Page 1
固电半导体
INCHANGE SEMICONDUTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD1887
DESCRIPTION
·With TO-3PML package
·High breakdown voltage
·High reliability
·High speed
APPLICATIONS
·Color TV horizontal deflection output.
·Color display horizontal deflection output.
PINNING
PIN DESCRIPTION
1
2 Collector
3 Emitter
Base
Fig.1 simplified outline (TO-3PML) and symbol
Absolute maximum ratings(Ta=25
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
CBO
V
CEO
V
EBO
IC Collector current 10 A
ICM Collector current-peak 30 A
PC Collector power dissipation
Collector-base voltage Open emitter 1500 V
Collector-emitter voltage Open base 800 V
Emitter-base voltage Open collector 6 V
℃)
T
=25℃
C
70 W
Tj Junction temperature 150
T
Storage temperature -55~150
stg
℃
℃
Page 2
固电半导体
INCHANGE SEMICONDUTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD1887
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
Collector-emitter saturation voltage IC=8A;IB=1.6 A 5 V
CEsat
V
Base-emitter saturation voltage IC=8A;IB=1.6 A 1.5 V
BEsat
V
Collector-emitter sustaining voltage IC=100mA;IB=0 800 V
CEO(SUS)
I
Emitter cut-off current VEB=4V; IC=0 1 mA
EBO
I
Collector cut-off current VCB=800V; IE=0 10
CBO
I
Collector cut-off current VCE=1500V; RBE=0 1 mA
CES
h
DC current gain IC=1 A ; VCE=5V 8
FE-1
h
DC current gain IC=8A ; VCE=5V 5 10
FE-2
tf Fall time
IC=6A;RL=33.3Ω; IB1=1.2A
=-2.4AVCC=200V
I
B2
0.1 0.3
μA
μs
2
Page 3
固电半导体
INCHANGE SEMICONDUTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD1887
PACKAGE OUTLINE
3
Fig.2 Outline dimensions
Page 4
固电半导体
INCHANGE SEMICONDUTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD1887
4
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