Page 1
固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD1577
DESCRIPTION ·
·With TO-3PFa package
·Wide area of safe operation
·High voltage,high speed
APPLICATIONS
·Horizontal deflection output applications
PINNING
PIN DESCRIPTION
1
2 Collector
3 Emitter
Base
Absolute maximum ratings(Ta=25
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
CBO
V
CEO
V
EBO
IC Collector current 5 A
ICM Collector current-peak 17 A
IB Base current 3.5 A
Collector-base voltage Open emitter 1500 V
Collector-emitter voltage Open base 700 V
Emitter-base voltage Open collector 6 V
℃)
T
PC Collector power dissipation
Tj Junction temperature 150
T
Storage temperature -55~150
stg
=25℃
C
100 W
℃
℃
Page 2
固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD1577
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
Collector-emitter saturation voltage IC=4.5A ;IB=2A 2.0 V
CEsat
V
Base-emitter saturation voltage IC=4.5A ;IB=2A 1.3 V
BEsat
V
Switching times
Emitter-base breakdown voltage IE=1mA ;IC=0 6 V
(BR)EBO
I
Collector cut-off current
CBO
I
Emitter cut-off current VEB=5V; IC=0 50 μA
EBO
h
DC current gain IC=2A ; VCE=10V 4 15
FE
t
Storage time 11 μs
stg
tf Fall time
VCB=750V; IE=0 50 μA
=1500V; IE=0 1 mA
V
CB
=4A; LB=10μH
I
C
I
=1.5A
B
end
1 μs
2
Page 3
固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD1577
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance:±0.30mm)
3
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