Substrate Voltage (SD211DE/SST211).......................... 30 V

Source-Substrate Voltage (SD211DE/SST211).......................... 15 V

Drain Current ........................................................................................ 50 mA

Lead Temperature (1/16” from case for 10 seconds) ............................. 300

Storage Temperature.................................................................... -65 to 150

Operating Junction Temperature ................................................. -55 to 125

Power Dissipation
Notes:

a. Derate 3 mW/

a

....................................................................................................................................

0

C above 250C

(SD213DE/SST213) ......................... 15 V

(SD215DE/SST215) ......................... 25 V

(SD213DE/SST213) ......................... 15 V

(SD215DE/SST215) ......................... 25 V

300 mW

0

C

0

C

0

C

Linear Integrated Systems

• 4042 Clipper Court • Fremont, CA 94538 • Tel: [phone] • Fax: [phone]

Specifications

a

Notes:
a. TA = 250C unless otherwise noted.
b. B is the body (substrate) and V
c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.

is breakdown.

(BR)

Linear Integrated Systems

• 4042 Clipper Court • Fremont, CA 94538 • Tel: [phone] • Fax: [phone]