Page 1
RF & MICROWAVE TRANSISTORS
.DESIGNED FOR HIGH POWER PULSED
IFF, DME, TACAN APPLICATIONS
.80 WATTS (typ.) IF F 1030 - 1090 MHz
. 7 5 WATTS (min.) DME 1025 - 1150 MHz
. 5 0 WATTS (ty p.) TACAN 960 - 1215 MH z
. 8.0 dB MIN. GAIN
.REFRACTORY GOLD METALLIZATION
.EMITTER BALLASTING AND LOW
THERMAL RESISTANCE FOR
RELIABILITY AND RUGGEDNESS
.INFIN ITE LOAD VSWR C APABILITY AT
SPECIFIED O PERATIN G COND ITIONS
. INPUT M ATCH ED , CO M MON BASE
CONFIGURATION
SD1534-08
AVIONI CS APPLICA TIONS
.250 SQ. 2LF L (M105)
hermetically sealed
ORDER CODE
SD1534-08
PIN CONNECTION
BRANDING
1534-8
DESC RIPTION
The SD1534-08 is a gold metallized silicon, NPN
power transistordesigned for applications requiring
high peak power and low duty cycles such as
IFF, DME and TACAN. The SD1534-08 is packaged in the .280” input matched hermetic stripline
flange package resulting in improved broadband
performance and a low thermal resistance.
ABSOLUTE MAXIMUM RATINGS (T
Symbol Parameter Value Uni t
V
CBO
V
CES
V
EBO
I
C
P
DISS
T
J
T
STG
THERMA L DATA
R
TH(j-c)
Collector-Base Voltage 65 V
Collector-Emitter Voltage 65 V
Emitter-Base Voltage 3.5 V
Device Current 5.5 A
Power Dissipation 218.7 W
Junction Temperature +200
Storage Temperature
Junction-Case Thermal Resistance 0.8 °C/W
case
= 25°C)
1. Collector 3. Emitter
2. Base
65 to +150
−
°
C
°
C
November 1992
1/3
Page 2
SD1534-08
ELECTRICAL SPECIFICATIONS (T
case
= 25°C)
STATIC
Symbol Test Conditions
BV
CBOIC
BV
CESIC
BV
EBOIE
I
CES
h
FE
= 10mA IE= 0mA 65 — — V
= 25mA VBE= 0V 65 — — V
= 10mA IC= 0mA 3.5 — — V
VCE= 50V IE= 0mA — — 5 mA
VCE= 5V IC= 100mA 10 — 200 —
DYNAMIC
Symbol Test Cond iti ons
P
OUT
G
Note: Pulse Width=10µSec, Duty Cycle=1%
f = 1025 — 1150MHz PIN= 13.5 W VCE= 50 V 75 — — W
f = 1025 — 1150MHz PIN= 13.5 W VCE= 50 V 7.5 — — dB
P
This device is sui table f or use under other pulse widt h/duty cycle conditions .
Please contact the factory for specific applications assistance .
Value
Min. Typ. Max.
Value
Min. Typ. Max.
Unit
Unit
2/3
Page 3
PACKAGE MECHANICAL DATA
Ref.: Dwg. No.12-0105
SD 1534-08
Information furnished isbelieved to be accurate and reliable.However, SGS-THOMSON Microelectronicsassumes no responsability for the
consequences ofuse of such informationnor forany infringement ofpatents or other rightsof third parties whichmay results from itsuse. No
license isgranted byimplication orotherwise underany patentor patentrights ofSGS-THOMSON Microelectronics.Specificationsmentioned
in this publicationare subject to changewithout notice. Thispublication supersedes andreplaces all informationpreviously supplied.
SGS-THOMSON Microelectronicsproductsare notauthorized foruse ascritical componentsin lifesupportdevicesorsystems withoutexpress
written approvalof SGS-THOMSON Microelectonics.
1994 SGS-THOMSON Microelectronics- All RightsReserved
Australia - Brazil- France - Germany-Hong Kong - Italy- Japan - Korea -Malaysia - Malta -Morocco - The Netherlands-
Singapore -Spain - Sweden - Switzerland- Taiwan -Thailand - UnitedKingdom - U.S.A
SGS-THOMSON MicroelectronicsGROUP OFCOMPANIES
3/3
Loading...