Page 1
RF & MICROWAVE TRANSISTORS
.DESIGNED FOR HIGH POWER PU LSED
IFF, DME, TACAN APPLICATIONS
.200 WATTS (typ.) IFF 1030 - 1090 MHz
.150 W ATTS (min.) DME 1025 - 1150 MHz
. 140 WATTS (typ.) TACAN 960 - 1215 MHz
.7.8 dB MIN. GAIN
.REFRACTORY GOLD METALLIZATION
.EMITT ER BALLASTING AND LOW
THERMAL RESISTANCE FOR
RELIABILITY AND RUGGEDNESS
.30:1 LOAD VSWR CAPABILITY AT
SPECIFIED O PERATIN G COND ITIONS
. I NPUT/OUTPUT MATCHED, COMMON
BASE CONFIGURATI ON
SD1538-02
AVIONI CS APPLICA TIONS
.400 SQ. 2LF L (M103)
epoxy sealed
ORDER CODE
SD1538-02
PIN CONNECTION
BRANDING
SD1538-2
DESC RIPTION
The SD1538-02 is a gold metallized silicon, NPN
power transistordesignedfor applications requiring
high peak power and low duty cycles such as
IFF, DME and TACAN. The SD1538-02 is packaged in a metal/ceramic package with internal
input/output matching resulting inimproved broadband performance and a low thermal resistance.
ABSOLUTE MAXIMUM RATINGS (T
Symbol Parameter Value Uni t
V
CBO
V
CES
V
EBO
I
C
P
DISS
T
J
T
STG
THERMA L DATA
R
TH(j-c)
Collector-Base Voltage 65 V
Collector-Emitter Voltage 65 V
Emitter-Base Voltage 3.5 V
Device Current 11.0 A
Power Dissipation 583 W
Junction Temperature +200
Storage Temperature
Junction-Case Thermal Resistance 0.30 °C/W
case
= 25°C)
1. Collector 3. Emitter
2. Base 4. Base
65 to +150
−
°
C
°
C
November 1992
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Page 2
SD1538-02
ELEC T RICA L SPECIFICATIONS (T
case
= 25°C)
STATIC
Symbol Test Conditions
BV
BV
BV
I
CES
h
CBO
CES
EBO
FE
IC= 10mA IE= 0mA 65 — — V
IC= 25mA VBE= 0V 65 — — V
IE= 5mA IC= 0mA 3.5 — — V
VCE= 50V IE= 0mA — — 10 mA
VCE= 5V IC= 300mA 5 — — —
DYNAMIC
Symbol Test C ond itions
P
OUT
G
P
Note: Pulse Width=10µSec, Duty Cycle=1%
f = 1025 — 1150MHz PIN= 25.0 W VCE= 50 V 150 — — W
f = 1025 — 1150MHz PIN= 25.0 W VCE= 50 V 7.8 — — dB
This device is suitabl e for use under othe r pulse wi dth/du t y cycle conditi ons.
Please c ontact t he factory for s pecif ic appl ications assistance.
Value
Min. Typ. Max.
Value
Min. Typ. Max.
Unit
Unit
TYPICA L P ERFO R MA NCE
POWER OUTPUT vs POWER INPUT
POWER O UTPUT vs FREQUENCY
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Page 3
TYPICAL PERFO RMAN CE (cont’d )
SD 1538-02
EFFICIENCY vs POWER INPUT
IMPEDA NCE D ATA
EFFICIENCY vs FREQUENCY
TYPICAL INPUT IMPEDANCE
TYPICAL COLLECTOR LOAD
IMPEDANCE
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SD1538-02
TEST CIR C UIT AND PC BO ARD LA YOU T
C1, C2 : .6 - 4.5pF Gigatrim
C3 : .100 x .100 120pF Chip Capacitor
C4 : .100 x .100 470pF Chip Capacitor
C5 : 100mF Electrolytic
L1 : #20 AWG
L2 : 3 Turns, #20 AWG Wound on #32 Drill Bit
Z1 : .195 x .415
Z2 : .685 x .230
Z3 : .080 x .105
Z4 : .845 x .345
Z5 : .640 x .470
Z6 : .070 x .405
Z7 : .740 x .180
Z8 : .50 x .325
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Page 5
PACKAGE MECHANICAL DATA
Ref.: Dwg. No.12-0103
SD 1538-02
Information furnished is believed to be accurate and reliable.However, SGS-THOMSON Microelectronics assumes no responsability forthe
consequences of useof such information nor forany infringement of patents orother rights of third parties which may results from its use. No
license isgranted byimplication or otherwiseunder any patentor patentrights ofSGS-THOMSON Microelectronics. Specificationsmentioned
in this publication aresubject to changewithout notice. This publication supersedes andreplaces all information previously supplied.
SGS-THOMSON Microelectronicsproducts arenot authorizedforuse ascritical componentsin life supportdevicesorsystemswithout express
written approvalof SGS-THOMSON Microelectonics.
1994 SGS-THOMSON Microelectronics- All RightsReserved
Australia - Brazil - France- Germany - Hong Kong - Italy- Japan - Korea - Malaysia - Malta - Morocco - The Netherlands-
Singapore - Spain - Sweden- Switzerland - Taiwan - Thailand - UnitedKingdom - U.S.A
SGS-THOMSON MicroelectronicsGROUP OF COMPANIES
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