Page 1
RF & MICROWAVE TRANSISTORS
1.6 GHz SATCOM APPLICAT IONS
.1.65 GHz
.28 VOLTS
.OVERLAY D IE GEOMETRY
. ALL GOLD METALLIZED SYSTEM
.HIGH RELIABILITY AND RUGGEDNESS
.C O OMON BASE
. P
OUT
15 W MIN. WITH 9.2 dB GAIN
=
.250 x .320 2LF L (M170)
ORDER CODE
SD1895-03
PIN CONNECTION
SD1895-03
epoxy sealed
BRANDING
SD1895-3
DESC RIPT ION
The SD1895-03 is a28 V silicon NPN planar transistor designed for INMARSAT and other 1.6 GHz
SATCOM applications. This device utilizes polysilicon site ballasting with a gold metallized die
to achieve high reliability and ruggedness.
ABSOLUTE MAXIMUM RATINGS (T
Symbol Parameter Value Uni t
V
CBO
V
CEO
V
EBO
I
C
P
DISS
T
J
T
STG
THERMA L DA TA
R
TH(j-c)
Collector-Base Voltage 45 V
Collector-Emitter Voltage 15 V
Emitter-Base Voltage 3.0 V
Device Current 3.0 A
Power Dissipation 37.2 W
Junction Temperature +200
Storage Temperature
Junction-Case Thermal Resistance 4.7 °C/W
case
= 25°C)
1. Collector 3. Base
2. Emitter
65 to +150
−
°
C
°
C
July 1993
1/4
Page 2
SD1895-03
ELECTRICAL SPECIFICA TIONS (T
case
= 25°C)
STATIC
Symbol Test Conditions
BV
BV
BV
h
CBO
CEO
EBO
FE
IC= 5mA IE=0mA 45 — — V
IC= 5mA IB=0mA 12 — — V
IE= 5mA IC=0 mA 3.0 — — V
VCE= 5V IC=1A 15 — 150 —
Min. Typ. Max.
Value
DYNAMIC
Symbol Test C ond itions
P
OUT
G
P
η
cf=1.65 GHz PIN= 2.4 W VCE= 28 V 48 — — %
f = 1.65 GHz PIN= 2.4 W VCE= 28 V 20 — — W
f = 1.65 GHz PIN= 2.4 W VCE= 28 V 9.2 — — dB
Value
Min. Typ. Max.
TYPICA L PERFO R MA NCE
Unit
Unit
IMPEDANCE DATA
POWER OUTPUT vs POWER INPUT
2/4
FREQ. ZIN(Ω)Z
CL
(Ω)
1.65 GHz 17.0 + j 18.0 3.5 − j2.0
Page 3
TEST CIRCUIT
SD 1895-03
C1, C2 : 0.4 - 2.5pF #27283 Johanson Trimmer
C3 : 100pF ATC 100A101KCA150 Chip Capacitor
C4 : 15,000pFEMI Filter Murata/Erie #9900-381-6004
L1, L2 : 4 Turns, #28 AWG. .080” I.D.
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Page 4
SD1895-03
PACKAGE MECHANICAL DATA
Ref.: Dwg. No.12-0170
Information furnished is believed to be accurate and reliable.However, SGS-THOMSON Microelectronicsassumes no responsability forthe
consequences of useof such information nor foranyinfringementof patents or other rightsof third parties which may results from its use. No
license isgranted byimplication or otherwiseunder any patentor patentrightsof SGS-THOMSONMicroelectronics. Specificationsmentioned
in this publication aresubject to changewithout notice. This publication supersedes andreplaces all information previously supplied.
SGS-THOMSON Microelectronicsproducts arenot authorizedforuse ascritical componentsinlife supportdevices orsystems withoutexpress
written approvalofSGS-THOMSONMicroelectonics.
1994 SGS-THOMSON Microelectronics- All RightsReserved
Australia - Brazil - France- Germany - HongKong- Italy -Japan- Korea - Malaysia- Malta - Morocco - The Netherlands -
Singapore - Spain - Sweden- Switzerland - Taiwan - Thailand - UnitedKingdom - U.S.A
SGS-THOMSON MicroelectronicsGROUP OF COMPANIES
4/4
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