Page 1
固电半导体
INCHANGE SEMICONDUTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD1878
DESCRIPTION
·With TO-3PML package
·High speed
·High breakdown voltage
·High reliability
·Built in damper diode
APPLICATIONS
·Color TV horizontal deflection output
·Color display horizontal deflection output.
PINNING
PIN DESCRIPTION
1
2 Collector
3 Emitter
Base
Fig.1 simplified outline (TO-3PML) and symbol
Absolute maximum ratings(Ta=
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
CBO
V
CEO
V
EBO
IC Collector current 5 A
ICM Collector current-peak 20 A
PC Collector power dissipation
Tj Junction temperature 150
Collector-base voltage Open emitter 1500 V
Collector-emitter voltage Open base 800 V
Emitter-base voltage Open collector 6 V
℃)
T
=25℃
C
60 W
℃
T
Storage temperature -55~150
stg
℃
Page 2
固电半导体
INCHANGE SEMICONDUTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD1878
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
CEO(SUS)
V
CEsat
V
BEsat
I
CBO
I
EBO
I
CES
h
FE-1
h
FE-2
VF Diode forward voltage IEC=5A ; 2 V
tf Fall time
Collector-emitter sustaining voltage IC=100mA ;IB=0 800 V
Collector-emitter saturation voltage IC=4A ;IB=0.8A 5.0 V
Base-emitter saturation voltage IC=4A ;IB=0.8A 1.5 V
Collector cut-off current VCB=800V ;IE=0 10
Emitter cut-off current VEB=4V;IC=0 40 130 mA
Collector cut-off current VCE=1500V 1.0 mA
DC current gain IC=1A ; VCE=5V 8
DC current gain IC=4A ; VCE=5V 5 10
IC=4A;RL=66.7Ω;VCC=200V
=0.8A; IB2=-1.6A
I
B1
0.1 0.3
μA
μs
2
Page 3
固电半导体
INCHANGE SEMICONDUTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD1878
PACKAGE OUTLINE
Fig.2 Outline dimensions
3
Page 4
固电半导体
INCHANGE SEMICONDUTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD1878
4
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