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N-Channel Depletion Mode
Lateral DMOS FET
SD2100 / SST2100
CORPORATION
FEATURES
Fast Switching . . . . . . . . . . . . . . . . . . . . . . . . . tON 1.0ns
••
Low Capaci t a nce . . . . . . . . . . . . . . . . . . . . . . . . . c
••
Low RON. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50Ω
••
APPLICATIONS
Analo g Sw it c h es
••
Amplifiers
••
CONNECTION DIAGRAMS
3
2
4
1
rss
2pf
DESCRIPTION
The SD2100/SST2100 is a depletion mode DM OS la tera l FET
that provides ultra high speed switching with very low
capacitance. The product is available in TO-72 and surface
mount SOT- 143.
ORDERING INFORMATION
Part Package Temperature Range
o
SD2100 TO-72 -55
SST2100 SOT-143 -55
XSD2100 Sorte d C h ips in Ca r ri er s -55
TO-72
SOURCE
1
DRAIN
2
GATE
3
SUBSTRATE
4
3
4
2
1
C to +125oC
o
C to +125oC
o
C to +125oC
3
2
4
1
BOTTOM VIEW
CD1-2
GATE
(3)
DRAIN
(2)
BODY
(4)
SOURCE
(1)
PART MARKING (SOT -231)
SST2100 D10
SOURCE
DRAIN
1
2
BODY IS INTERNALLY
CONNECTED TO THE CASE
(TOP VIEW)
4
3
BODY
AND CASE
GATE
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SD2100 / SST2100
CORPORATION
ABSOLUTE MAXIMUM RATINGS (TA = 25oC unless otherwise noted)
SYMBOL PARAMETERS/TEST CONDITIONS LIMITS UNITS
V
GS
V
DS
I
D
P
D
Gate-Source Voltage ±25
Drain-Source Voltage 25
Drain Current 50 mA
Power Dissipation 300 mW
Power Derating 2.4 mW/
T
J
T
stg
T
L
Operating Junction Temperature -55 to 150
Storage Temperature -55 to 150
Lead Temperature (1/16" from case for 10 sec.) 300
ELECTRICAL CHARACTERISTIC S (TA = 25oC unless otherwise note d)
SYMBOL PARAMETER TYP
STATIC
V
(BR)DS
I
GSS
I
DSS
V
GS(OFF
V
GS
r
DS(ON)
Drain-Source Breakdown Voltage 25 15 V VGS = VBS = -5V, ID = 1µA
Gate Reverse Current ±0.05 ±1nAV
Saturation Drain Current 7 0.5 10 mA VDS = 10V, VGS = VBS = 0V
) Gate-Source Cutoff -1.5 -2
Gate-Source Voltage
Drain-Source On-Resistance
DYNAMIC
1
MIN MAX UNIT TEST CONDITIONS
-0.3 -1 1
0.4 0 1.5 I
120 200
40 50 V
= ±25V , VDS = VBS = 0V
GS
VDS = 10V, ID = 1µA, VBS = 0V
V
V
= 10V
DG
V
= 0V
BS
I
= 100µA
Ω
D
V
= 0V
BS
V
o
C
I
= 5mA
D
= 10mA
D
V
= 0V
GS
= 5V
GS
o
C
g
fs
g
os
g
fs
g
os
C
iss
C
rss
Forward Transconductance 8000 1000
Output Conductance 250 500
Forward Transconductance 10000 7000
Output Conductance 350 500
Common-Source Input Capacitance 5 6
Reverse Transfer Capacitance 1 2
SWITCHING
t
d(ON)
t
r
t
OFF
Turn-ON Time
Turn-OFF Time 5
Note1: For design aid only, not subject to production testing.
0.7
0.4
µS
pF V
ns V
= 10V, VGS = VBS = 0V, f = 1kHz
V
DS
= 10V , VBS = 0V, ID = 10mA, f = 1kHz
V
DG
= 10V, f = 1MHz, VGS = VBS = -5V
DS
= 5V, RL = 680Ω, VIN = -4V to -2V
DD
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