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.1.65 GHz
.28 VOLTS
.EFFICIENCY 50% MIN.
.CLASS C O PERATIO N
. CO MMON BASE
.INPUT/OUTPUT MATCHING
.P
OUT
24 W MIN. WITH 9.0 dB GAIN
=
SD1888-03
RF & MICROWAVE TRANSISTORS
1.6 GHz SATCOM APPLICAT IONS
.250 x .320 2LF L (M170)
epoxy sealed
ORDER CODE
SD1888-03
PIN CONNECTION
BRANDING
1888-3
DESC RIPTIO N
The SD1888-03 is a 28 V Class C silicon NPN
transistor designed for INMARSAT and other 1.65
GHz SATCOM applications. Agold metallized emitter-ballasted die geometry is employed providing
high gain and efficiency while ensuring long term
reliability and ruggedness under severe operating
conditions. SD1888-03 is packaged in a cost-effective epoxy sealed housing
ABSOLUTE MAXIMUM RATINGS (T
Symbol Parameter Value Uni t
V
V
V
P
T
CBO
CEO
EBO
I
C
DISS
T
J
STG
Collector-Base Voltage 45 V
Collector-Emitter Voltage 12 V
Emitter-Base Voltage 3.0 V
Device Current 2.6 A
Power Dissipation 50 W
Junction Temperature +200
Storage Temperature
case
= 25°C)
1. Collector 3. Base
2. Emitter
65 to +150
−
°
C
°
C
THERMA L DA TA
R
July 1993
TH(j-c)
Junction-Case Thermal Resistance 3.5 °C/W
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SD1888-03
ELECTRICAL SPECIFICA TIONS (T
case
= 25°C)
STATIC
Symbol Test Conditions
BV
CBOIC
BV
CEOIC
BV
EBOIE
h
FE
= 6mA IE=0mA 45 — — V
= 6mA IB=0mA 12 — — V
= 6mA IC=0 mA 3.0 — — V
VCE= 5V IC=1.2 A 15 — 150 —
Min. Typ. Max.
Value
DYNAMIC
Symbol Test C ond itions
P
OUT
G
η
cf=1.65 GHz PIN= 3.0 W VCE= 28 V 50 — — %
f = 1.65 GHz PIN= 3.0 W VCE= 28 V 24 — — W
f = 1.65 GHz PIN= 3.0 W VCE= 28 V 9.0 — — dB
P
Value
Min. Typ. Max.
Unit
Unit
TYPICA L PERFO R MA NCE
POWER OUTPUT & EFFICIENCY vs
POWER INPUT
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Page 3
IMPEDA NCE DATA
TYPICAL I NPUT
IMPEDANCE
Z
IN
TYPICAL COLLECTOR
LOAD IMPEDANCE
SD 1888- 03
FREQ. ZIN(Ω)Z
1600 MHz 9.0 + j 14.0 11.0 + j 2.0
1650 MHz 11.5 + j 12.0 9.0 + j 4.0
1700 MHz 23.0 + j 8.0 8.0 + j 5.5
Z
CL
CL
(Ω)
TEST CIRCUIT
C1 : 1500pF Feedtrhu Capacitor Erie
C2, C3 : 0.4 - 2.5pF Trim Capacitor Johanson Gigatrim
C4 : 100pF ATC Chip Capacitor
L1, L2 : RF Chokes; 3 Turns #22 Wire .100” Diameter
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SD1888-03
PACKAGE MECHANICAL DATA
Ref.: Dwg. No.12-0170
Information furnished is believed to be accurate and reliable.However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement ofpatents or other rights of third partieswhich may results from its use. No
license isgranted byimplication orotherwise under any patentor patentrights ofSGS-THOMSON Microelectronics. Specificationsmentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronicsproductsare notauthorizedforuse ascritical componentsin lifesupport devices orsystemswithout express
written approvalof SGS-THOMSON Microelectonics.
1994 SGS-THOMSON Microelectronics- All Rights Reserved
Australia - Brazil - France- Germany - HongKong - Italy - Japan - Korea - Malaysia- Malta - Morocco - The Netherlands -
Singapore - Spain - Sweden- Switzerland - Taiwan - Thailand - UnitedKingdom - U.S.A
SGS-THOMSON Microelectronics GROUP OF COMPANIES
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