Page 1
固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD1546
DESCRIPTION ·
·With TO-3P(H)IS package
·High voltage ,high speed
·Low collector saturation voltage
APPLICATIONS
·Color TV horizontal output applications
·Switching regulator output applications
PINNING
PIN DESCRIPTION
1
2 Collector
3 Emitter
Absolute maximum ratings (Ta=25
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
CBO
V
CEO
V
EBO
IC Collector current 6 A
IB Base current 3 A
PC Collector power dissipation TC=25℃ 50 W
Base
Fig.1 simplified outline (TO-3P(H)IS) and symbol
℃)
Collector-base voltage Open emitter 1500 V
Collector-emitter voltage Open base 600 V
Emitter-base voltage Open collector 5 V
Tj
T
stg
Junction temperature 150 ℃
Storage temperature -55~150 ℃
Page 2
固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD1546
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
Collector-emitter saturation voltage IC=5A ;IB=1A 3.0 5.0 V
CEsat
V
Base-emitter saturation voltage IC=5A ;IB=1A 1.5 V
BEsat
I
Collector cut-off current VCB=500V; IE=0 10 μA
CBO
I
Emitter cut-off current VEB=5V; IC=0 1 mA
EBO
h
DC current gain IC=1A ; VCE=5V 8 20
FE
fT Transition frequency IC=0.1A ; VCE=10V 3 MHz
COB Collector output capacitance IE=0 ; VCB=10V;f=1MHz 165 pF
tf
Fall time
ICP=5A ;I
B1
(end)
=1A
0.5 1.0 μs
2
Page 3
固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD1546
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm)
3
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