Page 1
RF & MICROWAVE TRANSISTORS
1.6 GHz SATCOM APPLICAT IONS
.1.65 GHz
.28 VOLTS
.GOLD METALLIZED SYSTEM
.POLYSILICON SI T E BALLASTING
. O VER LAY DIE GEOM ETRY
. HI GH RELIABILITY AND RUGGEDNESS
.P
OUT
5.0 W MIN. WITH 14.0 dB GAIN
=
ORDER CODE
SD1891-03
PIN CONNECTION
SD1891-03
.230 2LF L (M151)
hermetically sealed
BRANDING
1891-03
DESC RIPT ION
The SD1891-03 is a 28 V silicon NPN transistor
designed for INMARSAT and other 1.6 GHz SATCOM applications. This device utilizes polysilicon
site ballasting with a gold metallized die to achieve
high reliability and ruggedness.
ABSOLUTE MAXIMUM RATINGS (T
Symbol Parameter Value Uni t
V
CBO
V
CEO
V
EBO
I
C
P
DISS
T
J
T
STG
THERMA L DA TA
R
TH(j-c)
Collector-Base Voltage 45 V
Collector-Emitter Voltage 15 V
Emitter-Base Voltage 3.5 V
Device Current 1.1 A
Power Dissipation 8.8 W
Junction Temperature +200
Storage Temperature
Junction-Case Thermal Resistance 20.0 °C/W
case
= 25°C)
1. Collector 3. Base
2. Emitter
65 to +200
−
°
C
°
C
March 1993
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Page 2
SD1891-03
ELECTRICAL SPECIFICA TIONS (T
case
= 25°C)
STATIC
Symbol Test Conditions
BV
CBOIC
BV
EBOIE
I
CBO
h
FE
= 1mA IE= 0mA 45 — — V
= 1mA IC= 0mA 3.5 — — V
VCB= 24V IE= 0mA — — 0.5 mA
VCE= 5V IC= 100mA 15 — 150 —
Min. Typ. Max.
Value
DYNAMIC
Symbol Test Conditi ons
P
OUT
G
η
cf=1.65 GHz PIN= 200 mW VCE= 28 V 45 — — %
C
OB
f = 1.65 GHz PIN= 200 mW VCE= 28 V 5.0 — — W
f = 1.65 GHz PIN= 200 mW VCE= 28 V 14 — — dB
P
f = 1 MHz VCB= 28 V — 2.5 — pF
Value
Min. Typ. Max.
Unit
Unit
TYPICA L PERFO R MA NCE
POWER OUTPUT vs POWER INPUT
2/5
Page 3
IMPEDA NCE DATA
Z
CL
1.7 GHz
SD 1891-03
1.5 GHz
Z
IN
1.7 GHz
1.5 GHz
FREQ. ZIN(Ω)ZCL(Ω)
1.5 GHz 6.5 + j 8.5 8.5 + j 18.5
1.6 GHz 6.0 + j 9.5 6.5 + j 18.0
1.7 GHz 6.5 + j 11.5 5.5 + j 15.0
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Page 4
SD1891-03
TEST CIRCUIT
C1, C2 : .4 - 2.5pF Johandson Capacitor #27283
C3 : 100pF ATC Chip Capacitor ATC100 A101KCA 150
C4 : 15,000pF EMI Filter Murata/Erie 9900-381-6004
L1, L2 : 4 Turns, Choke #28 AWG .080” I.D.
S1 : Epsilam 10 Er=10.2, Height .050” 1 Oz. Cu. SMA Launcher CD1
(2 pieces) .230” Fixture Housing Heatsink
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Page 5
PACKAGE MECHANICAL DATA
Ref.: Dwg. No.12-0151
SD 1891-03
Information furnished isbelieved tobe accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No
license is granted by implication or otherwise under any patent or patent rights ofSGS-THOMSONMicroelectronics. Specificationsmentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronicsproductsare notauthorized foruse ascritical componentsinlife supportdevices or systems withoutexpress
written approval of SGS-THOMSON Microelectonics.
1994 SGS-THOMSON Microelectronics- All Rights Reserved
Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands -
Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A
SGS-THOMSON Microelectronics GROUP OF COMPANIES
5/5
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