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.1.65 GHz
.28 VOLTS
.EFFICIENCY 40% MIN.
.CLASS C O PERATION
. CO MMON BASE
.P
OUT
32 W MIN. WITH 9 dB GAIN
=
SD1898
RF & MICROWAVE TRANSISTORS
1.6 GHz SATCOM APPLICAT IONS
.400 SQ. 2LF L (M186)
epoxy sealed
ORDER CODE
SD1898
PIN CONNECTION
BRANDING
1898
DESC RIPTION
The SD1898 is a 28 V Class C silicon NPN transistor designed for INMARSAT and other 1.65 GHz
SATCOM applications. A gold metallized emitterballasted die geometry is employed providing high
gain and efficiency while ensuring long term reliability and ruggedness under severe operating
conditions. SD1898 is packaged in a cost-effective
epoxy sealed housing.
ABSOLUTE MAXIMUM RATINGS (T
Symbol Parameter Value Uni t
V
V
V
P
T
CBO
CEO
EBO
I
C
DISS
T
J
STG
Collector-Base Voltage 45 V
Collector-Emitter Voltage 15 V
Emitter-Base Voltage 3.5 V
Device Current 7.8 A
Power Dissipation 87.5 W
Junction Temperature +200
Storage Temperature
case
= 25°C)
1. Collector 3. Emitter
2. Base 4. Base
65 to +150
−
°
C
°
C
THERMA L DATA
R
TH(j-c)
November 1992
Junction-Case Thermal Resistance 2.0 °C/W
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SD1898
ELECTRICAL SPECIFICATIONS (T
case
= 25°C)
STATIC
Symbol Test Conditions
BV
CBOIC
BV
CEOIC
BV
EBOIE
h
FE
= 10mA IE= 0mA 45 — — V
= 10mA IB= 0mA 12 — — V
= 10mA IC= 0mA 3.5 — — V
VCE= 5V IC= 2A 15 — 150 —
Value
Min. Typ. Max.
DYNAMIC
Symbol Test C ond itions
P
OUT
G
η
cf=1.65 GHz PIN= 4.0 W VCE= 28 V 40 — — %
f = 1.65 GHz PIN= 4.0 W VCE= 28 V 32 — — W
f = 1.65 GHz PIN= 4.0 W VCE= 28 V 9.0 — — dB
P
Value
Min. Typ. Max.
Uni t
Uni t
TYPICA L P ERFO R MA NCE
POWER OUTPU T vs POWER INPUT
EFFICIENCY vs POWER INPUT
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IMPEDA NCE D ATA
TYPICAL IN PU T
IMPEDANCE
Z
IN
TYPICAL COLLECTOR
LOAD IMPEDANCE
TEST CIRCUIT
SD1898
FREQ. ZIN(Ω)Z
1550 MHz 6.6 + j 15.0 5.6 − j2.5
1600 MHz 8.3 + j 14.5 4.7 − j1.9
1650 MHz 12.0 + j 12.0 4.1 − j1.4
Z
CL
CL
(Ω)
C1, C2 : .4 - 2.5pF Johanson Capacitor
C3 : 15,000pF EMI Filter
C4 : 1000pF Chip Capacitor
L1, L2 : 5 Turns Choke Diameter Wire .025” I.D. .125”
Substrate: Er=10.2, Height .050”, 1 Oz. Copper
All Dimensions in Inches.
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SD1898
PACKAGE MECHANICAL DATA
Ref.: Dwg. No.12-0186
Information furnished is believed to be accurate and reliable.However, SGS-THOMSON Microelectronics assumes no responsability forthe
consequences of useof such information nor forany infringement of patents orother rights of third parties which may results from its use. No
license isgranted byimplication or otherwiseunder any patentor patentrights ofSGS-THOMSON Microelectronics. Specificationsmentioned
in this publication aresubject to changewithout notice. This publication supersedes andreplaces all information previously supplied.
SGS-THOMSON Microelectronicsproducts arenot authorizedforuse ascritical componentsin life supportdevicesorsystemswithout express
written approvalof SGS-THOMSON Microelectonics.
1994 SGS-THOMSON Microelectronics- All RightsReserved
Australia - Brazil - France- Germany - Hong Kong- Italy - Japan- Korea - Malaysia -Malta - Morocco -The Netherlands -
Singapore - Spain - Sweden- Switzerland - Taiwan - Thailand - UnitedKingdom - U.S.A
SGS-THOMSON MicroelectronicsGROUP OF COMPANIES
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