Page 1
RF & MICROWAVE TRANSISTORS
.915 - 960 MHz
.24 VOLTS
.CLASS AB PU SH PULL
. INTERNAL INPUT MATCHING
.D ESIGNED FOR HIGH POWER LINEAR
OPERATION
.HIGH SATURATED POWER CAPABILITY
.G OLD METALLIZATION FOR HIGH
RELIABILITY
.DIFFUSED EMITTER BALLAST
RESISTORS
. CO MMON EMITTER CONFIGURATION
.P
OUT
100 W MIN. WITH 7.0 dB GAIN
=
SD1680
800/900 MHz APPLICA TIONS
2 x .437 x .450 2L FL (M175)
epoxysealed
ORDER CODE
SD1680
PIN CONNECTION
BRANDING
SD1680
DESC RIPTION
The SD1680 is a gold metallized epitaxial silicon
NPN planar transistor using diffused emitter ballast
resistors for high linearity Class AB operation in
cellular base station applications.
ABSOLUTE MAXIMUM RATINGS (T
Symbol Parameter Value Uni t
V
CBO
V
CEO
V
EBO
I
C
P
DISS
T
J
T
STG
THERMA L DATA
R
TH(j-c)
Collector-Base Voltage 60 V
Collector-Emitter Voltage 30 V
Emitter-Base Voltage 3.0 V
Device Current 25 A
Power Dissipation 310 W
Junction Temperature +200
Storage Temperature
Junction-Case Thermal Resistance 0.55 °C/W
case
= 25°C)
1. Collector 3. Emitter
2. Base
55 to +150
−
°
C
°
C
November 1992
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Page 2
SD1680
ELECTRICAL SPECIFICATIO NS (T
case
= 25°C)
STATIC
Symbol Test Conditions
BV
CBO
BV
CEO
BV
EBO
I
CES
h
FE
TestedPer Side
IC= 100mA IE= 0mA 60 — — V
IC= 100mA IB= 0mA 30 — — V
IE= 50mA IC= 0mA 3.0 — — V
VCE= 28V IE= 0mA — — 10 mA
VCE= 5V IC= 3A 15 — 70 —
Min. Typ. Max.
Value
DYNAMIC
Symbol Test Cond iti ons
P
*f=900 MHz VCE= 24 V ICQ= 2 x 300 mA 120 — — W
OUT
Value
Min. Typ. Max.
GP*f=900 MHz VCE= 24 V ICQ= 2 x 300 mA 7.0 — — dB
IMD** f = 900 MHz VCE= 24 V ICQ= 2x300mA — −32 — dBc
η
cf=900 MHz VCE= 24 V ICQ= 2x300mA 45 — — %
C
OB
Note: * @ 1 dB Compression
f = 1 MHz VCB= 28 V — — 100 pF
** P
100W PEP,∆F=400KH z (2 t ones)
=
OUT
Unit
Unit
TYPICA L PERFOR MA NCE
POWER OUTPUT vs POWER IN PU T
THERMAL RESISTANCE vs CASE
TEMPERATURE
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Page 3
TYPICA L PERFOR MA NCE ( co nt’ d)
SD1680
COLLECTOR EFFICIENCY vs FREQUENCY
INTERMODULATION DISTORTION vs
POWER OUTPUT
BROADBAND POWER GAIN vs
FREQUENCY
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Page 4
SD1680
IMPEDA NC E DATA
FREQ. ZIN(Ω)* ZCL(Ω)**
910 MHz 4.8 + j 0.95 5.0 + j 0.9
930 MHz 4.5 + j 0.0 4.6 + j 1.7
950 MHz 4.3 − j 1.0 4.2 + j 2.6
970 MHz 4.1 − j 1.9 3.8 + j 3.4
* Base to Base
** Collector to Collector
P
= 100W
OUT
VCC= 24V
Normalized to 50 Ohms
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Page 5
TEST CIRCUIT
SD1680
B1, B2 : Coaxial Cable 25, 43mm
C1, C2 : 330pF, ATC 100B
C3 : .8 - 8.0pF Johanson Gigatrim
C4 : 2 x 3.6pF +1.6pF ATC 100B
C5 : 3.3pF ATC 100B + .8 - 8.0pF
C6, C7 : 330pF, ATC 100B
C8 : 120pF ATC 100B
C9 : 1.5nF, ATC 100B
C10 : 10nF + 47µF, 63V
C11 : 1.5nF, ATC 100B + 10nF
C12 : 470pF + 1.5nF, ATC 100B + 100mF, 63V
C13 : .4 - 4pF Johanson Gigatrim
Substrate: Teflon Glass, Er = 2.55, 30Mils Thick
Johanson Gigatrim
L1, L18 : Printed Line 50
L2, L17 : Printed Line 26.7Ω10mm
L3, L16 : Printed Line 60Ω10.5mm
L4, L15 : Printed Line 50Ω43mm
L5 : Printed Line 25Ω13.5mm
L6 : Printed Line 21Ω15mm
L7 : Printed Line 10.5Ω 12.5mm
L8 : Printed Line 8Ω7.5mm
L9, L10 : Printed Line 50Ω10mm
L11 : Printed Line 9.5Ω10.5mm
L12 : Printed Line 11Ω14.5mm
L13 : Printed Line 15.5Ω8.5mm
L14 : Printed Line 19Ω3.5mm
L19 : 2 Turns, #16 AWG
L20 : 2 Turns, #16 AWG
L21, L22 : 12 Turns, #22 AWG
Ω
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Page 6
SD1680
BIAS VOLTAGE SOURCE
C15 : 10nF + 100nF+ 10µF
C16 : 10nF
C17 : 1µF
C18 : 1.2nF + 27nF + 10µF
D1 : AAY 49, Ge Diode Thermally Connected withQ3 Heatsink
D2 : 1N 4005, SIDiode Thermally Connectedwith Q3Heatsink
D3 : 1N 4005, SIDiode Thermally Connectedwith RF Transistors Flange
L8, L9 : FerriteChoke
Q3 : BDX 63B
R7 : 470Ω, 1/2W
R8 : 100Ω, Trimpot
6/7
Page 7
PACKAGE MECHANICAL DATA
Ref.: Dwg. No.12-0175
SD1680
Information furnished is believed to be accurateand reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information norfor any infringement of patents or other rights of third partieswhich may results from its use. No
license isgrantedby implication or otherwise underany patent orpatent rightsof SGS-THOMSON Microelectronics.Specificationsmentioned
in this publicationare subjectto change without notice. This publication supersedes andreplaces all informationpreviously supplied.
SGS-THOMSON Microelectronicsproductsare notauthorizedforuse ascritical componentsin lifesupportdevices or systemswithoutexpress
written approvalof SGS-THOMSON Microelectonics.
1994 SGS-THOMSON Microelectronics - All Rights Reserved
Australia - Brazil - France - Germany - Hong Kong - Italy -Japan - Korea -Malaysia - Malta - Morocco -The Netherlands -
Singapore -Spain - Sweden- Switzerland -Taiwan - Thailand- United Kingdom - U.S.A
SGS-THOMSON Microelectronics GROUPOF COMPANIES
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