Datasheet VS-SD200N16PC, SD200N16PC Specification

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DO-30 (DO-205AC)

Standard Recovery Diodes,

PRIMARY CHARACTERISTICS

I

F(AV)

Package DO-30 (DO-205AC)

Circuit configuration Single

(Stud Version), 200 A

FEATURES

• Wide current range

• High voltage ratings up to 2400 V

• High surge current capabilities

• Stud cathode and stud anode version

•Standard JEDEC

• Compression bonded encapsulations

• Designed and qualified for industrial level

• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912

TYPICAL APPLICATIONS

• Converters

200 A

• Power supplies

• Machine tool controls

• High power drives

• Medium traction applications

VS-SD200N/R Series

Vishay Semiconductors

®

types

MAJOR RATINGS AND CHARACTERISTICS

PARAMETER TEST CONDITIONS

I

F(AV)

I

F(RMS)

I

FSM

2

t

I

V

RRM

T

J

T

C

50 Hz 4700 4700
60 Hz 4920 4920
50 Hz 110 110
60 Hz 101 101
Range 1600 to 2000 2400 V

ELECTRICAL SPECIFICATIONS

VOLTAGE RATINGS

, MAXIMUM REPETITIVE

V

TYPE NUMBER

VS-SD200N/R

VOLTAGE

CODE

16 1600 1700

24 2400 2500

RRM

PEAK REVERSE VOLTAGE

V

VS-SD200N/R

1600 to 2000 2400

200 200 A
110 110 °C
314 314

-40 to +180 +150 °C

V

, MAXIMUM NON-REPETITIVE

RSM

PEAK REVERSE VOLTAGE

V

UNITS

I

MAXIMUM

RRM

AT T

= TJ MAXIMUM

J

A

kA2s

mA

1520 2000 2100

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VS-SD200N/R Series

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FORWARD CONDUCTION

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum average forward current 
at case temperature

Maximum average forward current 
at case temperature

Maximum RMS forward current I

Maximum peak, one-cycle forward,
non-repetitive surge current

Maximum I

Maximum I

2

t for fusing I2t

2

Öt for fusing I2Öt t = 0.1 to 10 ms, no voltage reapplied 1100 kA2Ös

Low level value of threshold voltage V

High level value of threshold voltage V

Low level value of forward slope resistance r

High level value of forward slope resistance r

Maximum forward voltage drop V

I

F(AV)

F(RMS)

I

FSM

F(TO)1

F(TO)2

f1

f2

FM

180° conduction, half sine wave

DC at 95 °C case temperature 314
t = 10 ms
t = 8.3 ms 4920
t = 10 ms
t = 8.3 ms 4140
t = 10 ms
t = 8.3 ms 101
t = 10 ms
t = 8.3 ms 71

(16.7 % x  x I
T

= TJ maximum

J

(I >  x I
(16.7 % x  x I

T

= TJ maximum

J

(I >  x I

No voltage
reapplied

100 % V
reapplied

No voltage
reapplied

100 % V
reapplied

F(AV)

), TJ = TJ maximum 1.00

F(AV)

F(AV)

), TJ = TJ maximum 0.64

F(AV)



RRM



RRM

< I <  x I

< I <  x I

Sinusoidal half wave,
initial 
T

= TJ maximum

J

F(AV)

F(AV)

Ipk = 630 A, TJ = TJ maximum,
t

= 10 ms sinusoidal wave

p

Vishay Semiconductors

200 A
110 °C
220 A
100 °C

4700

3950

110

78

),

),

0.90

0.79

1.40 V

kA

mW

A

2

V

s

THERMAL AND MECHANICAL SPECIFICATIONS

PARAMETER SYMBOL TEST CONDITIONS

Maximum junction operating
temperature range

Maximum storage temperature range T
Maximum thermal resistance,

junction to case
Maximum thermal resistance,

case to heatsink
Maximum allowed 

mounting torque ± 10 %

R

R

T

J

Stg

thJC

thCS

DC operation 0.23

Mounting surface, smooth, flat and greased 0.08

Not-lubricated threads 14 Nm

Approximate weight 120 g
Case style See dimensions (link at the end of datasheet) DO-30 (DO-205AC)

R

CONDUCTION

thJC

CONDUCTION ANGLE SINUSOIDAL CONDUCTION RECTANGULAR CONDUCTION TEST CONDITIONS UNITS

180° 0.041 0.030
120° 0.049 0.051

T

90° 0.063 0.068

= TJ maximum K/W

J

60° 0.093 0.096
30° 0.156 0.157

Note

• The table above shows the increment of thermal resistance R

when devices operate at different conduction angles than DC

thJC

SD200N/R

1600 to 2000 2400

-40 to 180 -40 to 150

-55 to 200

UNITS

°C

K/W

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100

110

120

130

140

150

160

170

180

0 40 80 120 160 200 240

30°

60°

90°

120°

180°

Average Forward Current (A)

Conduction Angle

Maximum Allowable Case Temperature (°C)

SD200N/R Series
R (DC) = 0.23 K/W

thJC

VS-SD200N/R Series

Vishay Semiconductors

180

170

160

150

140

130

120

110

100

90

0 50 100 150 200 250 300 350

Maximum Allowable Case Temperature (°C)

Average Forward Current (A)

SD200N/R Series
R (DC) = 0.23 K/W

thJC

90°

60°

30°

120°

Conduction Period

180°

DC

Fig. 1 - Current Ratings Characteristics Fig. 2 - Current Ratings Characteristics

300

250

200

150

100

180°
120°

90°
60°
30°

RMS Limit

Conduction Angle

0.3 K/W

0.4 K/W

0.6 K/W

0.8 K/W

1.4 K/W

0.2 K/W

0.12 K/W

R

thSA

= 0.08 K/W - ΔR

Maximum Average Forward Power Loss (W)

Maximum Average Forward Power Loss (W)

50

0

0 50 100 150 200 25

SD200N/R Series

j = Tj max

T

Average Forward Current (A)

Fig. 3 - Forward Power Loss Characteristics

400

350

300

250

200

150

100

50

DC
180°
120°

90°

60°

30°

RMS Limit

0

0 50 100 150 200 250 300 35

Conduction Period

SD200N/R Series

j = Tj max

T

Average Forward Current (A)

Fig. 4 - Forward Power Loss Characteristics

1.8 K/W

0

40 60 80 100 120 140 160 180

Maximum Allowable Ambient Temperature (°C)

RthSA = 0.08 K/W - Delta R

0.12 K/W

0.2 K/W

0.3 K/W

0.4 K/W

0.6 K/W

0.8 K/W

1.4 K/W

1.8 K/W

40 60 80 100 120 140 160 180

0

Maximum Allowable Ambient Temperature (°C)

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VS-SD200N/R Series

Peak Half Sine Wave Forward Current (A)

Number Of Equal Amplitude Half Cycle Current Pulses (N)

1000

1500

2000

2500

3000

3500

4000

4500

1 10 10

SD200N/R Series

At Any Rated Load Condition And With

Rated Vrrm Applied Following Surge.

Initial Tj = Tj max.

@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s

Pulse Train Duration (s)

Peak Half Sine Wave Forward Current (A)

1000

1500

2000

2500

3000

3500

4000

4500

5000

0.01 0.1 1

Versus Pulse Train Duration.

Maximum Non Repetitive Surge Current

SD200N/R Series

Initial Tj = Tj max.

No Voltage Reapplied

Rated V

rrm

Reapplied

Instantaneous Forward Voltage (V)

Instantaneous Forward Current (A)

100

1000

10 000

0.5 1 1.5 2 2.5 3 3.5

SD200N/R Series

Tj = 25 °C

Tj = Tj max.

0.01

0.1

1

0.001 0.01 0.1 1 10

Square Wave Pulse Duration (s)

thJC

Transient Thermal Impedance Z (K/W)

Steady State Value:
R = 0.23 K/W
(DC Operation)

thJC

SD200N/R Series

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0

Fig. 5 - Maximum Non-Repetitive Surge Current Fig. 6 - Maximum Non-Repetitive Surge Current

Vishay Semiconductors

Fig. 7 - Forward Voltage Drop Characteristics

Fig. 8 - Thermal Impedance Z

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Characteristic

thJC

4

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ORDERING INFORMATION TABLE

VS-SD200N/R Series

Vishay Semiconductors

Device code

VS-

SD 20 0 N 24 P C

51 32 4

6

1 - Vishay Semiconductors product

- Diode

2

- Essential part number

3

- 0 = standard recovery

4

- N = stud normal polarity (cathode to stud)

5

R = stud reverse polarity (anode to stud)

6

- Voltage code x 100 = V

7

P = stud base DO-30 (DO-205AC) 1/2" 20UNF-2A

-

(see Voltage Ratings table)

RRM

M = stud base DO-30 (DO-205AC) M12 x 1.75

- C = ceramic housing

8

For metric device M12 x 1.75 contact factory

7

8

LINKS TO RELATED DOCUMENTS

Dimensions www.vishay.com/doc?95302

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DIMENSIONS in millimeters (inches)

Outline Dimensions

Vishay Semiconductors

DO-205AC (DO-30)

Ceramic housing

157 (6.18)
170 (6.69)

55 (2.16)

MIN.

6.5 (0.26) MIN.

DIA. 8.5 (0.33) NOM.

DIA. 22.5

(0.88) MAX.

21 (0.82)

MAX.

12.5 (0.49)
MAX.

16.5 (0.65)
MAX.

35 (1.38)

MAX.

C.S. 16 mm

(0.015 s.i.)

2.6 (0.10)
MAX.

2

SW 27

1/2"-20UNF-2A*

*For metric device: M12 x 1.75

contact factory

Document Number: 95302 For technical questions, contact: [e-mail]
Revision: 11-Apr-08 1

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