.1.65 GHz
.28 VOLTS
.CLASS C OPERATION
. CO MMON BASE
.P
OUT
10 W MIN. WITH 11.0 dB GAIN
=
SD1897
RF & MICROWAVE TRANSISTORS
1.65 GHz SATCOM APPLICAT IONS
.250 x .320 2LF L (M170)
epoxy sealed
ORDER CODE
SD1897
PIN CONNECTION
BRANDING
1897
DESC RIPT ION
The SD1897 is a 28 V Class C silicon NPN transistor designed for INMARSAT and other 1.65 GHz
SATCOM applications. A gold metallized emitterballasted die geometry is employed providing high
gain and efficiency while ensuring long term reliability and ruggedness under severe operating
conditions. SD1897 is packaged in a cost-effective
epoxy sealed housing.
ABSOLUTE MAXIMUM RATINGS (T
Symbol Parameter Value Uni t
V
V
V
P
T
CBO
CEO
EBO
I
C
DISS
T
J
STG
Collector-Base Voltage 45 V
Collector-Emitter Voltage 15 V
Emitter-Base Voltage 3.5 V
Device Current 2.3 A
Power Dissipation 29 W
Junction Temperature +200
Storage Temperature
case
= 25°C)
1. Collector 3. Base
2. Emitter
65 to +150
−
°
C
°
C
THERMA L DA TA
R
July 1993
TH(j-c)
Junction-Case Thermal Resistance 6.0 °C/W
1/4
SD1897
ELECTRICAL SPECIFICA TIONS (T
case
= 25°C)
STATIC
Symbol Test Conditions
BV
CBOIC
BV
CEOIC
BV
EBOIE
h
FE
= 3mA IE= 0mA 45 — — V
= 3mA IB= 0mA 12 — — V
= 3mA IC= 0mA 3.5 — — V
VCE= 5V IC= 600mA 15 — 150 —
Min. Typ. Max.
Value
DYNAMIC
Symbol Test C ond itions
P
OUT
G
η
cf=1.65 GHz PIN= 0.8 W VCE= 28 V 48 — — %
f = 1.65 GHz PIN= 0.8 W VCE= 28 V 10 — — W
f = 1.65 GHz PIN= 0.8 W VCE= 28 V 11 — — dB
P
Value
Min. Typ. Max.
TYPICA L PERFO R MA NCE
Unit
Unit
POWER OUTPUT vs POWER INPUT
EFFICIENCY vs POWER INPUT
2/4
IMPEDA NCE DATA
TYPICAL INPUT
IMPEDANCE
Z
IN
TYPICAL COLLECTOR
LOAD IMPEDANCE
SD1897
FREQ. ZIN(Ω)Z
1600 MHz 22.0 + j 23.0 3.1 + j 4.0
1650 MHz 28.0 + j 18.0 3.0 + j 2.0
P
= 10 W
Z
CL
OUT
VCE= 28 V
PIN= 0.8 W
CL
(Ω)
TEST CIRCUIT
C1, C2 : 0.4 - 2.5pF Johanson Variable Capacitor
C3 : 100pF Chip Capacitor ATC
C4 : Suppression Filters CDI 9900381-6004
L1, L2 : 4 Turns, Choke #28 AWG .080” I.D.
Substrate: Er=10.2, Height .050”, 1 Oz. Cu.
All Dimensions in mm unless otherwise specified
3/4
SD1897
PACKAGE MECHANICAL DATA
Ref.: Dwg. No.12-0170
Information furnished is believed to be accurate and reliable.However, SGS-THOMSON Microelectronicsassumes no responsability for the
consequences of useof such information nor forany infringement of patents orother rights of third parties which may results from its use. No
license isgranted byimplication or otherwiseunder any patentor patentrights ofSGS-THOMSONMicroelectronics. Specificationsmentioned
in this publication aresubject to changewithout notice. This publication supersedes andreplaces all information previously supplied.
SGS-THOMSON Microelectronicsproducts arenot authorizedforuse ascritical componentsinlife supportdevices orsystemswithout express
written approvalof SGS-THOMSONMicroelectonics.
1994 SGS-THOMSON Microelectronics- All RightsReserved
Australia - Brazil - France- Germany - HongKong - Italy-Japan - Korea - Malaysia - Malta - Morocco - The Netherlands-
Singapore - Spain - Sweden- Switzerland - Taiwan - Thailand - UnitedKingdom - U.S.A
SGS-THOMSON MicroelectronicsGROUP OF COMPANIES
4/4
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