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RF & MICROWAVE TRANSISTORS
.DESIGNED FOR HIGH POWER PU LSED
IFF, DME, TACAN APPLICATIONS
.350 WATTS (typ.) IFF 1030 - 1090 MHz
.300 W ATTS (min.) DME 1025 - 1150 MHz
. 2900 WATTS (typ.) TACAN 960 - 1215 MHz
.6.3 dB MIN. GAIN
.REFRACTORY GOLD METALLIZATION
.EMITT ER BALLASTING AND LOW
THERMAL RESISTANCE FOR
RELIABILITY AND RUGGEDNESS
.30:1 LOAD VSWR CAPABILITY AT
SPECIFIED O PERATIN G COND ITIONS
. I NPUT/OUTPUT MATCHED, COMMON
BASE CONFIGURATI ON
SD1540
AVIONI CS APPLICA TIONS
.400 SQ. 2LF L (M103)
epoxy sealed
ORDER CODE
SD1540
PIN CONNECTION
BRANDING
SD1540
DESC RIPTION
The SD1540 is a gold metallized silicon, NPN
power transistordesignedfor applications requiring
high peak power and low duty cycles such as
IFF, DME and TACAN. The SD1540 is packaged
in a metal/ceramic package with internal input/output matching resulting in improved broadband performance and a low thermal resistance.
ABSOLUTE MAXIMUM RATINGS (T
Symbol Parameter Value Uni t
V
CBO
V
CES
V
EBO
I
C
P
DISS
T
J
T
STG
THERMA L DATA
R
TH(j-c)
Collector-Base Voltage 65 V
Collector-Emitter Voltage 65 V
Emitter-Base Voltage 3.5 V
Device Current 22 A
Power Dissipation 875 W
Junction Temperature +200
Storage Temperature
Junction-Case Thermal Resistance 0.20 °C/W
case
= 25°C)
1. Collector 3. Emitter
2. Base 4. Base
65 to +150
−
°
C
°
C
November 1992
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SD1540
ELECTRICAL SPECIFICATIONS (T
case
= 25°C)
STATIC
Symbol Test Conditions
BV
BV
I
CES
CBO
EBO
IC= 10m A IE= 0mA 65 — — V
IE= 5mA IC= 0mA 3.5 — — V
VCE= 50V IE= 0mA — — 25 mA
DYNAMIC
Symbol Test C ond itions
P
OUT
G
P
Note: Pulse Width=10µSec, Duty Cycle=1%
f = 1025 — 1150MHz PIN= 70 W VCE= 50 V 300 — — W
f = 1025 — 1150MHz PIN= 70 W VCE= 50 V 6.3 — — dB
This device is suitabl e for use under other pulse w idt h/duty cycle c onditions.
Please contact the f actory f or specifi c a ppli c ati ons asi stance .
TYPICA L P ERFO R MA NCE
Value
Min. Typ. Max.
Value
Min. Typ. Max.
Unit
Unit
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IMPEDA NCE D ATA
SD1540
3/5
Page 4
SD1540
TEST CIRCUIT
4/5
All Dimension are in Inches
C1 : 100pF Chip Capacitor Across .120 Sq. Gap
C2 : .6 - 4.5pF JOHANSON
C3 : 470pF Chip Capacitor Across .120 Sq. Gap
C4, C5 : .35 - 3.5pF
L1 : 2 3/4 Turns Diameter 16 Tinned .125 I.D.
L2 : 2 3/4 Turns Diameter 20 Tinned .090 I.D.
.215 Long
.220 Long
Z1 : .395 x .083
Z2 : .250 x .340
Z3 : .495 x .083
Z4 : .360 x 1.193
Z5 : .485 x 1.2
Z6 : .520 x .035
Z7 : .270 x .330
Z8 : .270 x .110
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PACKAGE MECHANICAL DATA
Ref.: Dwg. No.12-0103
SD1540
Information furnished is believed to be accurate and reliable.However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of useof such information nor forany infringement of patents orother rights of third parties which may results from its use. No
license isgranted byimplication or otherwiseunder any patentor patentrights ofSGS-THOMSON Microelectronics. Specificationsmentioned
in this publication aresubject to changewithout notice. Thispublication supersedes and replaces all informationpreviously supplied.
SGS-THOMSON Microelectronicsproducts arenot authorizedforuse ascritical componentsin life supportdevicesorsystemswithout express
written approvalof SGS-THOMSON Microelectonics.
1994 SGS-THOMSON Microelectronics- All RightsReserved
Australia - Brazil - France- Germany - Hong Kong - Italy-Japan - Korea - Malaysia - Malta - Morocco - The Netherlands-
Singapore - Spain - Sweden- Switzerland - Taiwan - Thailand - UnitedKingdom - U.S.A
SGS-THOMSON MicroelectronicsGROUP OF COMPANIES
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