Datasheet SD210DE, SD214DE Datasheet (Linear Integrated System Linear Systems)

Linear Integrated Systems

Product Summary

Features Benefits Applications

• Ultra-High Speed Switching—tON: 1 ns • High-Speed System Performance • Fast Analog Switch

• Ultra-Low Reverse Capacitance: 0.2 pF • Low Insertion Loss at High Frequencies • Fast Sample-and-Holds

• Low Guaranteed rDS @5 V • Low Transfer Signal Loss • Pixel-Rate Switching

• Low Turn-On Threshold Voltage • Simple Driver Requirement • DAC Deglitchers

• N-Channel Enhancement Mode • Single Supply Operation • High-Speed Driver

SD210DE/214DE

N-CHANNEL LATERAL

DMOS SWITCH

Description

The SD210DE/214DE are enhancement-mode MOSFETs
designed for high speed low-glitch switching in audio, video,
and high-frequency applications. The SD214DE is normally used
for ±10-V analog switching. These MOSFETs utilize lateral
construction to achieve low capacitance and ultra-fast switching
speeds. These MOSFETs do not have a gate protection Zener

diode which results in lower gate leakage and ± voltage capability
from gate to substrate. A poly-silicon gate is featured for
manufacturing reliability.

For similar products see: quad array—SD5000/5400 series, and
Zener protected—SD211DE/SST211 series.

Absolute Maximum Ratings (TA = 250C Unless Otherwise Noted)

Gate-Drain, Gate-Source Voltage ......................................................... ± 40 V

Gate-Substrate Voltage ......................................................................... ± 30 V

Drain-Source Voltage (SD210DE) ....................................... 30 V

(SD214DE) .......................................20 V

Source-Drain Voltage (SD210DE) ....................................... 10 V

(SD214DE) .......................................20 V

Drain-Substrate Voltage (SD210DE) .......................................30 V

(SD214DE) .......................................25 V

Source-Substrate Voltage (SD210DE) .......................................15 V

Drain Current ........................................................................................ 50 mA

Lead Temperature (1/16” from case for 10 seconds) ............................. 3000C

Storage Temperature.................................................................... -65 to 1500C

Operating Junction Temperature ................................................. -55 to 1250C

Power Dissipation
Notes:

a. Derate 3 mW/

a

....................................................................................................................................

0

C above 250C

(SD214DE) .......................................25 V

300 mW

Linear Integrated Systems

• 4042 Clipper Court • Fremont, CA 94538 • Tel: [phone] • Fax: [phone]

Specifications

a

Notes:
a. TA = 250C unless otherwise noted.
b. B is the body (substrate) and V
c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.

is breakdown.

(BR)

Linear Integrated Systems

• 4042 Clipper Court • Fremont, CA 94538 • Tel: [phone] • Fax: [phone]